The impact of temperature and strain-induced band gap variations on current competition and emitter power in laser bars
C.K. Amuzuvi1, S. Bull1, J.W. Tomm2, J. Nagle3, B. Sumpf4, G. Erbert4, N. Michel5, M. Krakowski5, and E.C. Larkins1
Published in:
Appl. Phys. Lett., vol. 98, no. 241108 (2011).
Abstract:
We report on current competition and emitter power distributions of unaged 650 nm red-emitting and 980 nm infrared tapered high-power laser bars. We observe a correlation between temperature and packaging-induced strain with respect to the emitter output power. A frown-shaped profile of the output power distribution is seen when the temperatures of the emitters near the center of the bar increase compared to those at the edges of the bar. The effect of temperature is found to dominate that of strain and therefore determine the output power distribution across the bar.
1 Photonic and Radio Frequency Engineering Group (PRFEG), Electrical Systems and Optics Research Division, Faculty of Engineering, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
2 Max-Born-Institut, Max-Born-Str. 2A, 12489 Berlin, Germany
3 Thales Research and Technology, Route Départementale 128, 91767 Palaiseau Cedex, France
4 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
5 Alcatel-Thales III-V Lab, Route Départementale 128, 91767 Palaiseau Cedex, France
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