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Iridium Plug Technology for AlGaN/GaN HEMT Short-Gate Fabrication
/forschung/publikationen/iridium-plug-technology-for-algangan-hemt-short-gate-fabrication
The purpose of this work is to introduce a novel concept for the AlGaN/GaN HEMT embedded gate fabrication. The novelty of the proposed gate fabrication method is to obtain a stress relief volume…
DFB lasers with apodized surface gratings for wavelength stabilization and high efficiency
/forschung/publikationen/dfb-lasers-with-apodized-surface-gratings-for-wavelength-stabilization-and-high-efficiency
We present results of GaAs-based distributed-feedback (DFB) broad-area (BA) lasers with integrated surface-etched gratings. Lasers with longitudinally varying (apodized) Bragg gratings are compared…
Direct Modulation Capabilities of Micro-Integrated Laser Sources in the Yellow-Green Spectral Range
/forschung/publikationen/direct-modulation-capabilities-of-micro-integrated-laser-sources-in-the-yellow-green-spectral-range
In this letter, the millisecond modulation capabilities of high power multisection diode laser systems and their application to second harmonic generation (SHG) are investigated. Different modulation…
JOKARUS - design of a compact optical iodine frequency reference for a sounding rocket mission
/forschung/publikationen/jokarus-design-of-a-compact-optical-iodine-frequency-reference-for-a-sounding-rocket-mission
We present the design of a compact absolute optical frequency reference for space applications based on hyperfine transitions in molecular iodine with a targeted fractional frequency instability of…
100-MHz GaN-HEMT Class-G Supply Modulator for High-Power Envelope-Tracking Applications
/forschung/publikationen/100-mhz-gan-hemt-class-g-supply-modulator-for-high-power-envelope-tracking-applications
In this paper, a highly efficient class-G supply modulator targeting high-power wideband envelope tracking applications is presented. The maximum output power using a 50% duty cycle at 100-MHz…
Realisation of a widely tuneable sampled grating DBR laser emitting around 970 nm
/forschung/publikationen/realisation-of-a-widely-tuneable-sampled-grating-dbr-laser-emitting-around-970-nm
Design and fabrication of a monolithic, single aperture widely tuneable diode laser emitting around 970 nm is presented. Overgrown sampled grating Bragg reflectors are applied to setup…
Design considerations for AlGaN-based UV LEDs emitting near 235 nm with uniform emission pattern
/forschung/publikationen/design-considerations-for-algan-based-uv-leds-emitting-near-235nbspnm-with-uniform-emission-pattern
The uniformity of emission from deep ultraviolet light emitting diodes (UV LEDs) is investigated. The AlGaN-based heterostructures of the UV LEDs emitting around 235 nm were grown by…
High-power broad-area buried-mesa lasers
/forschung/publikationen/high-power-broad-area-buried-mesa-lasers
Broad area lasers emitting near 940 nm are fabricated using a process based on two-step epitaxy. The n-side of the layer structure and the active layer are grown during the first epitaxial step, the…
Design and Realization of a Miniaturized DFB Diode Laser-Based SHG Light Source With a 2-nm Tunable Emission at 488 nm
/forschung/publikationen/design-and-realization-of-a-miniaturized-dfb-diode-laser-based-shg-light-source-with-a-2-nm-tunable-emission-at-488-nm
We present a concept and the realization of a diode laser-based second harmonic generation (SHG) light source at 488 nm with the capability of a spectral tuning over 2 nm (83 cm-1) and…
Performance study of a 248 GHz voltage controlled hetero-integrated source in InP-on-BiCMOS technology
/forschung/publikationen/performance-study-of-a-248-ghz-voltage-controlled-hetero-integrated-source-in-inp-on-bicmos-technology
This paper presents the performance study of a 248 GHz voltage-controlled hetero-integrated signal source using InP-on-BiCMOS technology. The source consists of a Voltage Controlled Oscillator…