Defect evolution during catastrophic optical damage of diode lasers
M. Hempel1, F. La Mattina2, J.W. Tomm1, U. Zeimer3, R. Broennimann2 and T. Elsaesser1
Published in:
Semicond. Sci. Technol., vol. 26, no. 075020 (2011).
Abstract:
We present an analysis of the catastrophic optical damage effect that is artificially provoked in 808 nm emitting broad area diode lasers by single current pulses. The kinetics of the sudden degradation process, monitored with a nanosecond temporal resolution, is linked to the damage pattern observed. This involves in situ tracing of emission power and hot-spot motion within the cavity as well as the verification of the resulting defects by defect spectroscopy and cathodoluminescence mapping. A complementary model is presented which explains the shape of the observed defect pattern. The combination of unidirectional energy transfer to defects by laser light within the laser cavity, spatially isotropic defect growth, and the presence of shadowing effects explain the complex damage pattern observed in the gain material, including effects of defect branching. The study is made with standard industrial devices making the findings directly applicable for device testing and performance improvements.
1 Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2 A, 12489 Berlin, Germany
2 EMPA Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, 8600 Dübendorf, Switzerland
3 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
© 2011 IOP Publishing Ltd. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IOP Publishing Ltd.
Full version in pdf-format.