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Sputtered Iridium Gate Module for GaN HEMT with Stress Engineering and High Reliability
/forschung/publikationen/sputtered-iridium-gate-module-for-gan-hemt-with-stress-engineering-and-high-reliability
A new gate module with iridium as a degradation resistant Schottky contact for GaN based HEMT devices is developed. Conformal deposition of Schottky and barrier metal in the gate trench provides…
In-situ curvature measurements applied to MOVPE-based growth of edge-emitting diode lasers
/forschung/publikationen/in-situ-curvature-measurements-applied-to-movpe-based-growth-of-edge-emitting-diode-lasers
We apply in-situ curvature measurements to GaAs/AlGaAs based edge emitting diode laser growth. Along with an increased overall AlGaAs thickness the room temperature convex wafer bow increases as…
SiC and GaN devices - wide bandgap is not all the same
/forschung/publikationen/sic-and-gan-devices-wide-bandgap-is-not-all-the-same
Silicon carbide (SiC)-diodes have been commercially available since 2001 and various SiC-switches have been launched recently. Parallelly, gallium nitride (GaN) is moving into power electronics and…
Diode lasers at 626 nm for quantum information processing
/forschung/publikationen/diode-lasers-at-626nbspnm-for-quantum-information-processing
AlGaInP based diode lasers with an emission wavelength at 626 nm were developed. The lasers feature sufficient output power and spectral radiance to perform experiments for quantum information…
High power, narrow linewidth, micro-integrated semiconductor laser modules designed for quantum sensors in space
/forschung/publikationen/high-power-narrow-linewidth-micro-integrated-semiconductor-laser-modules-designed-for-quantum-sensors-in-space
We developed a very robust diode laser module platform for the deployment of cold atom based quantum sensors in space. The micro optical benches not larger than 80 × 25mm2 host MOPA and…
1.9 W continuous-wave single transverse mode emission from 1060nm edge-emitting lasers with vertically extended lasing area
/forschung/publikationen/19-w-continuous-wave-single-transverse-mode-emission-from-1060nm-edge-emitting-lasers-with-vertically-extended-lasing-area
High-brightness edge-emitting semiconductor lasers having a vertically extended waveguide structure emitting in the 1060 nm range are investigated. Ridge waveguide (RW) lasers with 9 µm…
Molecular Spectroscopy With a Compact 557-GHz Heterodyne Receiver
/forschung/publikationen/molecular-spectroscopy-with-a-compact-557-ghz-heterodyne-receiver
We report on a heterodyne terahertz spectrometer based on a fully integrated 557-GHz receiver and a digital fast Fourier transform spectrometer. The receiver consists of a chain of multipliers and…
Tunable Impedance Matching Networks on Printed Ceramics for Output Matching of RF-Power Transistors
/forschung/publikationen/tunable-impedance-matching-networks-on-printed-ceramics-for-output-matching-of-rf-power-transistors
This work addresses tunable matching networks fabricated on functional thick film layers of Barium-Strontium- Titanate (BST) for RF-power transistors. The deposition of BST layers is performed in a…
Advanced Lumped-Element Trisection Filter for Digital Microwave Power Amplifiers
/forschung/publikationen/advanced-lumped-element-trisection-filter-for-digital-microwave-power-amplifiers
In this paper, a compact lumped element bandpass reconstruction filter for digital microwave power amplifier applications in the 800 MHz band is presented. The filter, based on the trisection…
A 270 GHz Push-Push Oscillator in InP-DHBT-on-BiCMOS Technology
/forschung/publikationen/a-270nbspghz-push-push-oscillator-in-inp-dhbt-on-bicmos-technology
A 270-GHz reflection-type push-push oscillator is presented, realized using 0.8µm emitter InP-DHBTs. The InP DHBT-on-BiCMOS offers both InP HBT and BiCMOS technologies but in this case only the InP…