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Watt-Class Green-Emitting Laser Modules Using Direct Second Harmonic Generation of Diode Laser Radiation
/forschung/publikationen/watt-class-green-emitting-laser-modules-using-direct-second-harmonic-generation-of-diode-laser-radiation
Large-area high-resolution displays, using a flying-spot to create the picture, require light sources in the red, green and blue wavelength range with a high optical output power and nearly…
Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers
/forschung/publikationen/impact-of-light-polarization-on-photoluminescence-intensity-and-quantum-efficiency-in-algan-and-alingan-layers
We analyzed emission intensity, quantum efficiency, and emitted light polarization of c-plane AlGaN and AlInGaN layers (λ=320-350 nm) by temperature dependent photoluminescence. Low indium…
Degenerate four-wave interferences and perfect blaze
/forschung/publikationen/degenerate-four-wave-interferences-and-perfect-blaze
We present a simple model for understanding the perfect blaze for diffraction with echelle gratings. Littrow diffraction at grating profiles with rectangular apexangles implicates two pairs of…
Investigation of GaN-HEMT Based Switches for Hybrid Switching Amplifier Supply-Modulators
/forschung/publikationen/investigation-of-gan-hemt-based-switches-for-hybrid-switching-amplifier-supply-modulators
An investigation of GaN-HEMT based switching stages in hybrid switching amplifiers (HSA) for wide-bandwidth supply modulation of RF power amplifiers is presented. The HSA is designed for maximum 15 V…
Envelope Delta-Sigma-Modulated Voltage-Mode Class-S PA
/forschung/publikationen/envelope-delta-sigma-modulated-voltage-mode-class-s-pa
This paper reports on a digital transmitter architecture for the 450 MHz band using an envelope delta-sigma modulator realized in CMOS and a voltage-mode class-S PA based on GaN MMICs. The class-S PA…
Impact of in-situ TRL Reference Impedance Determination on Parameter Extraction
/forschung/publikationen/impact-of-in-situ-trl-reference-impedance-determination-on-parameter-extraction
This paper investigates the impact of possible parameter extraction errors caused by inaccurate definition of the calibration reference impedance of in-situ multiline TRL. Two calibration sets…
Discrete Tunable RF-Power GaN-BST Transistors
/forschung/publikationen/discrete-tunable-rf-power-gan-bst-transistors
In this work the current status of a novel Barium- Strontium-Titanate (BST) based discrete tunable RF-power GaN-HEMT transistor is presented. A p-design prototype is evaluated for tunable networks in…
Multifinger InP HBT's in Transferred-Substrate Technology for 100 GHz Power Amplifiers
/forschung/publikationen/multifinger-inp-hbts-in-transferred-substrate-technology-for-100-ghz-power-amplifiers
This paper reports results on a transferred-substrate InP heterojunction bipolar-transistor technology for high-frequency power stages. The basic building block is a 2-finger transistor with fT and…
Noise Modeling of GaN HEMT Devices
/forschung/publikationen/noise-modeling-of-gan-hemt-devices
GaN HEMT technology is increasingly used not only for power applications, but also for low-noise amplification. However, systematic assessment of the validity of common noise models like the Pucel…
Tunable RF GaN-Power Transistor Implementing Impedance Matching Networks Based on BST Thick Films
/forschung/publikationen/tunable-rf-gan-power-transistor-implementing-impedance-matching-networks-based-on-bst-thick-films
In this paper, a tunable power amplifier is demonstrated based on a GaN-transistor and a matching network based on Barium-Strontium-Titanate (BST) thick film technology. A single unit transistor cell…