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High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching

M. Martens1, J. Schlegel1, P. Vogt1, F. Brunner2, R. Lossy2, J. Würfl2, M. Weyers2, and M. Kneissl1,2

Published in:

Appl. Phys. Lett., vol. 98, no. 211114 (2011).

Abstract:

We report on the optoelectronic properties of Al0.25Ga0.75N/GaN-based ultraviolet (UV) photodetectors for the application as a high current, high gain optical switch. Due to an internal gain mechanism combined with the high conductivity of the two-dimensional electron gas at the heterostructure interface, photocurrents in the milliampere-range were obtained with UV illumination. By employing a mesa structure design with meander geometry very low dark currents below 50 nA up to a bias voltage of 100 V were achieved. Optical switching with an on/off-current-ratio of five orders of magnitude was demonstrated. The response time was determined to be 6 ms and persistent photoconductivity was observed. The photodetector is visible-blind with a cut-off wavelength of 365 nm according to the band gap energy of the GaN absorption layer. A high responsivity with a maximum of 70 A/mW at 312 nm and 100 V bias voltage was demonstrated.

1 Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, EW 6-1, 10623 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Keywords:

aluminium compounds, dark conductivity, energy gap, gallium compounds, III-V semiconductors, optical switches, photoconductivity, photodetectors, two-dimensional electron gas, ultraviolet detectors, wide band gap semiconductors.

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