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A 2-W GaN-based Three-level Class-D Power Amplifier with Tunable Back-off Efficiency
/forschung/publikationen/a-2-w-gan-based-three-level-class-d-power-amplifier-with-tunable-back-off-efficiency
This paper presents a voltage-mode three-level class-D gallium nitride (GaN) power amplifier (PA) for the 700-MHz band. The PA achieves a drain efficiency of 68.7%, at a maximum output power of…
GaN MMIC Active Arrays with Space Power Combination
/forschung/publikationen/gan-mmic-active-arrays-with-space-power-combination
This paper discusses the implementation of a K/Ka band GaN MMIC for developing space active arrays with space power combination, as a way to overcome TWTA needs. The obtained results, including the…
Highly Efficient Class-G Supply-Modulated Amplifier with 75 MHz Modulation Bandwidth for 1.8-1.9 GHz LTE FDD Applications
/forschung/publikationen/highly-efficient-class-g-supply-modulated-amplifier-with-75-mhz-modulation-bandwidth-for-18-19-ghz-lte-fdd-applications
This paper presents a broadband and highly efficient class-G supply modulated amplifier system. The system covers the full LTE band 1805-1880 MHz. The core element is the class-G supply…
An Active Balanced Up-Converter Module in InP-on-BiCMOS Technology
/forschung/publikationen/an-active-balanced-up-converter-module-in-inp-on-bicmos-technology
This paper presents an active up-converter realized as hetero-integrated module in InP-on-BiCMOS technology. It consists of a fundamental Voltage Controlled Oscillator (VCO) in 0.25 µm…
A 14 W Wideband Supply-Modulated System with Reverse Buck Converter and Floating-Ground RF Power Amplifier
/forschung/publikationen/a-14-w-wideband-supply-modulated-system-with-reverse-buck-converter-and-floating-ground-rf-power-amplifier
This paper presents a wideband supply-modulated system with a floating ground RF power amplifier and a reverse buck topology DC/DC converter. The power amplifier and the reverse buck converter are…
Thick-Film MIM BST Varactors for GaN Power Amplifiers with Discrete Dynamic Load Modulation
/forschung/publikationen/thick-film-mim-bst-varactors-for-gan-power-amplifiers-with-discrete-dynamic-load-modulation
Due to their extremely low static current consumption, varactors based on BST are perfect devices for realization of tunable and re-configurable components. This work presents fully screen-printed…
A Drain Lag Model for GaN HEMT based on Chalmers Model and Pulsed S-Parameter Measurements
/forschung/publikationen/a-drain-lag-model-for-gan-hemt-based-on-chalmers-model-and-pulsed-s-parameter-measurements
This paper addresses a novel approach to account for trapping effects in the large-signal description of GaN HEMTs. Instead of relying on an internal effective gate voltage, which is not very…
Watt-level yellow emitting lasers by frequency doubling of high power diode lasers
/forschung/publikationen/watt-level-yellow-emitting-lasers-by-frequency-doubling-of-high-power-diode-lasers
Distributed Bragg reflector tapered diode lasers (DBR-TPL) based on a quantum-well structure are presented, which emit at various wavelengths between 1100 and 1200 nm. Long lifetimes of these…
Reconfigurable Packaged GaN Power Amplifier Using Thin-Film BST Varactors
/forschung/publikationen/reconfigurable-packaged-gan-power-amplifier-using-thin-film-bst-varactors
A compact and reconfigurable GaN HEMT power amplifier using thin-film BST varactors, mounted inside a customized RF package is presented. With tuning of input and output matching networks several…
The Efficiency/Bandwidth Trade-Off in Class-G Supply-Modulated Power Amplifiers
/forschung/publikationen/the-efficiencybandwidth-trade-off-in-class-g-supply-modulated-power-amplifiers
This work deals with class-G, i.e. discrete level, supply modulated systems. It is investigated how the efficiency improvement achievable through this approach depends on the maximum switching…