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Picosecond pulses with more than 60 W peak power generated by a singlestage all-semiconductor master-oscillator power-amplifier system
/forschung/publikationen/picosecond-pulses-with-more-than-60nbspw-peak-power-generated-by-a-singlestage-all-semiconductor-master-oscillator-power-amplifier-system
Spectrally stabilized laser pulses with a duration of 65ps and a peak power of 3.6W have been generated by a DBR laser and subsequently amplified in a tapered amplifier to a peak power of 64W.
Efficiency-optimized 973nm high power broad area DFB lasers with overgrown aluminium-free gratings for peak power conversion of 63%
/forschung/publikationen/efficiency-optimized-973nm-high-power-broad-area-dfb-lasers-with-overgrown-aluminium-free-gratings-for-peak-power-conversion-of-63
High power 973nm DFB-broad area lasers with record power conversion efficiency of 63% and peak power >12W are demonstrated for the first time, based on thin, low strength aluminium-free overgrown…
Study of excess carrier dynamics in polar, semi-polar, and nonpolar InGaN epilayers and QWs
/forschung/publikationen/study-of-excess-carrier-dynamics-in-polar-semi-polar-and-nonpolar-ingan-epilayers-and-qws
We studied carrier recombination and diffusion inGaN/sapphire templates, (In,Ga)N layers, and (In,Ga)Nquantum well structures oriented along the polar [0001],semi-polar [11-22], and non-polar [11-20]…
Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs
/forschung/publikationen/comparative-study-of-buffer-designs-for-high-breakdown-voltage-algangan-hfets
A comparison of different epilayer concepts to achieve high breakdown voltage AlGaN-GaN HFETs is presented. A double heterostructure with a low Al-content Al0.05Ga0.95N back-barrier as well as a…
Colliding pulse mode-locked lasers as light sources for single-shot holography
/forschung/publikationen/colliding-pulse-mode-locked-lasers-as-light-sources-for-single-shot-holography-1
So far, all concepts for three dimensional biomedical imaging rely on scanning in at least one dimension. Single-shot holography [1], in contrast, stores three-dimensional information encoded in an…
Optimisation of 660 nm high-power tapered diode lasers
/forschung/publikationen/optimisation-of-660nbspnm-high-power-tapered-diode-lasers
Tapered diode lasers in the red spectral range with nearly diffraction-limited output are prospective light sources for display applications and analytic methods such as fluorescence microscopy. The…
Colliding pulse mode-locked lasers as light sources for single-shot holography
/forschung/publikationen/colliding-pulse-mode-locked-lasers-as-light-sources-for-single-shot-holography
So far, concepts for three dimensional biomedical imaging rely on scanning in at least one dimension. Single-shot holography1, in contrast, stores three-dimensional information encoded in an…
GaInN quantum well design and measurement conditions affecting the emission energy S-shape
/forschung/publikationen/gainn-quantum-well-design-and-measurement-conditions-affecting-the-emission-energy-s-shape
Polarization fields and charge carrier localization are the dominant factors defining the radiative recombination processes in the quantum wells of most AlGaInN-based optoelectronic devices. Both…
DBR laser diodes emitting near 1064 nm with a narrow intrinsic linewidth of 2 kHz
/forschung/publikationen/dbr-laser-diodes-emitting-near-1064nbspnm-with-a-narrow-intrinsic-linewidth-of-2nbspkhz
We report on the realization of distributed Bragg reflector laser diodes emitting near a wavelength of 1064 nm in a single longitudinal mode with high output power and kHz-level intrinsic…
1W narrow linewidth semiconductor based laser module emitting near 1064 nm for the use in coherent optical communication in space
/forschung/publikationen/1w-narrow-linewidth-semiconductor-based-laser-module-emitting-near-1064nbspnm-for-the-use-in-coherent-optical-communication-in-space
We report on the realization of a semiconductor laser based master oscillator power amplifier (MOPA) system with high output power and narrow linewidth. The system features an output power of more…