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A Three-Level Class-G Modulated 1.85 GHz RF Power Amplifier for LTE Applications with over 50% PAE
/forschung/publikationen/a-three-level-class-g-modulated-185-ghz-rf-power-amplifier-for-lte-applications-with-over-50-pae
A highly efficient three-level class-G modulated RF power amplifier (PA) is presented. The PA is designed to operate as downlink amplifier in the 1800-1900 MHz LTE-band. At 1.85 GHz the…
2D layered transport properties from topological insulator Bi2Se3 single crystals and micro flakes
/forschung/publikationen/2d-layered-transport-properties-from-topological-insulator-bi2se3-single-crystals-and-micro-flakes
Low-field magnetotransport measurements of topological insulators such as Bi2Se3 are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such…
Nitride-Based UV-LEDs and Their Application
/forschung/publikationen/nitride-based-uv-leds-and-their-application
A wide range of applications utilize ultraviolet (UV) light in the UVB (280-320 nm) and UVC range (<280 nm). Among them are disinfection of water, air, and surfaces, sensing applications,…
Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices
/forschung/publikationen/study-of-damage-formation-and-annealing-of-implanted-iii-nitride-semiconductors-for-optoelectronic-devices
An n-GaN/n-AlGaN/p-GaN light emitting diode (LED) structure was implanted with Eu ions. High temperature high pressure annealing at 1400 °C efficiently decreases implantation damage and…
On the formation of cleaved mirror facets of GaN-based laser diodes - A comparative study of diamond-tip edge-scribing and laser scribing
/forschung/publikationen/on-the-formation-of-cleaved-mirror-facets-of-gan-based-laser-diodes-a-comparative-study-of-diamond-tip-edge-scribing-and-laser-scribing
The formation of cleaved mirror facets of GaN-based laser diodes on c-plane GaN substrates is investigated using either diamond-tip edge-scribing or laser scribing with a skip-and-scribe method. The…
Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolar InxGa1-xN/GaN quantum wells
/forschung/publikationen/impact-of-inhomogeneous-broadening-on-optical-polarization-of-high-inclination-semipolar-and-nonpolar-inxga1-xngan-quantum-wells
We investigate the influence of inhomogeneous broadening on the optical polarization properties of high-inclination semipolar and nonpolar InxGa1-xN/GaN quantum wells. Different planar m-plane and…
High power surface-grating stabilized narrow-stripe broad area lasers with beam parameter product < 2 mm×mrad
/forschung/publikationen/high-power-surface-grating-stabilized-narrow-stripe-broad-area-lasers-with-beam-parameter-product-ltnbsp2nbspmmxmrad
Narrow-stripe (30 µm aperture) broad area lasers with monolithically integrated DFB-surface-gratings deliver 5 W optical output per emitter with 50% conversion efficiency, spectral width…
Compact mode-locked diode laser system for precision frequency comparisons in microgravity experiments
/forschung/publikationen/compact-mode-locked-diode-laser-system-for-precision-frequency-comparisons-in-microgravity-experiments
We present a compact mode-locked diode laser designed to generate a frequency comb in the wavelength range of 780 nm. The spectral bandwidth exceeds 15 nm (- 20 dB level) with…
Optical Frequency Combs for Space Applications
/forschung/publikationen/optical-frequency-combs-for-space-applications
Optical frequency comb-based high resolution laser spectroscopy has been demonstrated in space under micro-gravity on two sounding rocket based experiments. The comb has been used to simultaneously…
Scalable semipolar gallium nitride templates for high-speed LEDs
/forschung/publikationen/scalable-semipolar-gallium-nitride-templates-for-high-speed-leds
Metal organic vapor phase deposition on etched 4-inch-diameter sapphire wafers is used to create low-defect-density gallium nitride templates.