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The Influence of Differential Modal Gain on the Filamentary Behavior of Broad Area Diode Lasers
/forschung/publikationen/the-influence-of-differential-modal-gain-on-the-filamentary-behavior-of-broad-area-diode-lasers
High power diode lasers with low modal gain (∼4 cm-1), predicted to operate with very low filamentation, are shown to operate with near-field modulation depth half that of reference devices…
Limitations to brightness in high power laser diodes
/forschung/publikationen/limitations-to-brightness-in-high-power-laser-diodes
A review is presented on how diagnostic studies, technological and design improvements and novel device configurations have enabled a more than fourfold improvement in lateral brightness in high…
Joule-Class 940 nm Diode Laser Bars for Millisecond Pulse Applications
/forschung/publikationen/joule-class-940-nm-diode-laser-bars-for-millisecond-pulse-applications
Diode laser bars with optimized epitaxial designs, long resonators and passivated facets deliver joule-class millisecond pulses (kilowatts of peak power) with the properties needed by advanced…
Spatial inhomogeneities in AlxGa1-xN quantum wells induced by the surface morphology of AlN/sapphire templates
/forschung/publikationen/spatial-inhomogeneities-in-alxga1-xn-quantum-wells-induced-by-the-surface-morphology-of-alnsapphire-templates
The effects of the template on the optical and structural properties of Al0.75Ga0.25N/Al0.8Ga0.2N multiple quantum well (MQWs) laser active regions have been investigated. The laser structures for…
V-pit to truncated pyramid transition in AlGaN-based heterostructures
/forschung/publikationen/v-pit-to-truncated-pyramid-transition-in-algan-based-heterostructures
The formation of three-dimensional truncated pyramids after the deposition of AlN/GaN superlattices onto (0001) AlN/sapphire templates has been analysed by atomic force microscopy as well as…
Compact Handheld Probe for Shifted Excitation Raman Difference Spectroscopy with Implemented Dual-Wavelength Diode Laser at 785 Nanometers
/forschung/publikationen/compact-handheld-probe-for-shifted-excitation-raman-difference-spectroscopy-with-implemented-dual-wavelength-diode-laser-at-785nbspnanometers
A compact handheld probe for shifted-excitation Raman difference spectroscopy (SERDS) with an implemented dual-wavelength diode laser with an emission at 785 nm is presented. The probe is milled…
Investigation of the Dynamic On-State Resistance of 600V Normally-off and Normally-on GaN HEMTs
/forschung/publikationen/investigation-of-the-dynamic-on-state-resistance-of-600v-normally-off-and-normally-on-gan-hemts
In this paper, current collapse phenomena and thermal effects in newly developed normally-off and normally-on GaN HEMTs are investigated. The experimental results show that a high off-state voltage…
Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors
/forschung/publikationen/investigation-of-gate-diode-degradation-in-normally-off-p-ganalgangan-high-electron-mobility-transistors
Gate diode conduction mechanisms were analyzed in normally-off p-GaN/AlGaN/GaN high-electron mobility transistors grown on Si wafers before and after forward bias stresses. Electrical…
Experimental Analysis and Modeling of GaN Normally-off HFETs with Trapping Effects
/forschung/publikationen/experimental-analysis-and-modeling-of-gan-normally-off-hfets-with-trapping-effects
A 70 mΩ / 600 V normally-off AlGaN/GaN HFET is analyzed and modeled. In particular, static and dynamic characteristics are investigated with the focus on modeling trapping effects…
High power picosecond and nanosecond diode laser sources in the wavelength range 650 nm to 1100 nm
/forschung/publikationen/high-power-picosecond-and-nanosecond-diode-laser-sources-in-the-wavelength-range-650nbspnm-to-1100nbspnm
Optical pulses in the nanosecond and picosecond rangescan be generated by gain switching, Q-switching and mode-locking of diode lasers, either as stand-alone devices or in MOPA systemscombining…