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Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs by Strain Engineering Design
/forschung/publikationen/performance-enhancement-of-flip-chip-packaged-algangan-hemts-by-strain-engineering-design
The piezoelectric polarization of the AlGaN/GaN high-electron-mobility transistors (HEMTs) is strongly related to the strain state in the active area. Therefore, understanding the strain behavior…
Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors
/forschung/publikationen/effect-of-barrier-recess-on-transport-and-electrostatic-interface-properties-of-gan-based-normally-off-and-normally-on-metal-oxide-semiconductor-heterostructure-field-effect-transistors
We perform a comprehensive electrical transport and physical characterization of metal oxide semiconductor heterostructure field effect transistors with ZrO2 gate dielectrics, having partially…
Electronic properties of Si-doped AlxGa1-xN with aluminum mole above 80%
/forschung/publikationen/electronic-properties-of-si-doped-alxga1-xn-with-aluminum-mole-above-80
The dependence of the activation energy as well as the energetic levels of the neutral charge state the DX center of the Si donor in AlxGa1-xN:Si samples on aluminum content and SiH4/III ratio…
Miniaturised master-oscillator poweramplifier emitting a single longitudinal mode with more than 300 mW at 647 nm
/forschung/publikationen/miniaturised-master-oscillator-poweramplifier-emitting-a-single-longitudinal-mode-with-more-than-300-mw-at-647-nm
A miniaturised red-emitting master-oscillator power-amplifier (MOPA) was developed. The MOPA emits a single longitudinal mode with a linewidth below 10 MHz and an optical output power of more…
Characterization of Single-Shot Large-Signal Phenomena Using High-Speed Oscilloscopes
/forschung/publikationen/characterization-of-single-shot-large-signal-phenomena-using-high-speed-oscilloscopes
The use of fast real-time oscilloscopes allows the recording of single transient events at GHz frequencies in the large signal operation of electronic components. With sampling rates over…
Novel Approach to Trapping Effect Modeling Based on Chalmers Model and Pulsed S-Parameter Measurements
/forschung/publikationen/novel-approach-to-trapping-effect-modeling-based-on-chalmers-model-and-pulsed-s-parameter-measurements
This paper presents a novel approach to account for trapping effects in GaN HEMT devices. Recent works demonstrated good results relying on physics-based model enhancements. Unfortunately, none of…
Balanced G-Band Gm-Boosted Frequency Doublers in Transferred Substrate InP HBT Technology
/forschung/publikationen/balanced-g-band-gm-boosted-frequency-doublers-in-transferred-substrate-inp-hbt-technology
In this paper, balanced G-band Gm-boosted frequency doublers in transferred substrate (TS) InP HBT technology are reported for the first time. The Gm-boosted frequency doublers consist of a phase…
An Efficient W-Band InP DHBT Digital Power Amplifier
/forschung/publikationen/an-efficient-w-band-inp-dhbt-digital-power-amplifier-1
This paper presents for the first time a high-efficiency W-band power amplifier (PA), the design of which follows the digital PA (DPA) design concept. The PA is realized as MMIC in a 0.8 µm InP…
GaN Laser Driver Switching 30 A in the Sub-Nanosecond Range
/forschung/publikationen/gan-laser-driver-switching-30-a-in-the-sub-nanosecond-range
A GaN-HEMT-based laser driver circuit is presented which can switch 30 A of current with a minimum pulse width of 580 ps. The pulse width can be varied electronically. Its maximum depends…
A Hybrid 50-W GaN-HEMT Ku-Band Power Amplifier
/forschung/publikationen/a-hybrid-50-w-gan-hemt-ku-band-power-amplifier
In this paper the design, implementation, and experimental results of a Ku-band 50 W GaN-HEMT power amplifier (PA) for satellite communication are presented. A 250 nm bare-die device has…