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Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N
/forschung/publikationen/spatial-clustering-of-defect-luminescence-centers-in-si-doped-low-resistivity-al082ga018n
A series of Si-doped AlN-rich AlGaN layers with low resistivities was characterized by a combination of nanoscale imaging techniques. Utilizing the capability of scanning electron microscopy to…
Index-Antiguiding in Narrow-Ridge GaN-Based Laser Diodes Investigated by Measurements of the Current-Dependent Gain and Index Spectra and by Self-Consistent Simulation
/forschung/publikationen/index-antiguiding-in-narrow-ridge-gan-based-laser-diodes-investigated-by-measurements-of-the-current-dependent-gain-and-index-spectra-and-by-self-consistent-simulation
The threshold current density of narrow (1.5 µm) ridge-waveguide InGaN multi-quantum-well laser diodes and the shape of their lateral far-field patterns strongly depend on the etch depth of the…
Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature
/forschung/publikationen/degradation-of-inalgan-based-uv-b-light-emitting-diodes-stressed-by-current-and-temperature
The degradation of the electrical and optical properties of (InAlGa)N-based multiple quantum well light emitting diodes (LEDs) emitting near 308 nm under different stress conditions has been…
Dynamic behaviour of a Low-Noise Amplifier GaN MMIC under input power overdrive
/forschung/publikationen/dynamic-behaviour-of-a-low-noise-amplifier-gan-mmic-under-input-power-overdrive
This paper presents the analysis of a highly robust low-noise amplifier subjected to high input power stress conditions. The LNA is realized in coplanar technology using the 0.25µm GaN-HEMT MMIC…
A 250 GHz Hetero-Integrated VCO with 0.7 mW Output Power in InP-on-BiCMOS Technology
/forschung/publikationen/a-250-ghz-hetero-integrated-vco-with-07nbspmw-output-power-in-inp-on-bicmos-technology
This paper presents a 250 GHz hetero-integrated VCO using InP-on-BiCMOS technology. It consists of a singleended Colpitts Voltage Controlled Oscillator (VCO) in 0.25 µm SiGe-BiCMOS…
Optimized Method for Achieving Accurate Signals for "True-Mode" S-Parameter Measurements
/forschung/publikationen/optimized-method-for-achieving-accurate-signals-for-quottrue-modequot-s-parameter-measurements
Due to the capabilities of modern vector network analyzers (VNAs), the usage of "True-Mode"-signals for characterizing and testing active differential devices is quite convenient.…
Design of a Triband Lumped Element Filter for Digital Microwave Power Amplifiers
/forschung/publikationen/design-of-a-triband-lumped-element-filter-for-digital-microwave-power-amplifiers
In this paper, a compact lumped element triband reconstruction filter for digital microwave power amplifier (PA) applications in the 0.8, 1.8 and 2.6 GHz band is presented. The proposed design…
An Efficient 290 GHz Harmonic Oscillator in Transferred-Substrate InP-DHBT Technology
/forschung/publikationen/an-efficient-290-ghz-harmonic-oscillator-in-transferred-substrate-inp-dhbt-technology
This paper presents a single-ended efficient 290 GHz harmonic oscillator, realized using 0.8 µm transferred-substrate (TS) InP-DHBT technology. The architecture of this oscillator is based…
Discrete RF-Power MIM BST Thick-Film Varactors
/forschung/publikationen/discrete-rf-power-mim-bst-thick-film-varactors
Discrete high power RF varactors based on barium-strontium-titanate are presented in this paper. They are targeting high power applications up to 3 GHz and feature power handling capabilities up…
A Compact Tri-Band GaN Voltage-Mode Class-D/S PA for Future 0.8/1.8/2.6 GHz LTE Picocell Applications
/forschung/publikationen/a-compact-tri-band-gan-voltage-mode-class-ds-pa-for-future-081826-ghz-lte-picocell-applications
This paper presents a compact tri-band voltage-mode class-S power amplifier module suitable for the LTE frequency bands of 0.8, 1.8 and 2.6 GHz. The demonstrator uses a broadband GaN…