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Capability of shifted excitation Raman difference spectroscopy under ambient daylight
/forschung/publikationen/capability-of-shifted-excitation-raman-difference-spectroscopy-under-ambient-daylight
We present the capability of shifted excitation Raman difference spectroscopy (SERDS) under ambient daylight. A dual-wavelength diode laser emitting at 785 nm is used as the excitation light…
Passively Mode-Locked Diode Laser With Optimized Dispersion Management
/forschung/publikationen/passively-mode-locked-diode-laser-with-optimized-dispersion-management
We investigate passively mode-locked diode lasers with external cavity for ultrashort pulse generation. Our strategy to achieve ultrashort pulses is to generate strongly chirped pulses with a…
Linearity Analysis of Class-B/J Continuous Mode Power Amplifiers using Modulated Wideband Signals
/forschung/publikationen/linearity-analysis-of-class-bj-continuous-mode-power-amplifiers-using-modulated-wideband-signals
Linearity, along with efficiency and bandwidth, belongs to the fundamental requirements of power amplifiers for nowadays communications systems. This paper discusses how to bring together these…
New Output Network Design Approach for Voltage-Mode Class-S PAs
/forschung/publikationen/new-output-network-design-approach-for-voltage-mode-class-s-pas
This paper presents a new approach for realizing the output network of class-S power amplifiers in the 900MHz band. The idea is to use bond-wires instead of lumped inductors thus improving Q factor…
Complexity of DPD Linearization in the full RF-Band for a WiMAX Power Amplifier
/forschung/publikationen/complexity-of-dpd-linearization-in-the-full-rf-band-for-a-wimax-power-amplifier
In this paper, the influence of channel frequency in the RF-band on digital predistortion (DPD) is investigated empirically. A class-AB GaN-HEMT power amplifier targeting the 3.5 GHz band for…
Enhancing Dynamic Range and Accuracy of Load-Pull Measurements by Using Prematched Transistors
/forschung/publikationen/enhancing-dynamic-range-and-accuracy-of-load-pull-measurements-by-using-prematched-transistors
This paper describes how dynamic range and accuracy of an on-wafer load pull measurement system can be improved without costly investment in equipment. Applying prematching to the transistors on the…
70 mΩ / 600 V Normally-off GaN Transistors on SiC and Si Substrates
/forschung/publikationen/70-mo-600-v-normally-off-gan-transistors-on-sic-and-si-substrates
The static and dynamic electrical performance of normally-off p-GaN gate AlGaN/GaN HFETs, manufactured on SiC and on Si substrates are compared. By implementing a ptype GaN gate, normally-off…
Coherent combining of two high-brightness laser diodes phase-locked by a Michelson-type external cavity
/forschung/publikationen/coherent-combining-of-two-high-brightness-laser-diodes-phase-locked-by-a-michelson-type-external-cavity
We describe a new coherent beam combining architecture based on the passive phase- locking of two laser diodes in a Michelson external cavity on their rear side, and their coherent combination on…
High brightness narrow-stripe broad-area lasers with 7 W optical output at 910, 935 & 970 nm for coarse spectral beam combining
/forschung/publikationen/high-brightness-narrow-stripe-broad-area-lasers-with-7-w-optical-output-at-910-935-amp-970-nm-for-coarse-spectral-beam-combining
We present the progress of narrow stripe broad area lasers operating at 910, 935 & 970 nm, with P = 7 W and in-plane BPP down to 1.5 mm*mrad from a 30 µm wide stripe.
Timing jitter reduction of a two-section external-cavity semiconductor laser by harmonic mode-locking and optical feedback
/forschung/publikationen/timing-jitter-reduction-of-a-two-section-external-cavity-semiconductor-laser-by-harmonic-mode-locking-and-optical-feedback
Long-term timing jitter reduction of a passively mode-locked external fiber-cavity diode laser by harmonic mode-locking and optical feedback from an auxiliary cavity is experimentally demonstrated…