Suche

Regeln für die Suche

  • Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
  • Maximal 200 Zeichen insgesamt
  • Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
  • UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
  • Alle Suchwörter werden zu Kleinschreibung konvertiert
Suchergebnisse 961 bis 970 von 5315

Miniaturized diode laser module emitting green light at 532 nm with a power of more than 900 mW for next-generation holographic displays

/forschung/publikationen/miniaturized-diode-laser-module-emitting-green-light-at-532nbspnm-with-a-power-of-more-than-900nbspmw-for-next-generation-holographic-displays

We present a micro-integrated laser module based on an amplified diode laser and second harmonic generation which is a promising candidate for a green light source in next-generation 3D holographic…

Watt-level red-emitting diode lasers and modules for display applications

/forschung/publikationen/watt-level-red-emitting-diode-lasers-and-modules-for-display-applications

Red-emitting lasers for display applications require high output powers and a high visibility. We demonstrate diode lasers and modules in the red spectral range based on AlGaInP with optical output…

Reconfigurable package integrated 20W RF power GaN HEMT with discrete thick-film MIM BST varactors

/forschung/publikationen/reconfigurable-package-integrated-20w-rf-power-gan-hemt-with-discrete-thick-film-mim-bst-varactors

A novel package integrated solution for gallium nitride high-electron-mobility transistors with an electronically two-dimensional reconfigurable L-section matching network is presented. Thick-film…

A Novel Model for Digital Predistortion of Discrete Level Supply-Modulated RF Power Amplifiers

/forschung/publikationen/a-novel-model-for-digital-predistortion-of-discrete-level-supply-modulated-rf-power-amplifiers

The linearization of a discrete level supplymodulated RF power amplifier using digital predistortion (DPD) is investigated. The characteristics of the system are evaluated and a novel DPD model,…

High duty cycle, highly efficient fiber coupled 940-nm pump module for high-energy solid-state lasers

/forschung/publikationen/high-duty-cycle-highly-efficient-fiber-coupled-940-nm-pump-module-for-high-energy-solid-state-lasers

Tailored diode laser single emitters with long (6 mm) resonators and wide (1.2 mm) emission apertures that operate with 940 nm emission wavelength were assembled in novel edge-cooled…

Rear-side resonator architecture for the passive coherent combining of high-brightness laser diodes

/forschung/publikationen/rear-side-resonator-architecture-for-the-passive-coherent-combining-of-high-brightness-laser-diodes

We describe a new coherent beam combining architecture based on passive phase locking of emitters in an extended cavity on the rear facet and their coherent combination on the front facet. This…

Impact of acceptor concentration on the resistivity of Ni/Au p-contacts on semipolar (20-21) GaN:Mg

/forschung/publikationen/impact-of-acceptor-concentration-on-the-resistivity-of-niau-p-contacts-on-semipolar-20-21-ganmg

The p-type doping of GaN with Mg, in particular doping of p++ cap layers and its influence on the resistivity of Ni/Au contacts on semipolar (20-21) GaN, has been investigated. For this purpose, we…

Power performance of 65 nm CMOS integrated LDMOS transistors at WLAN and X-band frequencies

/forschung/publikationen/power-performance-of-65nbspnm-cmos-integrated-ldmos-transistors-at-wlan-and-x-band-frequencies

Laterally diffused metal oxide semiconductor (LDMOS) transistors with 10 V breakdown voltage have been implemented in a 65 nm Complementary metal oxide semiconductor (CMOS) process without…

Enabling novel functionality in heavily doped ZnO:Ga by nanostructuring: an efficient plasmonic refractive index sensor

/forschung/publikationen/enabling-novel-functionality-in-heavily-doped-znoga-by-nanostructuring-an-efficient-plasmonic-refractive-index-sensor

We demonstrate a proof-of-concept refractive index sensor based on heavily doped ZnO:Ga nanostructured in a grating configuration, which supports free space excitation of propagating surface…

Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements

/forschung/publikationen/determination-of-polarization-fields-in-group-iii-nitride-heterostructures-by-capacitance-voltage-measurements

The polarization fields in wurtzite group III-nitrides strongly influence the optical properties of InAlGaN-based light emitters, e.g., the electron and hole wave function overlap in quantum wells.…