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High-Sensitivity Wideband THz Detectors Based on GaN HEMTs with Integrated Bow-Tie Antennas
/forschung/publikationen/high-sensitivity-wideband-thz-detectors-based-on-gan-hemts-with-integrated-bow-tie-antennas
This paper reports on antenna-coupled field-effect transistors for the detection of terahertz radiation (TeraFETs), based on AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs are…
G-Band Frequency Doubler based on InP Transferred-Substrate Technology
/forschung/publikationen/g-band-frequency-doubler-based-on-inp-transferred-substrate-technology
A G-band broadband frequency doubler based on InP transferred-substrate (TS) InP-DHBT technology is presented. The MMIC utilizes a two 2-finger HBTs with a total emitter size of…
Solar-blind AlGaN MSM photodetectors with 24% external quantum efficiency at 0 V
/forschung/publikationen/solar-blind-algan-msm-photodetectors-with-24-external-quantum-efficiency-at-0-v
By utilising an asymmetric metallisation scheme to fabricate an AlGaN-based solar-blind metal-semiconductor-metal photodetector, a zero-bias external quantum efficiency (EQE) of 24% for illumination…
UV-C Lasing From AlGaN Multiple Quantum Wells on Different Types of AlN/Sapphire Templates
/forschung/publikationen/uv-c-lasing-from-algan-multiple-quantum-wells-on-different-types-of-alnsapphire-templates
AlGaN multiple quantum well lasers for optical pumping have been grown by metal-organic vapor phase epitaxy on high and low dislocation density AlN/sapphire templates. Lasers on planar templates…
Modal Behavior of an External Cavity Diode Laser
/forschung/publikationen/modal-behavior-of-an-external-cavity-diode-laser
This paper reports the results of numerical investigations of the modal behavior of an external cavity diode laser device composed of a semiconductor laser and a distant Bragg grating, which provides…
Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes
/forschung/publikationen/strongly-transverse-electric-polarized-emission-from-deep-ultraviolet-algan-quantum-well-light-emitting-diodes
The optical polarization of emission from ultraviolet (UV) light emitting diodes (LEDs) based on (0001)-oriented AlxGa1-xN multiple quantum wells (MQWs) has been studied by simulations and…
High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications
/forschung/publikationen/high-temperature-performances-of-normally-off-p-gan-gate-algangan-hemts-on-sic-and-si-substrates-for-power-applications
We analyse high temperature effects (up to 420°C) in the performances of p-GaN gate normally-off AlGaN/GaN HEMTs on Si and SiC substrates for power applications. With increasing temperature, IDMAX…
Progress in the development of kilowatt-class diode laser bars for pump applications
/forschung/publikationen/progress-in-the-development-of-kilowatt-class-diode-laser-bars-for-pump-applications
Progress in diode laser pump bars is presented. Powers above 1 kW per bar are confirmed at 880 nm, and 940...980 nm, with operating efficiency ~50%. Operation at 200 K increases…
The Influence of Differential Modal Gain on the Filamentary Behavior of Broad Area Diode Lasers
/forschung/publikationen/the-influence-of-differential-modal-gain-on-the-filamentary-behavior-of-broad-area-diode-lasers
High power diode lasers with low modal gain (∼4 cm-1), predicted to operate with very low filamentation, are shown to operate with near-field modulation depth half that of reference devices…
Limitations to brightness in high power laser diodes
/forschung/publikationen/limitations-to-brightness-in-high-power-laser-diodes
A review is presented on how diagnostic studies, technological and design improvements and novel device configurations have enabled a more than fourfold improvement in lateral brightness in high…