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(Al,Ga)N overgrowth over AlN ridges oriented in [1120] and [1100] direction
/forschung/publikationen/algan-overgrowth-over-aln-ridges-oriented-in-1120-and-1100-direction
Epitaxial lateral overgrowth of 1.5 µm wide AlN ridges with 1.5 µm spacing with AlGaN or AlN was investigated by electron microscopy and cathodoluminescence. Overgrowth of [1100] oriented…
High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching
/forschung/publikationen/high-gain-ultraviolet-photodetectors-based-on-algangan-heterostructures-for-optical-switching
We report on the optoelectronic properties of Al0.25Ga0.75N/GaN-based ultraviolet (UV) photodetectors for the application as a high current, high gain optical switch. Due to an internal gain…
Normally-off High-Voltage p-GaN Gate GaN HFET with Carbon-Doped Buffer
/forschung/publikationen/normally-off-high-voltage-p-gan-gate-gan-hfet-with-carbon-doped-buffer
Normally-off GaN transistors for power applications in p-type GaN gate technology with a modified carbon-doped GaN buffer are presented. A combination of an AlGaN backbarrier with the carbon-doped…
Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses
/forschung/publikationen/frequency-doubled-dbr-tapered-diode-laser-for-direct-pumping-of-tisapphire-lasers-generating-sub-20-fs-pulses
For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved…
Investigation and Reduction of Leakage Current Associated with Gate Encapsulation by SiNx in AlGaN/GaN HFETs
/forschung/publikationen/investigation-and-reduction-of-leakage-current-associated-with-gate-encapsulation-by-sinx-in-algangan-hfets
The leakage current in AlGaN/GaN HFETs associated with gate encapsulation have been found to be sensitive to processing sequence and transistor layout. The main effect of the encapsulation by SiNx is…
The impact of temperature and strain-induced band gap variations on current competition and emitter power in laser bars
/forschung/publikationen/the-impact-of-temperature-and-strain-induced-band-gap-variations-on-current-competition-and-emitter-power-in-laser-bars
We report on current competition and emitter power distributions of unaged 650 nm red-emitting and 980 nm infrared tapered high-power laser bars. We observe a correlation between…
Reliable operation of 976nm High Power DFB Broad Area Diode Lasers with over 60% Power Conversion Efficiency
/forschung/publikationen/reliable-operation-of-976nm-high-power-dfb-broad-area-diode-lasers-with-over-60-power-conversion-efficiency
Diode lasers that deliver high continuous wave optical output powers (> 5W) within a narrow, temperature-stable spectral window are required for many applications. One technical solution is to…
A novel approach to finite-aperture tapered unstable resonator lasers
/forschung/publikationen/a-novel-approach-to-finite-aperture-tapered-unstable-resonator-lasers
A novel concept of a Finite Aperture Tapered Unstable Resonator Laser (FATURL), based on two distributed Bragg reflectors (DBRs) at the rear and front facets with different lateral widths, is…
Degradation Mechanism of GaN HEMTs in Dependence on Buffer Quality and Gate Technology
/forschung/publikationen/degradation-mechanism-of-gan-hemts-in-dependence-on-buffer-quality-and-gate-technology
AlGaN/GaN HEMTs with different GaN buffer thicknesses on n-type SiC substrates have been analyzed with respect to their degradation mode during drain voltage step stressing tests. The analysis was…
Compact ps-pulse laser source with free adjustable repetition rate and nJ pulse energy on microbench
/forschung/publikationen/compact-ps-pulse-laser-source-with-free-adjustable-repetition-rate-and-nj-pulse-energy-on-microbench
A new compact picosecond light source is presented. It consists of a master oscillator, an ultra fast pulse picker element and integrated high-frequency electronics arranged on a micro bench with a…