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Thermal characterization of AlGaN/GaN HEMTs on Si and n-SiC substrates
/forschung/publikationen/thermal-characterization-of-algangan-hemts-on-si-and-n-sic-substrates
The thermal properties of large periphery 60 mΩ AlGaN/GaN HEMTs fabricated on Si and SiC substrates have been studied by applying pulsed Ids characterization at varying base plate temperatures and by…
Current Dispersion in Short Channel AlGaN/GaN HEMTs
/forschung/publikationen/current-dispersion-in-short-channel-algangan-hemts
This work presents investigations of the dynamic behavior of short channel AlGaN/GaN HEMTs with Lg varying from 100 nm to 200 nm. Transistors were fabricated using AlGaN/GaN epitaxial structures with…
High-Power Distributed Feedback Lasers With Surface Gratings: Theory and Experiment
/forschung/publikationen/high-power-distributed-feedback-lasers-with-surface-gratings-theory-and-experiment
Semiconductor lasers with integrated surface gratings are known to operate with narrow spectra as well as high power and efficiency. In this paper, we present a theoretical description of DFB lasers…
Improved thermal management of InP transistors in transferred-substrate technology with diamond heat-spreading layer
/forschung/publikationen/improved-thermal-management-of-inp-transistors-in-transferred-substrate-technology-with-diamond-heat-spreading-layer
A method to improve the thermal management of indium phosphide (InP) double-hetero bipolar transistors (DHBTs) fabricated in a transferred- substrate technology is presented. A vapour-phase deposited…
Semi-polar (1122) -GaN templates grown on 100 mm trench-patterned r-plane sapphire
/forschung/publikationen/semipolar-1122-ingan-light-emitting-diodes-grown-on-chemically-mechanically-polished-gan-templates
InGaN multiple quantum well light-emitting diodes (LEDs) were grown on chemically-mechanically polished (1122) GaN templates (up to 100mm diameter wafers) by metalorganic vapour phase epitaxy.…
24-wavelength distributed Bragg reflector laser array with surface gratings
/forschung/publikationen/24-wavelength-distributed-bragg-reflector-laser-array-with-surface-gratings
A small footprint diode laser array of 24 individually addressable distributed Bragg reflector lasers is presented. Third-order gratings etched into the surface of an AlGaAs vertical waveguide…
High Beam Quality in Broad Area Lasers via Suppression of Lateral Carrier Accumulation
/forschung/publikationen/high-beam-quality-in-broad-area-lasers-via-suppression-of-lateral-carrier-accumulation
High power 9xx-nm broad-area lasers with improved beam quality are required for many applications, but the physical limitations remain unclear, especially the relative importance of free-carrier and…
Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N
/forschung/publikationen/spatial-clustering-of-defect-luminescence-centers-in-si-doped-low-resistivity-al082ga018n
A series of Si-doped AlN-rich AlGaN layers with low resistivities was characterized by a combination of nanoscale imaging techniques. Utilizing the capability of scanning electron microscopy to…
Index-Antiguiding in Narrow-Ridge GaN-Based Laser Diodes Investigated by Measurements of the Current-Dependent Gain and Index Spectra and by Self-Consistent Simulation
/forschung/publikationen/index-antiguiding-in-narrow-ridge-gan-based-laser-diodes-investigated-by-measurements-of-the-current-dependent-gain-and-index-spectra-and-by-self-consistent-simulation
The threshold current density of narrow (1.5 µm) ridge-waveguide InGaN multi-quantum-well laser diodes and the shape of their lateral far-field patterns strongly depend on the etch depth of the…
Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature
/forschung/publikationen/degradation-of-inalgan-based-uv-b-light-emitting-diodes-stressed-by-current-and-temperature
The degradation of the electrical and optical properties of (InAlGa)N-based multiple quantum well light emitting diodes (LEDs) emitting near 308 nm under different stress conditions has been…