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Defect distribution and compositional inhomogeneities in Al0.5Ga0.5N layers grown on stepped surfaces
/forschung/publikationen/defect-distribution-and-compositional-inhomogeneities-in-al05ga05n-layers-grown-on-stepped-surfaces
This study reports on defect distribution and compositional homogeneity of AlxGa1-xN layers with a nominal composition x of 0.5 grown on AlN by metal organic vapor phase epitaxy. The AlN layers with…
CBr4-based in-situ etching of GaAs, assisted with TMAI and TMGa
/forschung/publikationen/cbr4-based-in-situ-etching-of-gaas-assisted-with-tmai-and-tmga
In-situ etching of GaAs with CBr4 in metalorganic vapor phase epitaxy has been investigated at different temperatures using in-situ reflectivity to measure the etch rates. Deep (150 nm) etching…
Efficient carrier-injection and electron-confinement in UV-B light-emitting diodes
/forschung/publikationen/efficient-carrier-injection-and-electron-confinement-in-uv-b-light-emitting-diodes
The effects of the aluminum content x and the magnesium doping concentration in the AlxGa1-xN:Mg electron blocking layer on the emission characteristics of ultraviolet lightemitting diodes has been…
On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells
/forschung/publikationen/on-optical-polarization-and-charge-carrier-statistics-of-nonpolar-ingan-quantum-wells
Optical polarization is a fundamental property of light emission from m-plane InGaN quantum wells. It is a result of band structure, anisotropic strain, the degree of polarization depending on…
A G-Band High Power Frequency Doubler in Transferred-Substrate InP HBT Technology
/forschung/publikationen/a-g-band-high-power-frequency-doubler-in-transferred-substrate-inp-hbt-technology
This letter presents a G-band balanced frequency doubler with high output power, realized using a 800 nm transferred-substrate InP-HBT process. The doubler delivers…
SciFab - a wafer-level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm-wave applications
/forschung/publikationen/scifab-a-wafer-level-heterointegrated-inp-dhbtsige-bicmos-foundry-process-for-mm-wave-applications
We present a wafer-level heterointegrated indium phosphide double heterobipolar transistor on silicon germanium bipolar-complementary metal oxide semiconductor (InP DHBT on SiGe BiCMOS) process which…
Injection Current Dependent Single-Mode Fiber Coupling of a DBR Tapered Diode Laser Beam
/forschung/publikationen/injection-current-dependent-single-mode-fiber-coupling-of-a-dbr-tapered-diode-laser-beam
In this work, we investigate experimentally the influence of injection current induced beam astigmatism change in a distributed Bragg reflector (DBR) tapered diode laser on launching of its nearly…
Miniaturized diode laser module emitting green light at 532 nm with a power of more than 900 mW for next-generation holographic displays
/forschung/publikationen/miniaturized-diode-laser-module-emitting-green-light-at-532nbspnm-with-a-power-of-more-than-900nbspmw-for-next-generation-holographic-displays
We present a micro-integrated laser module based on an amplified diode laser and second harmonic generation which is a promising candidate for a green light source in next-generation 3D holographic…
Watt-level red-emitting diode lasers and modules for display applications
/forschung/publikationen/watt-level-red-emitting-diode-lasers-and-modules-for-display-applications
Red-emitting lasers for display applications require high output powers and a high visibility. We demonstrate diode lasers and modules in the red spectral range based on AlGaInP with optical output…
Reconfigurable package integrated 20W RF power GaN HEMT with discrete thick-film MIM BST varactors
/forschung/publikationen/reconfigurable-package-integrated-20w-rf-power-gan-hemt-with-discrete-thick-film-mim-bst-varactors
A novel package integrated solution for gallium nitride high-electron-mobility transistors with an electronically two-dimensional reconfigurable L-section matching network is presented. Thick-film…