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A Novel Model for Digital Predistortion of Discrete Level Supply-Modulated RF Power Amplifiers
/forschung/publikationen/a-novel-model-for-digital-predistortion-of-discrete-level-supply-modulated-rf-power-amplifiers
The linearization of a discrete level supplymodulated RF power amplifier using digital predistortion (DPD) is investigated. The characteristics of the system are evaluated and a novel DPD model,…
High duty cycle, highly efficient fiber coupled 940-nm pump module for high-energy solid-state lasers
/forschung/publikationen/high-duty-cycle-highly-efficient-fiber-coupled-940-nm-pump-module-for-high-energy-solid-state-lasers
Tailored diode laser single emitters with long (6 mm) resonators and wide (1.2 mm) emission apertures that operate with 940 nm emission wavelength were assembled in novel edge-cooled…
Rear-side resonator architecture for the passive coherent combining of high-brightness laser diodes
/forschung/publikationen/rear-side-resonator-architecture-for-the-passive-coherent-combining-of-high-brightness-laser-diodes
We describe a new coherent beam combining architecture based on passive phase locking of emitters in an extended cavity on the rear facet and their coherent combination on the front facet. This…
Impact of acceptor concentration on the resistivity of Ni/Au p-contacts on semipolar (20-21) GaN:Mg
/forschung/publikationen/impact-of-acceptor-concentration-on-the-resistivity-of-niau-p-contacts-on-semipolar-20-21-ganmg
The p-type doping of GaN with Mg, in particular doping of p++ cap layers and its influence on the resistivity of Ni/Au contacts on semipolar (20-21) GaN, has been investigated. For this purpose, we…
Power performance of 65 nm CMOS integrated LDMOS transistors at WLAN and X-band frequencies
/forschung/publikationen/power-performance-of-65nbspnm-cmos-integrated-ldmos-transistors-at-wlan-and-x-band-frequencies
Laterally diffused metal oxide semiconductor (LDMOS) transistors with 10 V breakdown voltage have been implemented in a 65 nm Complementary metal oxide semiconductor (CMOS) process without…
Enabling novel functionality in heavily doped ZnO:Ga by nanostructuring: an efficient plasmonic refractive index sensor
/forschung/publikationen/enabling-novel-functionality-in-heavily-doped-znoga-by-nanostructuring-an-efficient-plasmonic-refractive-index-sensor
We demonstrate a proof-of-concept refractive index sensor based on heavily doped ZnO:Ga nanostructured in a grating configuration, which supports free space excitation of propagating surface…
Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements
/forschung/publikationen/determination-of-polarization-fields-in-group-iii-nitride-heterostructures-by-capacitance-voltage-measurements
The polarization fields in wurtzite group III-nitrides strongly influence the optical properties of InAlGaN-based light emitters, e.g., the electron and hole wave function overlap in quantum wells.…
Surface effects on thermoelectric properties of metallic and semiconducting nanowires
/forschung/publikationen/surface-effects-on-thermoelectric-properties-of-metallic-and-semiconducting-nanowires
Metallic and semiconducting nanowires (NWs) are of interest in the field of thermoelectrics, because they act as model system to investigate the influence of surfaces on the thermoelectric transport…
Comparison of yellow light emitting micro integrated laser modules with different geometries of the crystals for second harmonic generation
/forschung/publikationen/comparison-of-yellow-light-emitting-micro-integrated-laser-modules-with-different-geometries-of-the-crystals-for-second-harmonic-generation
In this work three different concepts for micro integrated laser sources emitting light at 560 nm are investigated. The modules have different near infrared diode laser sources and different…
Compact deep UV laser system at 222.5 nm by single-pass frequency doubling of high-power GaN diode laser emission
/forschung/publikationen/compact-deep-uv-laser-system-at-2225-nm-by-single-pass-frequency-doubling-of-high-power-gan-diode-laser-emission
Deep ultraviolet (DUV) lasers emitting below 300 nm are of great interest for many applications, for instance in medical diagnostics or for detecting biological agents. Established DUV lasers,…