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Efficient coupling of inhomogeneous current spreading and electro-optical models for simulation of dynamics in broad-area semiconductor lasers
/forschung/publikationen/efficient-coupling-of-inhomogeneous-current-spreading-and-electro-optical-models-for-simulation-of-dynamics-in-broad-area-semiconductor-lasers
The aim of this work is an efficient implementation of a spatially resolved current spreading model defined in the vertical-lateral domain into a dynamic electro-optical solver acting in the…
Influence of Nonlinear Effects on the Characteristics of Pulsed High-Power BA DBR Lasers
/forschung/publikationen/influence-of-nonlinear-effects-on-the-characteristics-of-pulsed-high-power-ba-dbr-lasers
We analyze theoretically the influence of nonlinear effects such as spatial holeburning, 2-photon absorption and gain compression on the power-current and beam characteristics of a high-power…
An efficient W-band InP DHBT digital power amplifier
/forschung/publikationen/an-efficient-w-band-inp-dhbt-digital-power-amplifier
This paper presents for the first time high-efficiency W-band power amplifiers (PAs), the design of which follows the digital PA (DPA) design concept. Two DPAs with different output networks have…
A new modulator for digital RF power amplifiers utilizing a wavetable approach
/forschung/publikationen/a-new-modulator-for-digital-rf-power-amplifiers-utilizing-a-wavetable-approach
This paper presents for the first time a wavetable-based coding scheme to generate a high-speed binary input signal for digital RF power amplifiers. The approach maximizes the utilization of the time…
Noise in GaN HEMTs and Circuits
/forschung/publikationen/noise-in-gan-hemts-and-circuits
GaN HEMTs are known to outperform GaAs technologies in power applications, while their noise performance drew much less attention. Only recently, results were published for GaN that are competitive…
Mutual Interference in Calibration Line Configurations
/forschung/publikationen/mutual-interference-in-calibration-line-configurations
When using multiline TRL calibrations for correcting on-wafer measurements, the accuracy of the result depends crucially on the consistency of the calibration set. For example, each line standard…
Novel Digital Microwave PA with More Than 40% PAE Over 10 dB Power Back-Off Range
/forschung/publikationen/novel-digital-microwave-pa-with-more-than-40-pae-over-10-db-power-back-off-range
This paper presents a novel GaN-based digital power amplifier (PA) circuit with a high overall power-added efficiency (PAE) over a 10 dB power back-off range for the 800 MHz LTE-band. It…
A 2-W GaN-based Three-level Class-D Power Amplifier with Tunable Back-off Efficiency
/forschung/publikationen/a-2-w-gan-based-three-level-class-d-power-amplifier-with-tunable-back-off-efficiency
This paper presents a voltage-mode three-level class-D gallium nitride (GaN) power amplifier (PA) for the 700-MHz band. The PA achieves a drain efficiency of 68.7%, at a maximum output power of…
GaN MMIC Active Arrays with Space Power Combination
/forschung/publikationen/gan-mmic-active-arrays-with-space-power-combination
This paper discusses the implementation of a K/Ka band GaN MMIC for developing space active arrays with space power combination, as a way to overcome TWTA needs. The obtained results, including the…
Highly Efficient Class-G Supply-Modulated Amplifier with 75 MHz Modulation Bandwidth for 1.8-1.9 GHz LTE FDD Applications
/forschung/publikationen/highly-efficient-class-g-supply-modulated-amplifier-with-75-mhz-modulation-bandwidth-for-18-19-ghz-lte-fdd-applications
This paper presents a broadband and highly efficient class-G supply modulated amplifier system. The system covers the full LTE band 1805-1880 MHz. The core element is the class-G supply…