Suche
Regeln für die Suche
- Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
- Maximal 200 Zeichen insgesamt
- Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
- UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
- Alle Suchwörter werden zu Kleinschreibung konvertiert
Pulsed RF Characterization of Envelope Tracking Systems for Improved Shaping Function Extraction
/forschung/publikationen/pulsed-rf-characterization-of-envelope-tracking-systems-for-improved-shaping-function-extraction
This paper presents a measurement setup for pulsed RF characterization of a buck-converter based envelope tracking (ET) system. In contrast to continuous wave (CW) measurements, the proposed method…
Benchmarking of RF Measurement Systems for Digital Predistortion using Iterative Learning Control
/forschung/publikationen/benchmarking-of-rf-measurement-systems-for-digital-predistortion-using-iterative-learning-control
In this study iterative learning control (ILC) linearization is used to characterize the performance of a measurement system for modulated measurements and digital predistortion of RF power…
Impact of Parasitic Coupling on Multiline TRL Calibration
/forschung/publikationen/impact-of-parasitic-coupling-on-multiline-trl-calibration
On-wafer measurements of any Device Under Test (DUT) usually require the application of a calibration algorithm to eliminate unwanted but unavoidable effects due to the probe tip properties, the…
GaN-Based Digital Transmitter Chain Utilizing Push-Pull Gate Drivers for High Switching Speed and Built-In DPD
/forschung/publikationen/gan-based-digital-transmitter-chain-utilizing-push-pull-gate-drivers-for-high-switching-speed-and-built-in-dpd
This paper presents a fully digital transmitter chain, including a modulator and a digital microwave power amplifier (PA) MMIC. It uses push-pull drivers for the gates of the class-D final stage for…
D-band LNA using a 40-nm GaAs mHEMT technology
/forschung/publikationen/d-band-lna-using-a-40-nm-gaas-mhemt-technology
A D-band LNA is reported serving as a test vehicle of an under-development 40 nm GaAs HEMT technology developed by OMMIC foundry. The amplifier, designed on the basis of custom small-signal…
EM Simulation Assisted Parameter Extraction for the Modeling of Transferred-Substrate InP HBTs
/forschung/publikationen/em-simulation-assisted-parameter-extraction-for-the-modeling-of-transferred-substrate-inp-hbts
In this paper an electromagnetic (EM) simulation assisted parameters extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic…
On the Optimization of GaN HEMT Layout for Highly Rugged Low-Noise Amplifier Design
/forschung/publikationen/on-the-optimization-of-gan-hemt-layout-for-highly-rugged-low-noise-amplifier-design
GaN low-noise amplifiers need to provide low noise figure, but are also often expected to be highly rugged. This paper addresses the question, how HEMT devices within a certain technology can be…
Panel Design of a MIMO Imaging Radar at W-Band for Space Applications
/forschung/publikationen/panel-design-of-a-mimo-imaging-radar-at-w-band-for-space-applications
This paper describes the concept of a modularized multiple input multiple output (MIMO) imaging radar in the frequency range of 85 to 95GHz that enables high resolution 3D imaging for space…
Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N
/forschung/publikationen/effect-of-cl2-plasma-treatment-and-annealing-on-vanadium-based-metal-contacts-to-si-doped-al075ga025n
In order to understand the electrical properties of V/Al/Ni/Au metal contacts to Si-doped Al0.75Ga0.25N layers, X-ray photoelectron spectroscopy analysis was performed on differently treated AlGaN:Si…
Efficient coupling of the inhomogeneous current spreading model to the dynamic electro-optical solver for broad-area edge-emitting semiconductor devices
/forschung/publikationen/efficient-coupling-of-the-inhomogeneous-current-spreading-model-to-the-dynamic-electro-optical-solver-for-broad-area-edge-emitting-semiconductor-devices
We extend a 2 (space) + 1 (time)-dimensional traveling wave model for broad-area edge-emitting semiconductor lasers by a model for inhomogeneous current spreading from the contact to the active zone…