Suche
Regeln für die Suche
- Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
- Maximal 200 Zeichen insgesamt
- Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
- UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
- Alle Suchwörter werden zu Kleinschreibung konvertiert
Barrierensystem aus nanobeschichteten Mikrosieben und UV-Strahlungsquelle für die Wassertechnik
/forschung/publikationen/barrierensystem-aus-nanobeschichteten-mikrosieben-und-uv-strahlungsquelle-fuer-die-wassertechnik
Nanotechnik ist eines der chancenreichsten und Wassertechnik eines der wichtigsten Schlüssel- und Zukunftsthemen weltweit. Die etablierten Verfahren und Produkte der Wassertechnik bieten nur noch…
Low Noise 24 GHz CMOS Receiver for FMCW Based Wireless Local Positioning
/forschung/publikationen/low-noise-24-ghz-cmos-receiver-for-fmcw-based-wireless-local-positioning
This work demonstrates a fully integrated 24 GHz CMOS receiver targeted for low power and compact wireless sensor nodes utilizing FMCW radar for wireless local positioning. The receiver incorporates…
The Modal Content of High Power Broad Area Diode Lasers with Integrated Distributed Feedback Gratings
/forschung/publikationen/the-modal-content-of-high-power-broad-area-diode-lasers-with-integrated-distributed-feedback-gratings
The spectral width of high power DFB-BA lasers is shown to be limited at low powers (1-4W) by higher order vertical modes and at high powers (4-11W) by increasing numbers of thermally guided lateral…
Progress in efficient, high-brightness red-emitting tapered diode lasers for display applications
/forschung/publikationen/progress-in-efficient-high-brightness-red-emitting-tapered-diode-lasers-for-display-applications
High-brightness tapered diode lasers are an ideal high-luminance light source for display applications, because these devices have a high optical power of up to 0.7 W in the visible range with a…
56W optical output power at 970nm from a truncated tapered semiconductor optical amplifier
/forschung/publikationen/56w-optical-output-power-at-970nm-from-a-truncated-tapered-semiconductor-optical-amplifier
A truncated tapered semiconductor amplifier in a master oscillator-power amplifier configuration is shown to deliver 56W output power at 970nm under quasi-cw conditions, with reasonable beam quality…
Polarization dependent study of gain anisotropy in semipolar InGaN lasers
/forschung/publikationen/polarization-dependent-study-of-gain-anisotropy-in-semipolar-ingan-lasers
The optical gain of single quantum well laser structures on semipolar (1122)-GaN in dependence of the optical polarization and the resonator orientation has been studied by variable stripe length…
High-power edge-emitting laser diode with narrow vertical beam divergence
/forschung/publikationen/high-power-edge-emitting-laser-diode-with-narrow-vertical-beam-divergence
10.5 W pulsed optical power with ultra-narrow vertical beam divergence (full width at full maximum ~1.1°) is achieved at 20 A pulsed current in a 1060 nm laser diode with as-cleaved…
High Power Diode Lasers with Very Narrow Vertical Beam Divergence
/forschung/publikationen/high-power-diode-lasers-with-very-narrow-vertical-beam-divergence
Efficient, high power diode lasers with an extremely low vertical divergence angle (termed here ELOD designs) are produced when super large optical waveguide designs are combined with low index…
Modelocked semiconductor laser system with pulse picking for variable repetition rate
/forschung/publikationen/modelocked-semiconductor-laser-system-with-pulse-picking-for-variable-repetition-rate
The generation of picosecond pulses from a hybrid modelocked semiconductor master oscillator power amplifier system with a repetition rate as low as 340 kHz is presented. The fundamental…
Normally-off GaN Transistors and Diodes for Power Applications
/forschung/publikationen/normally-off-gan-transistors-and-diodes-for-power-applications
Different normally-off concepts for high voltage GaN power switching transistors are compared and benchmarked. For full GaN-based power electronics, a lateral GaN Schottky-barrier diode with low…