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Degradation Mechanism of GaN HEMTs in Dependence on Buffer Quality and Gate Technology
/forschung/publikationen/degradation-mechanism-of-gan-hemts-in-dependence-on-buffer-quality-and-gate-technology
AlGaN/GaN HEMTs with different GaN buffer thicknesses on n-type SiC substrates have been analyzed with respect to their degradation mode during drain voltage step stressing tests. The analysis was…
Compact ps-pulse laser source with free adjustable repetition rate and nJ pulse energy on microbench
/forschung/publikationen/compact-ps-pulse-laser-source-with-free-adjustable-repetition-rate-and-nj-pulse-energy-on-microbench
A new compact picosecond light source is presented. It consists of a master oscillator, an ultra fast pulse picker element and integrated high-frequency electronics arranged on a micro bench with a…
Passively mode-locked two section laser diode with intracavity dispersion control
/forschung/publikationen/passively-mode-locked-two-section-laser-diode-with-intracavity-dispersion-control
Ultrashort laser pulses with a duration of 200 fs were obtained from a passively modelocked external cavity diode laser at 830 nm emission wavelength. By intracavity dispersion control the…
High average power Nd:YVO4 regenerative amplifier seeded by a gain switched diode laser
/forschung/publikationen/high-average-power-ndyvo4-regenerative-amplifier-seeded-by-a-gain-switched-diode-laser
We report on a Nd:YVO4 regenerative amplifier (RA), end pumped by 888 nm-diode lasers. The output power was about 46W at repetition rates from 150 to 833kHz with an M2-factor of 1.2. The…
Wigner distribution function of DBR tapered diode lasers
/forschung/publikationen/wigner-distribution-function-of-dbr-tapered-diode-lasers
In this paper, we utilize the concept of the Wigner distribution function (WDF) on distributed-Bragg-reflector taper lasers (DBR-TPL). The WDF allows the derivation of the phase and the intensity…
Variation of refractive index step of 635 nm ridge waveguide lasers for optimized index guiding
/forschung/publikationen/variation-of-refractive-index-step-of-635-nm-ridge-waveguide-lasers-for-optimized-index-guiding
We report on experimental and theoretical investigations concerning the influence of the ridge etching depth and the corresponding effective refractive index step on the electro-optical properties of…
Thermal Optimization of the Second Harmonic Generation with Tapered Diode Lasers
/forschung/publikationen/thermal-optimization-of-the-second-harmonic-generation-with-tapered-diode-lasers
Recently, hybrid integrated compact laser sources with high optical output powers in the visible range around 488 nm were demonstrated using tapered diode lasers. This was done by single-pass second…
670 nm nearly diffraction limited tapered lasers with more than 30% conversion efficiency and 1 W cw and 3 W pulsed output power
/forschung/publikationen/670nbspnm-nearly-diffraction-limited-tapered-lasers-with-more-than-30-conversion-efficiency-and-1nbspw-cw-and-3nbspw-pulsed-output-power
Highly efficient 670 nm-tapered lasers with a vertical divergence of 31° (FWHM) will be presented. The devices are based on a GaInP single quantum well embedded in AlGaInP waveguide layers.…
Tilted Wave Lasers: A Way to High Brightness Sources of Light
/forschung/publikationen/tilted-wave-lasers-a-way-to-high-brightness-sources-of-light
Semiconductor laser diodes are conventionally based on a relatively thin waveguide structure grown epitaxially on a thick single crystalline substrate, wherein the latter serves as a medium for…
GaN-based Schottky diodes with low onset voltage and strong reverse blocking
/forschung/publikationen/gan-based-schottky-diodes-with-low-onset-voltage-and-strong-reverse-blocking
GaN-based Schottky diodes with low onset voltage and strong reverse blocking E. Bahat-Treidel, O. Hilt, R. Zhytnytska, E. Cho, J. Würfl and G. Tränkle …