Suche

Regeln für die Suche

  • Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
  • Maximal 200 Zeichen insgesamt
  • Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
  • UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
  • Alle Suchwörter werden zu Kleinschreibung konvertiert
Suchergebnisse 851 bis 860 von 5246

An Efficient W-Band InP DHBT Digital Power Amplifier

/forschung/publikationen/an-efficient-w-band-inp-dhbt-digital-power-amplifier-1

This paper presents for the first time a high-efficiency W-band power amplifier (PA), the design of which follows the digital PA (DPA) design concept. The PA is realized as MMIC in a 0.8 µm InP…

GaN Laser Driver Switching 30 A in the Sub-Nanosecond Range

/forschung/publikationen/gan-laser-driver-switching-30-a-in-the-sub-nanosecond-range

A GaN-HEMT-based laser driver circuit is presented which can switch 30 A of current with a minimum pulse width of 580 ps. The pulse width can be varied electronically. Its maximum depends…

A Hybrid 50-W GaN-HEMT Ku-Band Power Amplifier

/forschung/publikationen/a-hybrid-50-w-gan-hemt-ku-band-power-amplifier

In this paper the design, implementation, and experimental results of a Ku-band 50 W GaN-HEMT power amplifier (PA) for satellite communication are presented. A 250 nm bare-die device has…

Synthesis and Design of Suspended Substrate Stripline Filters for Digital Microwave Power Amplifiers

/forschung/publikationen/synthesis-and-design-of-suspended-substrate-stripline-filters-for-digital-microwave-power-amplifiers

In this paper, a synthesis method for suspended substrate stripline filters for digital microwave power amplifier applications is presented. The synthesis method combines a lumped element and…

A New Modulator for Digital RF Power Amplifiers Utilizing a Wave-Table Approach

/forschung/publikationen/a-new-modulator-for-digital-rf-power-amplifiers-utilizing-a-wave-table-approach

This work presents for the first time a wave-table based coding scheme to generate a high speed binary input signal for digital RF power amplifiers. The approach maximizes the utilization of the time…

Discrete Gate Bias Modulation of a Class-G Modulated RF Power Amplifier

/forschung/publikationen/discrete-gate-bias-modulation-of-a-class-g-modulated-rf-power-amplifier

In this paper the combination of class-G supply modulation with discrete level gate bias modulation is investigated. Previous work with class-G supply modulation revealed that the supply voltage…

An 60 W Average Power Wideband Amplifier with Envelope Tracking for DVB-T Applications

/forschung/publikationen/an-60-w-average-power-wideband-amplifier-with-envelope-tracking-for-dvb-t-applications

In this paper, the development of a DVB-T power amplifier (PA) with enhanced efficiency performance based on the envelope tracking method (ET) is described. The amplifier works in the ultrahigh…

Multi-Octave GaN High Power Amplifier Using Planar Transmission Line Transformer

/forschung/publikationen/multi-octave-gan-high-power-amplifier-using-planar-transmission-line-transformer

In this work, design, implementation and experimental results of an efficient, high power and multi-octave GaN-HEMT power amplifier (PA) are presented. To overcome the low optimum source and load…

Two-Stage Harmonically Tuned 50W GaN-HEMT Wideband Power Amplifier

/forschung/publikationen/two-stage-harmonically-tuned-50w-gan-hemt-wideband-power-amplifier

In conjunction with suited terminations of harmonic load impedances, this paper contributes a systematic analysis and design for a high power, high efficiency and broadband GaN-HEMT power amplifier…

A 100 GHz Fundamental Oscillator with 25% Efficiency Based on Transferred-Substrate InP-DHBT Technology

/forschung/publikationen/a-100-ghz-fundamental-oscillator-with-25-efficiency-based-on-transferred-substrate-inp-dhbt-technology

A 96-GHz fixed-frequency fundamental oscillator with high efficiency is presented, realized using a transferred-substrate (TS) 0.8 µm InP-DHBT process. It delivers 9 dBm output power, with…