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A 315 GHz Reflection-Type Push-Push Oscillator in InP-DHBT Technology
/forschung/publikationen/a-315-ghz-reflection-type-push-push-oscillator-in-inp-dhbt-technology
A 315-GHz reflection-type push-push oscillator is presented. It is realized using a 0.8 µm-emitter transferred-substrate (TS) InP-DHBT technology with an fmax of 320 GHz. The oscillator…
Response Time of VSWR Protection for GaN HEMT based Power Amplifiers
/forschung/publikationen/response-time-of-vswr-protection-for-gan-hemt-based-power-amplifiers
Protection against high voltage-standing-wave-ratios (VSWR) is of great importance in many power amplifier applications. Despite excellent thermal and voltage breakdown properties even gallium…
Development of K- and Ka-band High-Power Amplifier GaN MMIC Fabrication Technology
/forschung/publikationen/development-of-k-and-ka-band-high-power-amplifier-gan-mmic-fabrication-technology
In the present work, we compare two different embedded-gate technologies used for the fabrication of 150 nm AlGaN/GaN HEMTs intended for K- and Ka-band satellite communication applications. DC…
Dominance of radiative recombination from electron-beam-pumped deep-UV AlGaN multi-quantum-well heterostructures
/forschung/publikationen/dominance-of-radiative-recombination-from-electron-beam-pumped-deep-uv-algan-multi-quantum-well-heterostructures
AlGaN-based multiple-quantum-well (MQW) heterostructures were irradiated with a pulsed electron beam. Excitation with a beam energy of 12 keV and a beam current of 4.4mA produced…
Dual-wavelength diode laser with electrically adjustable wavelength distance at 785 nm
/forschung/publikationen/dual-wavelength-diode-laser-with-electrically-adjustable-wavelength-distance-at-785-nm
A spectrally adjustable monolithic dual-wavelength diode laser at 785 nm as an excitation light source for shifted excitation Raman difference spectroscopy (SERDS) is presented. The spectral…
Increased diffraction efficiencies of DBR gratings in diode lasers with adiabatic ridge waveguides
/forschung/publikationen/increased-diffraction-efficiencies-of-dbr-gratings-in-diode-lasers-with-adiabatic-ridge-waveguides
The influence of the lateral layout on the diffraction efficiency of gratings in DBR lasers is presented. In this experimental study DBR ridge waveguide (RW) lasers with different ridge widths as…
Micro-Integrated External Cavity Diode Laser With 1.4-W Narrowband Emission at 445 nm
/forschung/publikationen/micro-integrated-external-cavity-diode-laser-with-14-w-narrowband-emission-at-445-nm
A compact external cavity diode laser module with 1.4-W narrowband emission at 445 nm is presented. A commercially available broad-area GaN-based laser diode is used as gain medium and a volume…
Strong amplitude-phase coupling in submonolayer quantum dots
/forschung/publikationen/strong-amplitude-phase-coupling-in-submonolayer-quantum-dots
Submonolayer quantum dots promise to combine the beneficial features of zero- and two-dimensional carrier confinement. To explore their potential with respect to all-optical signal processing, we…
Space-borne frequency comb metrology
/forschung/publikationen/space-borne-frequency-comb-metrology
Precision time references in space are of major importance to satellite-based fundamental science, global satellite navigation, earth observation, and satellite formation flying. Here we report on…
Investigation of the Dynamic On-State Resistance of 600 V Normally-Off and Normally-On GaN HEMTs
/forschung/publikationen/investigation-of-the-dynamic-on-state-resistance-of-600-v-normally-off-and-normally-on-gan-hemts
In this paper, current collapse phenomena and thermal effects in normally-off and normally-on GaN HEMTs are investigated. The experimental results show that a high-off-state voltage and high-switched…