Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses
A. Müller1, O.B. Jensen1, A. Unterhuber2, T. Le2, A. Stingl2, K.-H. Hasler3, B. Sumpf3, G. Erbert3, P.E. Andersen1, and P.M. Petersen1
Published in:
Opt. Express, vol. 19, no. 13, pp. 12156-12163 (2011).
Abstract:
For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.
1 Department of Photonics Engineering, Technical University of Denmark, Frederiksborgvej 399, 4000 Roskilde, Denmark
2 Femtolasers Produktions GmbH, Fernkorngasse 10, 1100 Vienna, Austria
3 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
OCIS codes:
(140.2020) Diode lasers; (140.5560) Pumping; (140.3590) Lasers, titanium; (140.7090) Ultrafast lasers.
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