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Biological effects of nitric oxide generated by an atmospheric pressure gas-plasma on human skin cells
/forschung/publikationen/biological-effects-of-nitric-oxide-generated-by-an-atmospheric-pressure-gas-plasma-on-human-skin-cells
Physical plasmas which contain a mixture of different radicals, charged species and UV-radiation, have recently found entry in various medical applications. Though first clinical trials are underway…
Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate
/forschung/publikationen/uniformity-of-the-wafer-surface-temperature-during-movpe-growth-of-gan-based-laser-diode-structures-on-gan-and-sapphire-substrate
Wafer bowing has a strong impact on the wavelength homogeneity of InGaN based light emitters due to the strong temperature dependence of the In incorporation.Using in-situ curvature measurements and…
Characterization and optimization of 2-step MOVPE growth for single-mode DFB or DBR laser diodes
/forschung/publikationen/characterization-and-optimization-of-2-step-movpe-growth-for-single-mode-dfb-or-dbr-laser-diodes
We have studied the MOVPE regrowth of AlGaAs over a grating for GaAs-based laser diodes with an internal wavelength stabilisation. Growth temperature and aluminium concentration in the regrown layers…
Growth and characterization of heavily selenium doped GaAs using MOVPE
/forschung/publikationen/growth-and-characterization-of-heavily-selenium-doped-gaas-using-movpe
High n-type doping in GaAs using silicon suffers from its amphoteric character and free carrier concentrations are practically limited to 3x1018cm-3. Se as group VI element should not be amphoteric…
Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements
/forschung/publikationen/comparative-study-of-algangan-hemts-robustness-versus-buffer-design-variations-by-applying-electroluminescence-and-electrical-measurements
By means of step stressing tests on AlGaN/GaN HEMTs the robustness properties of devices fabricated on wafers with different buffer designs have been compared to each other (standard UID GaN buffer…
16 W output power by high-efficient spectral beam combining of DBR-tapered diode lasers
/forschung/publikationen/16-w-output-power-by-high-efficient-spectral-beam-combining-of-dbr-tapered-diode-lasers
Up to 16 W output power has been obtained using spectral beam combining of two 1063 nm DBR-tapered diode lasers. Using a reflecting volume Bragg grating, a combining efficiency as high as…
Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser
/forschung/publikationen/pulse-repetition-rate-up-to-92nbspghz-or-pulse-duration-shorter-than-110nbspfs-from-a-mode-locked-semiconductor-disk-laser
A semiconductor disk laser based on an InGaAs/AlGaAs quantum-well gain medium was mode-locked by a fast semiconductor saturable absorber mirror. By high-order harmonic mode-locking a 92 GHz…
Growth of AlGaN and AlN on patterned AlN/sapphire templates
/forschung/publikationen/growth-of-algan-and-aln-on-patterned-alnsapphire-templates
Maskless epitaxial overgrowth of AlGaN on structured AlN templates was performed and the impact of stripe orientation on the lateral growth of AlGaN was studied. AlN/sapphire templates were patterned…
Optical polarization of UV-A and UV-B (In)(Al)GaN multiple quantum well light emitting diodes
/forschung/publikationen/optical-polarization-of-uv-a-and-uv-b-inalgan-multiple-quantum-well-light-emitting-diodes
The optical polarization of the in-plane emission of c-plane oriented (In)(Al)GaN multiple quantum well light emitting diodes in the spectral range from 288 nm to 386 nm has been investigated by…
Efficient high-power frequency doubling of distributed Bragg reflector tapered laser radiation in a periodically poled MgO-doped lithium niobate planar waveguide
/forschung/publikationen/efficient-high-power-frequency-doubling-of-distributed-bragg-reflector-tapered-laser-radiation-in-a-periodically-poled-mgo-doped-lithium-niobate-planar-waveguide
We report on efficient single-pass, high-power second-harmonic generation in a periodically poled MgO-doped LiNbO3 planar waveguide using a distributed Bragg reflector tapered diode laser as a pump…