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High power picosecond and nanosecond diode laser sources in the wavelength range 650 nm to 1100 nm
/forschung/publikationen/high-power-picosecond-and-nanosecond-diode-laser-sources-in-the-wavelength-range-650nbspnm-to-1100nbspnm
Optical pulses in the nanosecond and picosecond rangescan be generated by gain switching, Q-switching and mode-locking of diode lasers, either as stand-alone devices or in MOPA systemscombining…
Passive coherent combining of two tapered laser diodes in an interferometric external cavity
/forschung/publikationen/passive-coherent-combining-of-two-tapered-laser-diodes-in-an-interferometric-external-cavity
We demonstrate a rear-side phase-locking architecture with two high-brightness diode lasers. This technique is based on the passive phase-locking of emitters in an external cavity on their rear…
Study of lateral brightness in 20 µm to 50 µm wide narrow stripe broad area lasers
/forschung/publikationen/study-of-lateral-brightness-in-20nbspum-to-50nbspum-wide-narrow-stripe-broad-area-lasers
We present a design study of high power narrow stripe broad area diode lasers at 9xx-nm with contact stripe widths of 20 µm, 30 µm an 50 µm. The devices are deeply implanted with…
Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies
/forschung/publikationen/measurement-and-simulation-of-top-and-bottom-illuminated-solar-blind-algan-metal-semiconductor-metal-photodetectors-with-high-external-quantum-efficiencies
A comprehensive study on top- and bottom-illuminated Al0.5Ga0.5N/AlN metal-semiconductormetal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external…
Advanced lumped-element filters for digital microwave power amplifiers
/forschung/publikationen/advanced-lumped-element-filters-for-digital-microwave-power-amplifiers
In this paper, two compact lumped-element band pass reconstruction filters for digital microwave power amplifiers applications in the 800 MHz band are presented. The filters, based on the…
Analysis of the Switching Threshold in Dual-Level Class-G Modulated Power Amplifiers
/forschung/publikationen/analysis-of-the-switching-threshold-in-dual-level-class-g-modulated-power-amplifiers
A two-level class-G RF power amplifier system is analyzed. Measurements show that for low output powers there is an optimum switching threshold valid for both PAE and linearity while for higher…
Process Robustness and Reproducibility of sub-mm Wave Flip-Chip Interconnect Assembly
/forschung/publikationen/process-robustness-and-reproducibility-of-sub-mm-wave-flip-chip-interconnect-assembly
The design margins for sub-mm-wave flip-chip transitions in three different topologies, coplanar-to-coplanar, stripline-to-coplanar, and stripline-to-stripline, were verified with the realization and…
Diversität
/karriere/fbh-als-arbeitgeber/diversitaet
Wir leben Vielfalt – sie ist integraler Bestandteil unseres Instituts, einer der international führenden Forschungseinrichtungen für III/V-Verbindungshalbleiter! Momentan beschäftigen wir über 350…
GaN-based Power Devices Design and Development with Silvaco TCAD Solution
/termine/gan-based-power-devices-design-and-development-with-silvaco-tcad-solution
Dr. Eldad Bahat-Treidel Ferdinand-Braun-Institut
2 nm continuously tunable 488 nm micro-integrated diode laser based SHG light source for Raman spectroscopy
/forschung/publikationen/2-nm-continuously-tunable-488-nm-micro-integrated-diode-laser-based-shg-light-source-for-raman-spectroscopy
Raman spectroscopy in the visible spectral range is of great interest due to resonant Raman effects. Nevertheless, fluorescence and ambient light can mask the weak Raman lines. Shifted excitation…