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Joule-Class 940 nm Diode Laser Bars for Millisecond Pulse Applications
/forschung/publikationen/joule-class-940-nm-diode-laser-bars-for-millisecond-pulse-applications
Diode laser bars with optimized epitaxial designs, long resonators and passivated facets deliver joule-class millisecond pulses (kilowatts of peak power) with the properties needed by advanced…
Spatial inhomogeneities in AlxGa1-xN quantum wells induced by the surface morphology of AlN/sapphire templates
/forschung/publikationen/spatial-inhomogeneities-in-alxga1-xn-quantum-wells-induced-by-the-surface-morphology-of-alnsapphire-templates
The effects of the template on the optical and structural properties of Al0.75Ga0.25N/Al0.8Ga0.2N multiple quantum well (MQWs) laser active regions have been investigated. The laser structures for…
V-pit to truncated pyramid transition in AlGaN-based heterostructures
/forschung/publikationen/v-pit-to-truncated-pyramid-transition-in-algan-based-heterostructures
The formation of three-dimensional truncated pyramids after the deposition of AlN/GaN superlattices onto (0001) AlN/sapphire templates has been analysed by atomic force microscopy as well as…
Compact Handheld Probe for Shifted Excitation Raman Difference Spectroscopy with Implemented Dual-Wavelength Diode Laser at 785 Nanometers
/forschung/publikationen/compact-handheld-probe-for-shifted-excitation-raman-difference-spectroscopy-with-implemented-dual-wavelength-diode-laser-at-785nbspnanometers
A compact handheld probe for shifted-excitation Raman difference spectroscopy (SERDS) with an implemented dual-wavelength diode laser with an emission at 785 nm is presented. The probe is milled…
Investigation of the Dynamic On-State Resistance of 600V Normally-off and Normally-on GaN HEMTs
/forschung/publikationen/investigation-of-the-dynamic-on-state-resistance-of-600v-normally-off-and-normally-on-gan-hemts
In this paper, current collapse phenomena and thermal effects in newly developed normally-off and normally-on GaN HEMTs are investigated. The experimental results show that a high off-state voltage…
Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors
/forschung/publikationen/investigation-of-gate-diode-degradation-in-normally-off-p-ganalgangan-high-electron-mobility-transistors
Gate diode conduction mechanisms were analyzed in normally-off p-GaN/AlGaN/GaN high-electron mobility transistors grown on Si wafers before and after forward bias stresses. Electrical…
Experimental Analysis and Modeling of GaN Normally-off HFETs with Trapping Effects
/forschung/publikationen/experimental-analysis-and-modeling-of-gan-normally-off-hfets-with-trapping-effects
A 70 mΩ / 600 V normally-off AlGaN/GaN HFET is analyzed and modeled. In particular, static and dynamic characteristics are investigated with the focus on modeling trapping effects…
High power picosecond and nanosecond diode laser sources in the wavelength range 650 nm to 1100 nm
/forschung/publikationen/high-power-picosecond-and-nanosecond-diode-laser-sources-in-the-wavelength-range-650nbspnm-to-1100nbspnm
Optical pulses in the nanosecond and picosecond rangescan be generated by gain switching, Q-switching and mode-locking of diode lasers, either as stand-alone devices or in MOPA systemscombining…
Passive coherent combining of two tapered laser diodes in an interferometric external cavity
/forschung/publikationen/passive-coherent-combining-of-two-tapered-laser-diodes-in-an-interferometric-external-cavity
We demonstrate a rear-side phase-locking architecture with two high-brightness diode lasers. This technique is based on the passive phase-locking of emitters in an external cavity on their rear…
Study of lateral brightness in 20 µm to 50 µm wide narrow stripe broad area lasers
/forschung/publikationen/study-of-lateral-brightness-in-20nbspum-to-50nbspum-wide-narrow-stripe-broad-area-lasers
We present a design study of high power narrow stripe broad area diode lasers at 9xx-nm with contact stripe widths of 20 µm, 30 µm an 50 µm. The devices are deeply implanted with…