Suche
Regeln für die Suche
- Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
- Maximal 200 Zeichen insgesamt
- Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
- UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
- Alle Suchwörter werden zu Kleinschreibung konvertiert
A compact and robust diode laser system for atom interferometry on a sounding rocket
/forschung/publikationen/a-compact-and-robust-diode-laser-system-for-atom-interferometry-on-a-sounding-rocket
We present a diode laser system optimized for laser cooling and atom interferometry with ultra-cold rubidium atoms aboard sounding rockets as an important milestone toward space-borne quantum…
Atomic signatures of local environment from core-level spectroscopy in β-Ga2O3
/forschung/publikationen/atomic-signatures-of-local-environment-from-core-level-spectroscopy-in-b-ga2o3
We present a joint theoretical and experimental study on core-level excitations from the oxygen K edge of β-Ga2O3. A detailed analysis of the electronic structure reveals the importance of O-Ga…
AlN growth on nano-patterned sapphire: A route for cost efficient pseudo substrates for deep UV LEDs
/forschung/publikationen/aln-growth-on-nano-patterned-sapphire-a-route-for-cost-efficient-pseudo-substrates-for-deep-uv-leds
C-plane-oriented sapphire substrates that were patterned on the nanoscale were overgrown by AlN using metal-organic vapor phase epitaxy. The occurrence of undesired misaligned AlN growth was…
Temperature and doping dependent changes in surface recombination during UV illumination of (Al)GaN bulk layers
/forschung/publikationen/temperature-and-doping-dependent-changes-in-surface-recombination-during-uv-illumination-of-algan-bulk-layers
We have studied the effect of continuous illumination with above band gap energy on the emission intensity of polar (Al)GaN bulk layers during the photoluminescence experiments. A temporal change in…
Superconducting ferecrystals: turbostratically disordered atomic-scale layered (PbSe)1.14(NbSe2)n thin films
/forschung/publikationen/superconducting-ferecrystals-turbostratically-disordered-atomic-scale-layered-pbse114nbse2n-thin-films
Hybrid electronic heterostructure films of semi- and superconducting layers possess very different properties from their bulk counterparts. Here, we demonstrate superconductivity in ferecrystals:…
1180nm DBR-ridge waveguide lasers with strain compensation layers in the active region for lifetime improvement
/forschung/publikationen/1180nm-dbr-ridge-waveguide-lasers-with-strain-compensation-layers-in-the-active-region-for-lifetime-improvement
DBR ridge waveguide lasers at 1180nm were developed based on strained InGaAs quantum wells. The lasers feature a lifetime of more than 1000h at 100mW and are believed to be a key component for…
Experimental and theoretical studies into the limits to peak power in GaAs-based diode lasers
/forschung/publikationen/experimental-and-theoretical-studies-into-the-limits-to-peak-power-in-gaas-based-diode-lasers
An overview is presented of progress in studies to diagnose and address limits to peak power in high power diode lasers. Key terms in advanced structures include carrier losses in the p-side…
Assessing the Impact of Thermal Barriers on the Thermal Lens Shape in High Power Broad Area Diode Lasers
/forschung/publikationen/assessing-the-impact-of-thermal-barriers-on-the-thermal-lens-shape-in-high-power-broad-area-diode-lasers
Measured thermal profiles on GaAs broad area diode lasers (Popt > 10 W, λ = 910 nm) were reproduced in FEM simulation, indicating an unforeseen thermal barrier…
Studies of limitations to peak power and efficiency in diode lasers using extreme-double-asymmetric vertical designs
/forschung/publikationen/studies-of-limitations-to-peak-power-and-efficiency-in-diode-lasers-using-extreme-double-asymmetric-vertical-designs
High power diode lasers with novel extreme-double-asymmetric epitaxial designs with increased modal confinement in the well Γ achieve high efficiency (50%) and powers (14 W) at high continuous…
A portable shifted excitation Raman difference spectroscopy system: device and field demonstration
/forschung/publikationen/a-portable-shifted-excitation-raman-difference-spectroscopy-system-device-and-field-demonstration
In this paper, we present a portable shifted excitation Raman difference spectroscopy (SERDS) system applied in outdoor experiments. A dual-wavelength diode laser emitting at 785 nm is used as…