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Power performance of 65 nm CMOS integrated LDMOS transistors at WLAN and X-band frequencies
/forschung/publikationen/process-control-of-mocvd-growth-for-leds-by-in-situ-photoluminescence
Development and manufacturing of LED structures is still driven by production cost reduction and performance improvements. Therefore, in-situ monitoring during the epitaxial process plays a key role…
Power performance of 65 nm CMOS integrated LDMOS transistors at WLAN and X-band frequencies
/forschung/publikationen/development-of-semipolar-11-22-leds-on-gan-templates
We report on blue and green light-emitting-diodes (LEDs) grown on (11-22)-GaN templates. The templates were created by overgrowth on structured r-plane sapphire substrates. Low defect density,…
Master-oscillator power-amplifier in the red spectral range for holographic displays
/forschung/publikationen/master-oscillator-power-amplifier-in-the-red-spectral-range-for-holographic-displays
RGB-light sources with a coherence length of several meters are required for holographic displays. Furthermore, these emitters must feature a high luminance and must be sufficiently small in size, to…
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/forschung/publikationen/precision-uv-laser-scribing-for-cleaving-mirror-facets-of-gan-based-laser-diodes
Laser scribing with a nanosecond-pulsed UV laser operating at 355 nm was used to create precise perforation for die separation of GaN-based laser diodes. Machining depth of single- and…
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/forschung/publikationen/normally-off-gan-hemts-with-p-type-gate-off-state-degradation-forward-gate-stress-and-esd-failure
This paper reports an analysis of the degradation mechanisms of GaN-based normally-off transistors submitted to off-state stress, forward-gate operation and electrostatic discharges. The analysiswas…
Power performance of 65 nm CMOS integrated LDMOS transistors at WLAN and X-band frequencies
/forschung/publikationen/quantification-of-matrix-and-impurity-elements-in-alxga1-xn-compounds-by-secondary-ion-mass-spectrometry
The authors describe a comprehensive secondary ion mass spectrometry (SIMS) calibration procedure for the quantification of matrix and impurity elements of epitaxially grown AlxGa1-xN layers over the…
Power performance of 65 nm CMOS integrated LDMOS transistors at WLAN and X-band frequencies
/forschung/publikationen/generation-of-second-harmonic-light-with-a-wavelength-of-560-nm-in-a-compact-module
We demonstrate a continuous wave 133 mW laser module at 560.5 nm on a 50 mm · 10 mm optical bench. The setup consists of a 1121 nm distributed Bragg reflector ridge…
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/forschung/publikationen/gate-reliability-investigation-in-normally-off-p-type-gan-capalgangan-hemts-under-forward-bias-stress
Gate reliability of normally-off p-type-GaN/AlGaN/GaN high-electron mobility transistors grown on Si substrate subjected to forward bias stress at different gate voltages and temperatures was…
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/forschung/publikationen/low-absorption-loss-p-algan-superlattice-cladding-layer-for-current-injection-deep-ultraviolet-laser-diodes
Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures…
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/forschung/publikationen/watt-level-second-harmonic-generation-at-589nbspnm-with-a-ppmgoln-ridge-waveguide-crystal-pumped-by-a-dbr-tapered-diode-laser
A DBR tapered diode laser in continuous wave operation was used to generate second-harmonic radiation at 589 nm in a PPMgO:LN ridge waveguide crystal. An optical output power of 0.86 W at…