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Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices
/forschung/publikationen/study-of-damage-formation-and-annealing-of-implanted-iii-nitride-semiconductors-for-optoelectronic-devices
An n-GaN/n-AlGaN/p-GaN light emitting diode (LED) structure was implanted with Eu ions. High temperature high pressure annealing at 1400 °C efficiently decreases implantation damage and…
On the formation of cleaved mirror facets of GaN-based laser diodes - A comparative study of diamond-tip edge-scribing and laser scribing
/forschung/publikationen/on-the-formation-of-cleaved-mirror-facets-of-gan-based-laser-diodes-a-comparative-study-of-diamond-tip-edge-scribing-and-laser-scribing
The formation of cleaved mirror facets of GaN-based laser diodes on c-plane GaN substrates is investigated using either diamond-tip edge-scribing or laser scribing with a skip-and-scribe method. The…
Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolar InxGa1-xN/GaN quantum wells
/forschung/publikationen/impact-of-inhomogeneous-broadening-on-optical-polarization-of-high-inclination-semipolar-and-nonpolar-inxga1-xngan-quantum-wells
We investigate the influence of inhomogeneous broadening on the optical polarization properties of high-inclination semipolar and nonpolar InxGa1-xN/GaN quantum wells. Different planar m-plane and…
High power surface-grating stabilized narrow-stripe broad area lasers with beam parameter product < 2 mm×mrad
/forschung/publikationen/high-power-surface-grating-stabilized-narrow-stripe-broad-area-lasers-with-beam-parameter-product-ltnbsp2nbspmmxmrad
Narrow-stripe (30 µm aperture) broad area lasers with monolithically integrated DFB-surface-gratings deliver 5 W optical output per emitter with 50% conversion efficiency, spectral width…
Compact mode-locked diode laser system for precision frequency comparisons in microgravity experiments
/forschung/publikationen/compact-mode-locked-diode-laser-system-for-precision-frequency-comparisons-in-microgravity-experiments
We present a compact mode-locked diode laser designed to generate a frequency comb in the wavelength range of 780 nm. The spectral bandwidth exceeds 15 nm (- 20 dB level) with…
Optical Frequency Combs for Space Applications
/forschung/publikationen/optical-frequency-combs-for-space-applications
Optical frequency comb-based high resolution laser spectroscopy has been demonstrated in space under micro-gravity on two sounding rocket based experiments. The comb has been used to simultaneously…
Scalable semipolar gallium nitride templates for high-speed LEDs
/forschung/publikationen/scalable-semipolar-gallium-nitride-templates-for-high-speed-leds
Metal organic vapor phase deposition on etched 4-inch-diameter sapphire wafers is used to create low-defect-density gallium nitride templates.
A compact and robust diode laser system for atom interferometry on a sounding rocket
/forschung/publikationen/a-compact-and-robust-diode-laser-system-for-atom-interferometry-on-a-sounding-rocket
We present a diode laser system optimized for laser cooling and atom interferometry with ultra-cold rubidium atoms aboard sounding rockets as an important milestone toward space-borne quantum…
Atomic signatures of local environment from core-level spectroscopy in β-Ga2O3
/forschung/publikationen/atomic-signatures-of-local-environment-from-core-level-spectroscopy-in-b-ga2o3
We present a joint theoretical and experimental study on core-level excitations from the oxygen K edge of β-Ga2O3. A detailed analysis of the electronic structure reveals the importance of O-Ga…
AlN growth on nano-patterned sapphire: A route for cost efficient pseudo substrates for deep UV LEDs
/forschung/publikationen/aln-growth-on-nano-patterned-sapphire-a-route-for-cost-efficient-pseudo-substrates-for-deep-uv-leds
C-plane-oriented sapphire substrates that were patterned on the nanoscale were overgrown by AlN using metal-organic vapor phase epitaxy. The occurrence of undesired misaligned AlN growth was…