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Flip-Chip Approach for 500 GHz Broadband Interconnects
/forschung/publikationen/flip-chip-approach-for-500-ghz-broadband-interconnects
This paper presents the design and characterization of a broadband transition in the range dc to 500 GHz using the flip-chip concept. The extremely wideband performance is attained by optimizations…
Manufacturable Low-Cost Flip-Chip Mounting Technology for 300-500-GHz Assemblies
/forschung/publikationen/manufacturable-low-cost-flip-chip-mounting-technology-for-300-500-ghz-assemblies
We developed a chip mounting technology suitable for low-cost assemblies in the 300-500-GHz frequency range, compatible with standard chip and submount fabrication techniques. The waveguide and…
Femtosecond semiconductor laser system with resonator-internal dispersion adaptation
/forschung/publikationen/femtosecond-semiconductor-laser-system-with-resonator-internal-dispersion-adaptation
We present a femtosecond laser diode system that is capable of autonomously adjusting itself to compensate for the external dispersion in an arbitrary application. The laser system contains a spatial…
Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs
/forschung/publikationen/recombination-mechanisms-and-thermal-droop-in-algan-based-uv-b-leds
This paper reports a comprehensive analysis of the origin of the electroluminescence (EL) peaks and of the thermal droop in UV-B AlGaN-based LEDs. By carrying out spectral measurements at several…
Concept and numerical simulations of a widely tunable GaAs-based sampled-grating diode laser emitting at 976 nm
/forschung/publikationen/concept-and-numerical-simulations-of-a-widely-tunable-gaas-based-sampled-grating-diode-laser-emitting-at-976-nm
Tunable diode lasers are essential components in various optical systems. The authors present a concept and simulations of a four-section, widely tunable GaAs-based sampled-grating (SG)…
Terahertz frequency generation with monolithically integrated dual wavelength distributed Bragg reflector semiconductor laser diode
/forschung/publikationen/terahertz-frequency-generation-with-monolithically-integrated-dual-wavelength-distributed-bragg-reflector-semiconductor-laser-diode
Optoelectronic terahertz (THz) generation techniques have helped to narrow the THz gap and have opened up a wealth of new applications for THz technology. However, the development of THz systems into…
Highly Reflective p-Contacts Made of Pd-Al on Deep Ultraviolet Light-Emitting Diodes
/forschung/publikationen/highly-reflective-p-contacts-made-of-pd-al-on-deep-ultraviolet-light-emitting-diodes
Highly reflective metal contacts for the p-layers of AlGaN-based deep ultraviolet light emitting diodes (DUV LEDs) emitting at 305 nm have been investigated. Different Pd-Al metal stacks have…
Spectral Mode Hop Characteristics of Ridge Waveguide Lasers With Distributed Bragg-Reflector
/forschung/publikationen/spectral-mode-hop-characteristics-of-ridge-waveguide-lasers-with-distributed-bragg-reflector
In this letter, the mode hop characteristics of distributed Bragg-reflector ridge waveguide lasers emitting at 1120 nm with different resonator geometries and facet reflectivities are…
Compact High Power Diode Laser MOPA System With 5.5 nm Wavelength Tunability
/forschung/publikationen/compact-high-power-diode-laser-mopa-system-with-55-nm-wavelength-tunability
A hybrid master oscillator power amplifier (MOPA) diode laser with 6.2 W output power at 971.8 nm is presented. It consists of a distributed Bragg reflector (DBR) laser, which is collimated…
Polarization-Engineered n+GaN/InGaN/AlGaN/GaN Normally-Off MOS HEMTs
/forschung/publikationen/polarization-engineered-n-ganinganalgangan-normally-off-mos-hemts
The proposal, processing and performance of n+GaN/InGaN/AlGaN/GaN normally-off metal-oxide-semiconductor (MOS) HEMTs with a recessed 2-µm long gate/8-µm source-drain distance are…