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Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride
/forschung/publikationen/fe-doping-in-hydride-vapor-phase-epitaxy-for-semi-insulating-gallium-nitride
Fe-doping of GaN layers of 3 in. in diameter and a thickness of 1 mm in a vertical AIX-HVPE reactor is studied. Ferrocen was used as Fe source. It is shown that a sufficient uniformity of…
Astigmatism-free high-brightness 1060 nm edge-emitting lasers with narrow circular beam profile
/forschung/publikationen/astigmatism-free-high-brightness-1060-nm-edge-emitting-lasers-with-narrow-circular-beam-profile
1060 nm high-brightness vertical broad-area edge-emitting lasers providing anastigmatic high optical power into a narrow circular beam profile are demonstrated. Ridge-waveguide (RW) lasers yield…
Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs
/forschung/publikationen/temperature-dependent-dynamic-on-state-resistance-in-gan-on-si-based-normally-off-hfets
Enhancement-mode GaN-on-Si HFETs for power switching application are investigated under fast switching and elevated ambient temperatures conditions. The switching characteristics are used to evaluate…
Role of substrate quality on the performance of semipolar (1122) InGaN light-emitting diodes
/forschung/publikationen/role-of-substrate-quality-on-the-performance-of-semipolar-1122-ingan-light-emitting-diodes
We compare the optical properties and device performance of unpackaged InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) emitting at ∼430 nm grown simultaneously on a high-cost…
Exciton localization in semipolar (1122) InGaN multiple quantum wells
/forschung/publikationen/exciton-localization-in-semipolar-1122-ingan-multiple-quantum-wells
The exciton localization in semipolar (1122) InxGa1-xN (0.13≤x≤0.35) multiple-quantum-well (MQW) structures has been studied by excitation power density and temperature dependent photoluminescence. A…
An influence of the local strain on cathodoluminescence of GaN/AlxGa1-xN nanowire structures
/forschung/publikationen/an-influence-of-the-local-strain-on-cathodoluminescence-of-ganalxga1-xn-nanowire-structures
Near-band-edge excitonic emission shift is investigated as a measure of the local strain in GaN nanowires with single AlxGa1-xN sections of various Al contents (x=0.0, 0.22, 0.49, 1.0). Complementary…
Structural and optical properties of (1122) InGaN quantum wells compared to (0001) and (1120)
/forschung/publikationen/structural-and-optical-properties-of-1122-ingan-quantum-wells-compared-to-0001-and-1120
We benchmarked growth, microstructure and photo luminescence (PL) of (1122) InGaN quantum wells (QWs) against (0001) and (1120). In incorporation, growth rate and the critical thickness of (1122) QWs…
Efficient Current Injection Into Single Quantum Dots Through Oxide-Confined p-n-Diodes
/forschung/publikationen/efficient-current-injection-into-single-quantum-dots-through-oxide-confined-p-n-diodes
Current injection into single quantum dots embedded in vertical p-n-diodes featuring oxide apertures is analyzed in the low-injection regime suitable for single-photon emitters. The experimental and…
Optimization of the Design of Terahertz Detectors Based on Si CMOS and AlGaN/GaN Field-Effect Transistors
/forschung/publikationen/optimization-of-the-design-of-terahertz-detectors-based-on-si-cmos-and-algangan-field-effect-transistors
TeraFETs are THz power detectors based on field-effect transistors (FETs) integrated with antennas. The first part of this paper discusses the design of Si CMOS TeraFETs leading to an optimized…
The impact of low Al-content waveguides on power and efficiency of 9xx nm diode lasers between 200 and 300K
/forschung/publikationen/the-impact-of-low-al-content-waveguides-on-power-and-efficiency-of-9xx-nm-diode-lasers-between-200-and-300k
We present results on investigations of 9xx nm, GaAs-based diode lasers with 100 µm wide, 4 mm long stripes operating at temperatures between 200 and 300 K. As temperatures are reduced…