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Long-Resonator Laser-Diode Bars for Efficient kW Emission
/forschung/publikationen/long-resonator-laser-diode-bars-for-efficient-kw-emission
Long-Resonator Laser-Diode Bars for Efficient kW Emission M.M. Karow1, T. Kaul1, S. Knigge1, A. Maaßdorf1, G. Erbert1,2, S.G. Strohmaier2 and P. Crump1 …
Ultralow pulse-to-pulse timing jitter for telecommunication applications by a monolithic passively mode-locked multi quantumwell semiconductor laser emitting at 1080 nm
/forschung/publikationen/ultralow-pulse-to-pulse-timing-jitter-for-telecommunication-applications-by-a-monolithic-passively-mode-locked-multi-quantumwell-semiconductor-laser-emitting-at-1080-nm
Ultralow pulse-to-pulse timing jitter for telecommunication applications by a monolithic passively mode-locked multi quantumwell semiconductor laser emitting at 1080 nm C. Weber1,…
In-situ photoluminescence measurements during MOVPE of GaN and InGaN in a CCS reactor
/forschung/publikationen/in-situ-photoluminescence-measurements-during-movpe-of-gan-and-ingan-in-a-ccs-reactor
Gallium Nitride (GaN) and Indium Gallium Nitride (InGaN) have become important semiconductor materials for the LED lighting industry. Recently, a photoluminescence (PL) technique for direct in-situ…
On the EQE-bias characteristics of bottom-illuminated AlGaN-based metal-semiconductor-metal photodetectors with asymmetric electrode geometry
/forschung/publikationen/on-the-eqe-bias-characteristics-of-bottom-illuminated-algan-based-metal-semiconductor-metal-photodetectors-with-asymmetric-electrode-geometry
The bias dependence of the external quantum efficiency (EQE) of bottom-illuminated Al0.5Ga0.5N/AlN metal-semiconductor-metal photodetectors shows certain features which are directly related to the…
Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111)
/forschung/publikationen/surface-preparation-and-patterning-by-nano-imprint-lithography-for-the-selective-area-growth-of-gaas-nanowires-on-si111
The selective area growth of Ga-assisted GaAs nanowires (NWs) with a high vertical yield on Si(111) substrates is still challenging. Here, we explore different surface preparations and their impact…
Chip design for thin-film deep ultraviolet LEDs fabricated by laser lift-off of the sapphire substrate
/forschung/publikationen/chip-design-for-thin-film-deep-ultraviolet-leds-fabricated-by-laser-lift-off-of-the-sapphire-substrate
We report on a chip design which allows the laser lift-off (LLO) of the sapphire substrate sustaining the epitaxial film of flip-chip mounted deep ultraviolet light emitting diodes. A nanosecond…
Extended 9.7 nm tuning range in a MOPA system with a tunable dual grating Y-branch laser
/forschung/publikationen/extended-97nm-tuning-range-in-a-mopa-system-with-a-tunable-dual-grating-y-branch-laser
In this Letter, we present a tunable Y-branch hybrid master oscillator power amplifier (MOPA) with 5.5 W output power, emitting between 973.7 and 983.4 nm. The MO is a monolithic Y-branch…
Efficient, High Brightness 1030 nm DBR Tapered Diode Lasers With Optimized Lateral Layout
/forschung/publikationen/efficient-high-brightness-1030-nm-dbr-tapered-diode-lasers-with-optimized-lateral-layout
Efficient, high brightness 1030 nm distributed Bragg reflector (DBR) tapered diode lasers with optimized lateral waveguide and grating designs are presented in this paper. The layout changes…
High-quality AlN grown on a thermally decomposed sapphire surface
/forschung/publikationen/high-quality-aln-grown-on-a-thermally-decomposed-sapphire-surface
In this study we show how to realize a self-assembled nano-patterned sapphire surface on 2 inch diameter epi-ready wafer and the subsequent AlN overgrowth both in the same metal-organic vapor…
Reduction of Optical Feedback Originating From Ferroelectric Domains of Periodically Poled Crystals
/forschung/publikationen/reduction-of-optical-feedback-originating-from-ferroelectric-domains-of-periodically-poled-crystals
Optical feedback originating from the interfaces of the periodically poled domains of a nonlinear crystal is usually blocked by a bulky optical isolator to avoid an influence on the pump source.…