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Study of excess carrier dynamics in polar, semi-polar, and nonpolar InGaN epilayers and QWs
/forschung/publikationen/study-of-excess-carrier-dynamics-in-polar-semi-polar-and-nonpolar-ingan-epilayers-and-qws
We studied carrier recombination and diffusion inGaN/sapphire templates, (In,Ga)N layers, and (In,Ga)Nquantum well structures oriented along the polar [0001],semi-polar [11-22], and non-polar [11-20]…
Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs
/forschung/publikationen/comparative-study-of-buffer-designs-for-high-breakdown-voltage-algangan-hfets
A comparison of different epilayer concepts to achieve high breakdown voltage AlGaN-GaN HFETs is presented. A double heterostructure with a low Al-content Al0.05Ga0.95N back-barrier as well as a…
Colliding pulse mode-locked lasers as light sources for single-shot holography
/forschung/publikationen/colliding-pulse-mode-locked-lasers-as-light-sources-for-single-shot-holography-1
So far, all concepts for three dimensional biomedical imaging rely on scanning in at least one dimension. Single-shot holography [1], in contrast, stores three-dimensional information encoded in an…
Optimisation of 660 nm high-power tapered diode lasers
/forschung/publikationen/optimisation-of-660nbspnm-high-power-tapered-diode-lasers
Tapered diode lasers in the red spectral range with nearly diffraction-limited output are prospective light sources for display applications and analytic methods such as fluorescence microscopy. The…
Colliding pulse mode-locked lasers as light sources for single-shot holography
/forschung/publikationen/colliding-pulse-mode-locked-lasers-as-light-sources-for-single-shot-holography
So far, concepts for three dimensional biomedical imaging rely on scanning in at least one dimension. Single-shot holography1, in contrast, stores three-dimensional information encoded in an…
GaInN quantum well design and measurement conditions affecting the emission energy S-shape
/forschung/publikationen/gainn-quantum-well-design-and-measurement-conditions-affecting-the-emission-energy-s-shape
Polarization fields and charge carrier localization are the dominant factors defining the radiative recombination processes in the quantum wells of most AlGaInN-based optoelectronic devices. Both…
DBR laser diodes emitting near 1064 nm with a narrow intrinsic linewidth of 2 kHz
/forschung/publikationen/dbr-laser-diodes-emitting-near-1064nbspnm-with-a-narrow-intrinsic-linewidth-of-2nbspkhz
We report on the realization of distributed Bragg reflector laser diodes emitting near a wavelength of 1064 nm in a single longitudinal mode with high output power and kHz-level intrinsic…
1W narrow linewidth semiconductor based laser module emitting near 1064 nm for the use in coherent optical communication in space
/forschung/publikationen/1w-narrow-linewidth-semiconductor-based-laser-module-emitting-near-1064nbspnm-for-the-use-in-coherent-optical-communication-in-space
We report on the realization of a semiconductor laser based master oscillator power amplifier (MOPA) system with high output power and narrow linewidth. The system features an output power of more…
Micro-integrated ECDLs for precision spectroscopy in space
/forschung/publikationen/micro-integrated-ecdls-for-precision-spectroscopy-in-space
We present a micro-integrated, high power, narrow linewidth extended cavity diode laser (ECDL) for precision quantum optics experiments at 780 nm onboard a sounding rocket. Although…
On the optical polarization properties of semipolar InGaN quantum wells
/forschung/publikationen/on-the-optical-polarization-properties-of-semipolar-ingan-quantum-wells
Polarized photoluminescence of strained quantum wells grown on c-plane, semipolar (1012), (1122), (1011), (2021) planes, and nonpolar GaN substrates was studied experimentally and in theory. The…