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Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate
/forschung/publikationen/technology-and-reliability-of-normally-off-gan-hemts-with-p-type-gate
GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and…
Cross Conduction of GaN HFETs in Half-Bridge Converters
/forschung/publikationen/cross-conduction-of-gan-hfets-in-half-bridge-converters
Cross conduction in GaN HFETs is particularly critical due to the high dVDS/dt and small gatesource capacitances in conjunction with moderate drain-gate feed-back capacitances. Therefore, the…
High-power lasers
/forschung/publikationen/high-power-lasers
High-power lasers H. Wenzel, A. Zeghuzi Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
Design of a compact diode laser system for dual-species atom interferometry with rubidium and potassium in space
/forschung/publikationen/design-of-a-compact-diode-laser-system-for-dual-species-atom-interferometry-with-rubidium-and-potassium-in-space
We report on a micro-integrated high power diode laser based system for the MAIUS II/III missions. The lasersystem features fiber coupled and frequency stabilized external cavity diode lasers (ECDL)…
Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodes
/forschung/publikationen/effect-of-electron-blocking-layer-doping-and-composition-on-the-performance-of-310-nm-light-emitting-diodes
The effects of composition and p-doping profile of the AlGaN:Mg electron blocking layer (EBL) in 310 nm ultraviolet B (UV-B) light emitting diodes (LEDs) have been investigated. The carrier…
Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties
/forschung/publikationen/investigation-of-surface-donors-in-al2o3algangan-metal-oxide-semiconductor-heterostructures-correlation-of-electrical-structural-and-chemical-properties
III-N surface polarization compensating charge referred here to as ‘surface donors’ (SD) was analyzed in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) heterojunctions using scaled oxide films grown…
Highly Efficient 1.8-GHz Amplifier With 120-MHz Class-G Supply Modulation
/forschung/publikationen/highly-efficient-18-ghz-amplifier-with-120-mhz-class-g-supply-modulation
A broadband and highly efficient class-G supply modulated power amplifier (PA) system with 120-MHz instantaneous modulation bandwidth operating in the 1.8-GHz band is presented in this paper. The…
70 W GaN-HEMT Ku-Band Power Amplifier in MIC Technology
/forschung/publikationen/70-w-gan-hemt-ku-band-power-amplifier-in-mic-technology
In this paper the design, implementation, and experimental results of a Ku-band 70 W GaN-HEMT power amplifier (PA) for satellite communication are presented. A two-stage design approach with two…
Multi-Octave bandwidth, 100 W GaN power amplifier using planar transmission line transformer
/forschung/publikationen/multi-octave-bandwidth-100-w-gan-power-amplifier-using-planar-transmission-line-transformer
In this paper, design, implementation, and experimental results of efficient, high-power, and multi-octave gallium nitride-high electron mobility transistor power amplifier are presented. To overcome…
10.5 W central lobe output power obtained with an efficient 1030 nm DBR tapered diode laser
/forschung/publikationen/105-w-central-lobe-output-power-obtained-with-an-efficient-1030-nm-dbr-tapered-diode-laser
An efficient, 1030 nm distributed Bragg reflector (DBR) tapered diode laser with 10.5 W central lobe output power is presented. The laser is based on a tapered DBR grating for enhanced…