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A voltage-mode class-S power amplifier for the 450 MHz band
/forschung/publikationen/a-voltage-mode-class-s-power-amplifier-for-the-450-mhz-band
This paper reports on a novel voltage-mode class-S power amplifier for the 450 MHz band, based on GaN-HEMT monolithic microwave integrated circuits (MMICs). It achieves a peak output power of…
Blue and green-emitting laser diodes
/forschung/publikationen/blue-and-green-emitting-laser-diodes
About this book: The three volumes VIII/1A, B, C document the state of the art of "Laser Physics and Applications". Scientific trends and related technological aspects are considered by…
Load-Pull Investigation of a High-Voltage RF-Power GaN-HEMT Technology in Supply Modulated Applications
/forschung/publikationen/load-pull-investigation-of-a-high-voltage-rf-power-gan-hemt-technology-in-supply-modulated-applications
In this paper the potential and limitations of using a high-voltage GaN-HEMT RF-power technology with supply modulation for increased back-off efficiency is investigated. Based on extensive on-wafer…
Diode lasers in the near infra-red spectral range
/forschung/publikationen/diode-lasers-in-the-near-infra-red-spectral-range
About this book: The three volumes VIII/1A, B, C document the state of the art of "Laser Physics and Applications". Scientific trends and related technological aspects are considered by…
Standard characterization methods
/forschung/publikationen/standard-characterization-methods
About this book: The three volumes VIII/1A, B, C document the state of the art of "Laser Physics and Applications". Scientific trends and related technological aspects are considered by…
Reliability and life time
/forschung/publikationen/reliability-and-life-time
About this book: The three volumes VIII/1A, B, C document the state of the art of "Laser Physics and Applications". Scientific trends and related technological aspects are considered by…
Defect analysis
/forschung/publikationen/defect-analysis
About this book: The three volumes VIII/1A, B, C document the state of the art of "Laser Physics and Applications". Scientific trends and related technological aspects are considered by…
20 000 h reliable operation of 100 µm stripe width 650 nm broad area lasers at more than 1.1 W output power
/forschung/publikationen/20nbsp000nbsph-reliable-operation-of-100nbspum-stripe-width-650nbspnm-broad-area-lasers-at-more-than-11nbspw-output-power
Reliability tests for highly efficient high-power 650 nm broad area diode lasers will be presented. The devices have a 5 nm thick single GaInP quantum well as an active layer, which is…
Enhancement of channel conductivity in AlGaN/GaN heterostructure field effect transistors by AlGaN:Si back barrier
/forschung/publikationen/enhancement-of-channel-conductivity-in-algangan-heterostructure-field-effect-transistors-by-algansi-back-barrier
Heterostructure field effect transistors with three AlGaN/GaN interfaces were designed and investigated. A Si-doped AlGaN back barrier was used to compensate for the reduction of channel conductivity…
Electrical and EDX-analysis of CF4 and Ar plasma treated AlGaN/GaN HEMTs
/forschung/publikationen/electrical-and-edx-analysis-of-cf4-and-ar-plasma-treated-algangan-hemts
In this paper we have investigated the effect of CF4 plasma treatment on AlGaN/GaN HEMTs and compared it with Ar plasma treated devices. We have investigated the electrical characteristics of the…