Suche

Regeln für die Suche

  • Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
  • Maximal 200 Zeichen insgesamt
  • Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
  • UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
  • Alle Suchwörter werden zu Kleinschreibung konvertiert
Suchergebnisse 4341 bis 4350 von 5334

Micro-integrated ECDLs for precision spectroscopy in space

/forschung/publikationen/micro-integrated-ecdls-for-precision-spectroscopy-in-space

We present a micro-integrated, high power, narrow linewidth extended cavity diode laser (ECDL) for precision quantum optics experiments at 780 nm onboard a sounding rocket. Although…

On the optical polarization properties of semipolar InGaN quantum wells

/forschung/publikationen/on-the-optical-polarization-properties-of-semipolar-ingan-quantum-wells

Polarized photoluminescence of strained quantum wells grown on c-plane, semipolar (1012), (1122), (1011), (2021) planes, and nonpolar GaN substrates was studied experimentally and in theory. The…

A voltage-mode class-S power amplifier for the 450 MHz band

/forschung/publikationen/a-voltage-mode-class-s-power-amplifier-for-the-450-mhz-band

This paper reports on a novel voltage-mode class-S power amplifier for the 450 MHz band, based on GaN-HEMT monolithic microwave integrated circuits (MMICs). It achieves a peak output power of…

Blue and green-emitting laser diodes

/forschung/publikationen/blue-and-green-emitting-laser-diodes

About this book: The three volumes VIII/1A, B, C document the state of the art of "Laser Physics and Applications". Scientific trends and related technological aspects are considered by…

Load-Pull Investigation of a High-Voltage RF-Power GaN-HEMT Technology in Supply Modulated Applications

/forschung/publikationen/load-pull-investigation-of-a-high-voltage-rf-power-gan-hemt-technology-in-supply-modulated-applications

In this paper the potential and limitations of using a high-voltage GaN-HEMT RF-power technology with supply modulation for increased back-off efficiency is investigated. Based on extensive on-wafer…

Diode lasers in the near infra-red spectral range

/forschung/publikationen/diode-lasers-in-the-near-infra-red-spectral-range

About this book: The three volumes VIII/1A, B, C document the state of the art of "Laser Physics and Applications". Scientific trends and related technological aspects are considered by…

Standard characterization methods

/forschung/publikationen/standard-characterization-methods

About this book: The three volumes VIII/1A, B, C document the state of the art of "Laser Physics and Applications". Scientific trends and related technological aspects are considered by…

Reliability and life time

/forschung/publikationen/reliability-and-life-time

About this book: The three volumes VIII/1A, B, C document the state of the art of "Laser Physics and Applications". Scientific trends and related technological aspects are considered by…

Defect analysis

/forschung/publikationen/defect-analysis

About this book: The three volumes VIII/1A, B, C document the state of the art of "Laser Physics and Applications". Scientific trends and related technological aspects are considered by…

20 000 h reliable operation of 100 µm stripe width 650 nm broad area lasers at more than 1.1 W output power

/forschung/publikationen/20nbsp000nbsph-reliable-operation-of-100nbspum-stripe-width-650nbspnm-broad-area-lasers-at-more-than-11nbspw-output-power

Reliability tests for highly efficient high-power 650 nm broad area diode lasers will be presented. The devices have a 5 nm thick single GaInP quantum well as an active layer, which is…