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Dynamic behaviour of a Low-Noise Amplifier GaN MMIC under input power overdrive
/forschung/publikationen/dynamic-behaviour-of-a-low-noise-amplifier-gan-mmic-under-input-power-overdrive
This paper presents the analysis of a highly robust low-noise amplifier subjected to high input power stress conditions. The LNA is realized in coplanar technology using the 0.25µm GaN-HEMT MMIC…
A 250 GHz Hetero-Integrated VCO with 0.7 mW Output Power in InP-on-BiCMOS Technology
/forschung/publikationen/a-250-ghz-hetero-integrated-vco-with-07nbspmw-output-power-in-inp-on-bicmos-technology
This paper presents a 250 GHz hetero-integrated VCO using InP-on-BiCMOS technology. It consists of a singleended Colpitts Voltage Controlled Oscillator (VCO) in 0.25 µm SiGe-BiCMOS…
Optimized Method for Achieving Accurate Signals for "True-Mode" S-Parameter Measurements
/forschung/publikationen/optimized-method-for-achieving-accurate-signals-for-quottrue-modequot-s-parameter-measurements
Due to the capabilities of modern vector network analyzers (VNAs), the usage of "True-Mode"-signals for characterizing and testing active differential devices is quite convenient.…
Design of a Triband Lumped Element Filter for Digital Microwave Power Amplifiers
/forschung/publikationen/design-of-a-triband-lumped-element-filter-for-digital-microwave-power-amplifiers
In this paper, a compact lumped element triband reconstruction filter for digital microwave power amplifier (PA) applications in the 0.8, 1.8 and 2.6 GHz band is presented. The proposed design…
An Efficient 290 GHz Harmonic Oscillator in Transferred-Substrate InP-DHBT Technology
/forschung/publikationen/an-efficient-290-ghz-harmonic-oscillator-in-transferred-substrate-inp-dhbt-technology
This paper presents a single-ended efficient 290 GHz harmonic oscillator, realized using 0.8 µm transferred-substrate (TS) InP-DHBT technology. The architecture of this oscillator is based…
Discrete RF-Power MIM BST Thick-Film Varactors
/forschung/publikationen/discrete-rf-power-mim-bst-thick-film-varactors
Discrete high power RF varactors based on barium-strontium-titanate are presented in this paper. They are targeting high power applications up to 3 GHz and feature power handling capabilities up…
A Compact Tri-Band GaN Voltage-Mode Class-D/S PA for Future 0.8/1.8/2.6 GHz LTE Picocell Applications
/forschung/publikationen/a-compact-tri-band-gan-voltage-mode-class-ds-pa-for-future-081826-ghz-lte-picocell-applications
This paper presents a compact tri-band voltage-mode class-S power amplifier module suitable for the LTE frequency bands of 0.8, 1.8 and 2.6 GHz. The demonstrator uses a broadband GaN…
Linearity Analysis of a 40 W Class-G-Modulated Microwave Power Amplifier
/forschung/publikationen/linearity-analysis-of-a-40-w-class-g-modulated-microwave-power-amplifier
In this paper, a class-G power amplifier is presented. It consists of a discrete class-G supply modulator, which uses a GaN-HEMT for switching, connected to a 2.65 GHz power amplifier with…
Tunable In-package Impedance Matching for High Power Transistors based on Printed Ceramics
/forschung/publikationen/tunable-in-package-impedance-matching-for-high-power-transistors-based-on-printed-ceramics
This work addresses tunable matching networks (TMN) for in-package integration of RF-power transistors, fabricated on functional thick film layers of Barium-Strontium-Titanate (BST). The deposition…
Frequency-Agile Packaged GaN-HEMT using MIM Thickfilm BST Varactors
/forschung/publikationen/frequency-agile-packaged-gan-hemt-using-mim-thickfilm-bst-varactors
Nowadays wireless communication systems demand flexibility along with electrical efficiency. In this work the highly efficient GaN-HEMT technology is combined with electrically tunable…