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Defect evolution during catastrophic optical damage of diode lasers
/forschung/publikationen/defect-evolution-during-catastrophic-optical-damage-of-diode-lasers
We present an analysis of the catastrophic optical damage effect that is artificially provoked in 808 nm emitting broad area diode lasers by single current pulses. The kinetics of the sudden…
Mode transitions in distributed Bragg reflector semiconductor lasers: experiments, simulations and analysis
/forschung/publikationen/mode-transitions-in-distributed-bragg-reflector-semiconductor-lasers-experiments-simulations-and-analysis
The performance of a multisection distributed Bragg reflector (DBR) semiconductor laser emitting around 1.06 µm is experimentally and theoretically investigated. A thermal-induced change of the…
(Al,Ga)N overgrowth over AlN ridges oriented in [1120] and [1100] direction
/forschung/publikationen/algan-overgrowth-over-aln-ridges-oriented-in-1120-and-1100-direction
Epitaxial lateral overgrowth of 1.5 µm wide AlN ridges with 1.5 µm spacing with AlGaN or AlN was investigated by electron microscopy and cathodoluminescence. Overgrowth of [1100] oriented…
High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching
/forschung/publikationen/high-gain-ultraviolet-photodetectors-based-on-algangan-heterostructures-for-optical-switching
We report on the optoelectronic properties of Al0.25Ga0.75N/GaN-based ultraviolet (UV) photodetectors for the application as a high current, high gain optical switch. Due to an internal gain…
Normally-off High-Voltage p-GaN Gate GaN HFET with Carbon-Doped Buffer
/forschung/publikationen/normally-off-high-voltage-p-gan-gate-gan-hfet-with-carbon-doped-buffer
Normally-off GaN transistors for power applications in p-type GaN gate technology with a modified carbon-doped GaN buffer are presented. A combination of an AlGaN backbarrier with the carbon-doped…
Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses
/forschung/publikationen/frequency-doubled-dbr-tapered-diode-laser-for-direct-pumping-of-tisapphire-lasers-generating-sub-20-fs-pulses
For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved…
Investigation and Reduction of Leakage Current Associated with Gate Encapsulation by SiNx in AlGaN/GaN HFETs
/forschung/publikationen/investigation-and-reduction-of-leakage-current-associated-with-gate-encapsulation-by-sinx-in-algangan-hfets
The leakage current in AlGaN/GaN HFETs associated with gate encapsulation have been found to be sensitive to processing sequence and transistor layout. The main effect of the encapsulation by SiNx is…
The impact of temperature and strain-induced band gap variations on current competition and emitter power in laser bars
/forschung/publikationen/the-impact-of-temperature-and-strain-induced-band-gap-variations-on-current-competition-and-emitter-power-in-laser-bars
We report on current competition and emitter power distributions of unaged 650 nm red-emitting and 980 nm infrared tapered high-power laser bars. We observe a correlation between…
Reliable operation of 976nm High Power DFB Broad Area Diode Lasers with over 60% Power Conversion Efficiency
/forschung/publikationen/reliable-operation-of-976nm-high-power-dfb-broad-area-diode-lasers-with-over-60-power-conversion-efficiency
Diode lasers that deliver high continuous wave optical output powers (> 5W) within a narrow, temperature-stable spectral window are required for many applications. One technical solution is to…
A novel approach to finite-aperture tapered unstable resonator lasers
/forschung/publikationen/a-novel-approach-to-finite-aperture-tapered-unstable-resonator-lasers
A novel concept of a Finite Aperture Tapered Unstable Resonator Laser (FATURL), based on two distributed Bragg reflectors (DBRs) at the rear and front facets with different lateral widths, is…