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New class of compact diode pumped sub 10 fs lasers for biomedical applications
/forschung/publikationen/new-class-of-compact-diode-pumped-sub-10-fs-lasers-for-biomedical-applications
Diode-pumping Ti:sapphire lasers promises a new approach to low-cost femtosecond light sources. Thus in recent years much effort has been taken just to overcome the quite low power and low beam…
Influence of the LED heterostructure on the degradation behavior of (InAlGa)N-based UV-B LEDs
/forschung/publikationen/influence-of-the-led-heterostructure-on-the-degradation-behavior-of-inalgan-based-uv-b-leds
In this paper we report on the influence of the heterostructure design of (InAlGa)N-based UV-B LEDs grown by metal-organic vapor phase epitaxy on sapphire substrates on the degradation behavior of…
Generation of 7 W nanosecond pulses with 670 nm ridge-waveguide lasers
/forschung/publikationen/generation-of-7-w-nanosecond-pulses-with-670-nm-ridge-waveguide-lasers
The aim of this paper is to present detailed experimental and theoretical investigations of the behavior of ridge-waveguide (RW) lasers emitting at 670 nm under injection of sub-ns current…
Pulsed hybrid dual wavelength Y-branch-DFB laser - tapered amplifier system suitable for water vapor detection at 965 nm with 16 W peak power
/forschung/publikationen/pulsed-hybrid-dual-wavelength-y-branch-dfb-laser-tapered-amplifier-system-suitable-for-water-vapor-detection-at-965-nm-with-16-w-peak-power
A master oscillator power amplifier system emitting alternatingly at two neighbored wavelengths around 965 nm is presented. As master oscillator (MO) a Y-branch DFB-laser is used. The two…
5,000 h reliable operation of 785 nm dual-wavelength DBR-RW diode lasers suitable for Raman spectroscopy and SERDS
/forschung/publikationen/5000-h-reliable-operation-of-785-nm-dual-wavelength-dbr-rw-diode-lasers-suitable-for-raman-spectroscopy-and-serds
5,000 h reliable operation of 785 nm dual-wavelength DBR-RW diode lasers suitable for Raman spectroscopy and SERDS B. Sumpf, A. Müller, M. Maiwald Ferdinand-Braun-Institut,…
Power performance of 65 nm CMOS integrated LDMOS transistors at WLAN and X-band frequencies
/forschung/publikationen/dbr-tapered-diode-laser-at-1030-nm-with-nearly-diffraction-limited-narrowband-emission-and-127-w-of-optical-output-power
Nearly diffraction-limited emission from a distributed Bragg reflector (DBR) tapered diode laser is presented. Intrinsic wavelength stabilization is achieved with a 3rd order DBR grating manufactured…
Power performance of 65 nm CMOS integrated LDMOS transistors at WLAN and X-band frequencies
/forschung/publikationen/novel-approaches-to-increasing-the-brightness-of-broad-area-lasers
Progress in studies to increase the lateral brightness Blat of broad area lasers is reviewed. Blat=Pout/BPPlat is maximized by developing designs and technology for lowest lateral beam parameter…
Power performance of 65 nm CMOS integrated LDMOS transistors at WLAN and X-band frequencies
/forschung/publikationen/process-control-of-mocvd-growth-for-leds-by-in-situ-photoluminescence
Development and manufacturing of LED structures is still driven by production cost reduction and performance improvements. Therefore, in-situ monitoring during the epitaxial process plays a key role…
Power performance of 65 nm CMOS integrated LDMOS transistors at WLAN and X-band frequencies
/forschung/publikationen/development-of-semipolar-11-22-leds-on-gan-templates
We report on blue and green light-emitting-diodes (LEDs) grown on (11-22)-GaN templates. The templates were created by overgrowth on structured r-plane sapphire substrates. Low defect density,…
Master-oscillator power-amplifier in the red spectral range for holographic displays
/forschung/publikationen/master-oscillator-power-amplifier-in-the-red-spectral-range-for-holographic-displays
RGB-light sources with a coherence length of several meters are required for holographic displays. Furthermore, these emitters must feature a high luminance and must be sufficiently small in size, to…