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Optimization of 780 nm DFB diode lasers for high-power narrow linewidth emission
/forschung/publikationen/optimization-of-780-nm-dfb-diode-lasers-for-high-power-narrow-linewidth-emission
We demonstrate the realization of narrow linewidth, high-power ridge waveguide DFB diode lasers emitting near 780 nm. The effects of the coupling coefficient, the laser chip length, and the…
Insitu Raman Setup for Deep Ocean Investigations Applying Two 1000 m Optical Fiber Cables and a 785 nm High Power Diode Laser
/forschung/publikationen/insitu-raman-setup-for-deep-ocean-investigations-applying-two-1000-m-optical-fiber-cables-and-a-785-nm-high-power-diode-laser
A laboratory Raman-set-up is used to demonstrate the feasibility of deep ocean measurements using 1000 m long low OH optical fibres for the excitation of the substances under study and the…
Single- and double-heterostructure GaN-HEMTs devices for power switching applications
/forschung/publikationen/single-and-double-heterostructure-gan-hemts-devices-for-power-switching-applications
This paper reports on a detailed characterization of single- (SH) and double-heterostructure (DH) GaNbased HEMTs developed for the employment on power switching applications. DC, pulsed and breakdown…
Device breakdown and dynamic effects in GaN power switching devices: Dependencies on material properties and device design
/forschung/publikationen/device-breakdown-and-dynamic-effects-in-gan-power-switching-devices-dependencies-on-material-properties-and-device-design
High voltage GaN based transistors already showed promising device properties which makes them very attractive for future highly efficient power switching application. To further optimize device…
High-power low-divergence 1060 nm photonic crystal laser diodes based on quantum dots
/forschung/publikationen/high-power-low-divergence-1060-nm-photonic-crystal-laser-diodes-based-on-quantum-dots
GaAs-based photonic band crystal diode lasers with low vertical divergence and high output power have been designed and realised with a quantum dot active area at a wavelength of 1060 nm. Broad…
Hochrobuste rauscharme Verstärker in GaN-HEMT-Technologie
/forschung/forschungsnews/hochrobuste-rauscharme-verstaerker-in-gan-hemt-technologie
Die BTU Cottbus-Senftenberg und das FBH haben ein neues Konzept zum Schutz von rauscharmen Verstärkern vor zu hohen Eingangsleistungen entwickelt.
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/forschung/publikationen/threshold-voltage-engineering-in-gan-based-hfets-a-systematic-study-with-the-threshold-voltage-reaching-more-than-2-v
One of the key challenges for the adoption of gallium nitride (GaN)-based heterostructure field effect transistors (HFETs) in power-switching applications is obtaining enhancement mode behavior. A…
Tunable high-power narrow-spectrum external-cavity diode laser at 675 nm as a pump source for UV generation
/forschung/publikationen/tunable-high-power-narrow-spectrum-external-cavity-diode-laser-at-675nbspnm-as-a-pump-source-for-uv-generation
High-power narrow-spectrum diode laser systems based on tapered gain media in an external cavity are demonstrated at 675 nm. Two 2 mm long amplifiers are used, one with a 500 µm long…
Nearly Diffraction Limited Tapered Lasers at 675 nm with 1 W Output Power and Conversion Efficiencies above 30%
/forschung/publikationen/nearly-diffraction-limited-tapered-lasers-at-675nbspnm-with-1nbspw-output-power-and-conversion-efficiencies-above-30
High brightness, highly efficient tapered lasers emitting around 675 nm have been developed. The devices have a 500 µm long straight section and a 1500 µm long tapered section with a…
Improving the modulation efficiency of high-power distributed Bragg reflector tapered diode lasers
/forschung/publikationen/improving-the-modulation-efficiency-of-high-power-distributed-bragg-reflector-tapered-diode-lasers
Different measures to improve the modulation efficiency of a distributed Bragg reflector tapered diode laser emitting at 1060 nm were investigated. Due to the 6-mm long cavity, the device…