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Temperature and doping dependent changes in surface recombination during UV illumination of (Al)GaN bulk layers

/forschung/publikationen/temperature-and-doping-dependent-changes-in-surface-recombination-during-uv-illumination-of-algan-bulk-layers

We have studied the effect of continuous illumination with above band gap energy on the emission intensity of polar (Al)GaN bulk layers during the photoluminescence experiments. A temporal change in…

Superconducting ferecrystals: turbostratically disordered atomic-scale layered (PbSe)1.14(NbSe2)n thin films

/forschung/publikationen/superconducting-ferecrystals-turbostratically-disordered-atomic-scale-layered-pbse114nbse2n-thin-films

Hybrid electronic heterostructure films of semi- and superconducting layers possess very different properties from their bulk counterparts. Here, we demonstrate superconductivity in ferecrystals:…

1180nm DBR-ridge waveguide lasers with strain compensation layers in the active region for lifetime improvement

/forschung/publikationen/1180nm-dbr-ridge-waveguide-lasers-with-strain-compensation-layers-in-the-active-region-for-lifetime-improvement

DBR ridge waveguide lasers at 1180nm were developed based on strained InGaAs quantum wells. The lasers feature a lifetime of more than 1000h at 100mW and are believed to be a key component for…

Experimental and theoretical studies into the limits to peak power in GaAs-based diode lasers

/forschung/publikationen/experimental-and-theoretical-studies-into-the-limits-to-peak-power-in-gaas-based-diode-lasers

An overview is presented of progress in studies to diagnose and address limits to peak power in high power diode lasers. Key terms in advanced structures include carrier losses in the p-side…

Assessing the Impact of Thermal Barriers on the Thermal Lens Shape in High Power Broad Area Diode Lasers

/forschung/publikationen/assessing-the-impact-of-thermal-barriers-on-the-thermal-lens-shape-in-high-power-broad-area-diode-lasers

Measured thermal profiles on GaAs broad area diode lasers (Popt > 10 W, λ = 910 nm) were reproduced in FEM simulation, indicating an unforeseen thermal barrier…

Studies of limitations to peak power and efficiency in diode lasers using extreme-double-asymmetric vertical designs

/forschung/publikationen/studies-of-limitations-to-peak-power-and-efficiency-in-diode-lasers-using-extreme-double-asymmetric-vertical-designs

High power diode lasers with novel extreme-double-asymmetric epitaxial designs with increased modal confinement in the well Γ achieve high efficiency (50%) and powers (14 W) at high continuous…

A portable shifted excitation Raman difference spectroscopy system: device and field demonstration

/forschung/publikationen/a-portable-shifted-excitation-raman-difference-spectroscopy-system-device-and-field-demonstration

In this paper, we present a portable shifted excitation Raman difference spectroscopy (SERDS) system applied in outdoor experiments. A dual-wavelength diode laser emitting at 785 nm is used as…

In-situ control of large area (11-22)-GaN growth on patterned r-plane sapphire

/forschung/publikationen/in-situ-control-of-large-area-11-22-gan-growth-on-patterned-r-plane-sapphire

This report describes in-situ measurements of multi-wavelength reflectance, wafer curvature and growth temperature during epitaxy of semi-polar (11-22)-GaN on 100 mm diameter r-plane PSS.…

MOVPE growth of laser structures for high-power applications at different ambient temperatures

/forschung/publikationen/movpe-growth-of-laser-structures-for-high-power-applications-at-different-ambient-temperatures

Laser structures for different operating temperatures were developed. Higher temperatures need an increase in barrier height to reduce carrier leakage. Best results for an emission wavelength of…

Near-field microscopy of waveguide architectures of InGaN/GaN diode lasers

/forschung/publikationen/near-field-microscopy-of-waveguide-architectures-of-ingangan-diode-lasers

Waveguide (WG) architectures of 420 nm emitting InGaN/GaN diode lasers are analyzed by photoluminescence and photocurrent spectroscopy using a nearfield scanning optical microscope that scans along…