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Synthesis and Design of a Dual-Band Dual-Mode Filter in All Inductive Waveguide Technology
/forschung/publikationen/synthesis-and-design-of-a-dual-band-dual-mode-filter-in-all-inductive-waveguide-technology
This work presents a novel topology for the design and realization of a dualband microwave filter combining for the first time single and dual-mode cavities in all-inductive waveguide technology. The…
Compact High-Power High-Efficiency Microwave Generator With Differential Outputs
/forschung/publikationen/compact-high-power-high-efficiency-microwave-generator-with-differential-outputs
This paper reports a compact high power oscillator operating from 2.3 GHz to 2.9 GHz. Its two differential outputs deliver up to 57 W of power with an efficiency peaking at 54 %.…
VSWR Testing of RF-Power GaN Transistors
/forschung/publikationen/vswr-testing-of-rf-power-gan-transistors
A novel procedure for voltage standing wave ratio (VSWR) ruggedness testing of GaN-HEMTs is described. In the test the transistor is exposed to an increasing level of VSWR stress and an extensive set…
GaN HEMT Noise Model Performance under Nonlinear Operation
/forschung/publikationen/gan-hemt-noise-model-performance-under-nonlinear-operation
This paper investigates the capability of Pospieszalski-type and Pucel-type noise model implementations to predict the truly nonlinear noise behavior of GaN HEMT devices. The bias-dependence of the…
Design of a GaN HEMT Power Amplifier Using Resistive Loaded Harmonic Tuning
/forschung/publikationen/design-of-a-gan-hemt-power-amplifier-using-resistive-loaded-harmonic-tuning
The proper termination of the 2nd harmonic impedance is the basic task during the design of a harmonically tuned power amplifier. In addition to several approaches of defining fundamental and…
Accurate frequency noise measurement of free-running lasers
/forschung/publikationen/accurate-frequency-noise-measurement-of-free-running-lasers
We present a simple method to accurately measure the frequency noise power spectrum of lasers. It relies on creating the beat note between two lasers, capturing the corresponding signal in the time…
Effect of quantum well non-uniformities on lasing threshold, linewidth, and lateral near field filamentation in violet (Al,In)GaN laser diodes
/forschung/publikationen/effect-of-quantum-well-non-uniformities-on-lasing-threshold-linewidth-and-lateral-near-field-filamentation-in-violet-alingan-laser-diodes
The lateral near field patterns and filamentation effects of gain guided broad area (Al,In)GaN-based laser diodes emitting around 415nm have been investigated. Diodes from the same laser bar, which…
High brightness photonic band crystal semiconductor lasers in the passive mode locking regime
/forschung/publikationen/high-brightness-photonic-band-crystal-semiconductor-lasers-in-the-passive-mode-locking-regime
High brightness photonic band crystal lasers in the passive mode locking regime are presented. Optical pulses with peak power of 3 W and peak brightness of about 180 MW cm-2 sr-1…
Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors
/forschung/publikationen/effect-of-gate-trench-fabrication-technology-on-reliability-of-algangan-heterojunction-field-effect-transistors
A comparison of reliability by means of mean-time-to-failure (MTTF) determined from three-temperature accelerated life time tests for two groups of AlGaN/GaN heterojunction field effect transistors…
Epitaxial Growth of GaN on LiAlO2 Substrates
/forschung/publikationen/epitaxial-growth-of-gan-on-lialo2-substrates
Epitaxial Growth of GaN on LiAlO2 Substrates A. Mogilatenkoa,b a Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin,…