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A 246 GHz Hetero-Integrated Frequency Source in InP-on-BiCMOS Technology
/forschung/publikationen/a-246-ghz-hetero-integrated-frequency-source-in-inp-on-bicmos-technology
A 246 GHz source in InP-on-BiCMOS technology is presented. It consists of a voltage controlled oscillator (VCO) in BiCMOS technology and a frequency tripler in transferred-substrate InP-HBT…
Crosstalk Corrections for Coplanar-Waveguide Scattering-Parameter Calibrations
/forschung/publikationen/crosstalk-corrections-for-coplanar-waveguide-scattering-parameter-calibrations
We study crosstalk and crosstalk corrections in coplanar-waveguide vector-network-analyzer calibrations. We show that while crosstalk corrections can improve measurement accuracy, the effectiveness…
Self-Heating in GaN Transistors Designed for High-Power Operation
/forschung/publikationen/self-heating-in-gan-transistors-designed-for-high-power-operation
DC and transient self-heating effects are investigated in normally off AlGaN/GaN transistors designed for a highpower operation. Electrical and optical methods are combined with thermal simulations;…
Generation of spectrally stable continuous-wave emission and ns pulses with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier
/forschung/publikationen/generation-of-spectrally-stable-continuous-wave-emission-and-ns-pulses-with-a-peak-power-of-4nbspw-using-a-distributed-bragg-reflector-laser-and-a-ridge-waveguide-power-amplifier
We have developed a diode-laser based master oscillator power amplifier (MOPA) light source which emits high-power spectrally stabilized and nearly-diffraction limited optical pulses in the…
Intra-cavity frequency-doubled Cr:LiCAF laser with 265 mW continuous-wave blue (395-405 nm) output
/forschung/publikationen/intra-cavity-frequency-doubled-crlicaf-laser-with-265nbspmw-continuous-wave-blue-395-405nbspnm-output
We describe continuous-wave (cw) intracavity frequency-doubling experiments performed with a Cr:LiCAF laser. The Cr:LiCAF crystal is home-grown and had passive losses below 0.15% per cm. The laser is…
Double-heterostructure ridge-waveguide GaAs/AlGaAs phase modulator for 780 nm lasers
/forschung/publikationen/double-heterostructure-ridge-waveguide-gaasalgaas-phase-modulator-for-780nbspnm-lasers
Results of a GaAs/AlGaAs-based phase modulator designed for an operating wavelength of 780 nm are presented for the first time. The modulator is based on a P-p-i-n-N double heterostructure and…
Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown
/forschung/publikationen/degradation-of-algangan-high-electron-mobility-transistors-in-the-current-controlled-off-state-breakdown
We investigate degradation mechanisms in AlGaN/GaN HEMTs which were repeatedly driven into the current-controlled off-state breakdown or subject to 60 s voltage- or current-controlled off state…
Surface topology caused by dislocations in polar, semipolar, and nonpolar InGaN/GaN heterostructures
/forschung/publikationen/surface-topology-caused-by-dislocations-in-polar-semipolar-and-nonpolar-ingangan-heterostructures
The impact of dislocations on surface topology as well as on quantum well emission in c-plane, semipolar, and nonpolar InGaN/GaN heterostructures is being analyzed by microphotoluminescence and…
Hydride Vapor-Phase Epitaxy of c-Plane AlGaN Layers on Patterned Sapphire Substrates
/forschung/publikationen/hydride-vapor-phase-epitaxy-of-c-plane-algan-layers-on-patterned-sapphire-substrates
Growth of AlxGa1-xN layers by hydride vapor-phase epitaxy on patterned sapphire substrates is investigated. The pattern consists of honeycombs which by their orientation and size promote the…
Implementation of Slanted Sidewall Gates Technology in the Fabrication of S-, X-, and Ka-band AlGaN/GaN HEMTs
/forschung/publikationen/implementation-of-slanted-sidewall-gates-technology-in-the-fabrication-of-s-x-and-ka-band-algangan-hemts
Currently the so-called "embedded gate process" where the gate is processed into an insulator trench is commonly used for AlGaN/GaN HEMT gate fabrication. In this work we present a new…