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Benzocyclobutene dry etch with minimized byproduct redeposition for application in an InP DHBT process
/forschung/publikationen/benzocyclobutene-dry-etch-with-minimized-byproduct-redeposition-for-application-in-an-inp-dhbt-process
In this article we report on the reduction of redeposition during inductively coupled plasma (ICP) etching of benzocyclobutene (BCB) with a soft mask in a sulfur hexafluoride/oxygen (SF6/O2) plasma.…
Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN
/forschung/publikationen/correlation-of-sapphire-off-cut-and-reduction-of-defect-density-in-movpe-grown-aln
X-ray diffraction and TEM investigations of MOVPE grown AlN on sapphire with small off-cuts to a- and m-plane reveal the influence of the off-cut direction and angle on the reduction of threading…
Freely Triggerable Picosecond Pulses From a DBR Ridge Waveguide Diode Laser Near 1120 nm
/forschung/publikationen/freely-triggerable-picosecond-pulses-from-a-dbr-ridge-waveguide-diode-laser-near-1120-nm
In this letter, we present results on the pulsed operation of a distributed Bragg reflector ridge waveguide diode laser with wavelength close to 1120 nm. Picosecond optical pulses were generated…
0.25-µm GaN TeraFETs Optimized as THz Power Detectors and Intensity-Gradient Sensors
/forschung/publikationen/025-um-gan-terafets-optimized-as-thz-power-detectors-and-intensity-gradient-sensors
This letter reports on the influence of illumination conditions on the detector response of three-terminal devices. Antenna-coupled field-effect transistors for the plasmonic detection of THz…
Terahertz wave generation from dual wavelength monolithic integrated Distributed Bragg Reflector semiconductor laser diode
/forschung/publikationen/terahertz-wave-generation-from-dual-wavelength-monolithic-integrated-distributed-bragg-reflector-semiconductor-laser-diode
THz wave generation from a dual wavelength distributed Bragg reflector (DBR) semiconductor diode laser connected by an Y-shaped waveguide with photoconductive antennas is demonstrated. Two fibre…
A 56 W Power Amplifier with 2-Level Supply and Load Modulation
/forschung/publikationen/a-56-w-power-amplifier-with-2-level-supply-and-load-modulation
Dynamic load modulation is proposed to improve the efficiency of an RF power amplifier with discrete supply modulation. A 47.5 dBm, 2.7 GHz power amplifier is realized to show the potential…
Challenges in the Design of Wideband GaN-HEMT based Class-G RF-Power Amplifiers
/forschung/publikationen/challenges-in-the-design-of-wideband-gan-hemt-based-class-g-rf-power-amplifiers
In GaN-based power amplifiers (PA) the gain under continuous wave (CW) excitation compresses slowly over a wide power range. Also, due to memory-effects in the GaNHEMT, the gain for modulated…
Wideband 80 W Balanced Power Amplifier for ISM and LTE-Bands
/forschung/publikationen/wideband-80-w-balanced-power-amplifier-for-ism-and-lte-bands
An 80 W balanced GaN-HEMT power amplifier for 2.45-2.70 GHz using branch-line couplers is presented in this paper. Its performance is compared to a single-transistor solution. The analysis…
Reliable GaN HEMT Modeling Based on Chalmers Model and Pulsed S-Parameter Measurements
/forschung/publikationen/reliable-gan-hemt-modeling-based-on-chalmers-model-and-pulsed-s-parameter-measurements
GaN HEMT performance is still compromised by trapping effects, but no commercial circuit simulator already provides compact models that account for these effects. This work explores the capability of…
VSWR Protection of Power Amplifiers Using BST Components
/forschung/publikationen/vswr-protection-of-power-amplifiers-using-bst-components
A VSWR-protected ISM-band PA was realized using a BST based varactor for detuning of the input matching. Output VSWR levels of 30:1 can be tolerated by applying a varactor bias voltage of up to…