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Progress in the development of kilowatt-class diode laser bars for pump applications
/forschung/publikationen/progress-in-the-development-of-kilowatt-class-diode-laser-bars-for-pump-applications
Progress in diode laser pump bars is presented. Powers above 1 kW per bar are confirmed at 880 nm, and 940...980 nm, with operating efficiency ~50%. Operation at 200 K increases…
The Influence of Differential Modal Gain on the Filamentary Behavior of Broad Area Diode Lasers
/forschung/publikationen/the-influence-of-differential-modal-gain-on-the-filamentary-behavior-of-broad-area-diode-lasers
High power diode lasers with low modal gain (∼4 cm-1), predicted to operate with very low filamentation, are shown to operate with near-field modulation depth half that of reference devices…
Limitations to brightness in high power laser diodes
/forschung/publikationen/limitations-to-brightness-in-high-power-laser-diodes
A review is presented on how diagnostic studies, technological and design improvements and novel device configurations have enabled a more than fourfold improvement in lateral brightness in high…
Joule-Class 940 nm Diode Laser Bars for Millisecond Pulse Applications
/forschung/publikationen/joule-class-940-nm-diode-laser-bars-for-millisecond-pulse-applications
Diode laser bars with optimized epitaxial designs, long resonators and passivated facets deliver joule-class millisecond pulses (kilowatts of peak power) with the properties needed by advanced…
Spatial inhomogeneities in AlxGa1-xN quantum wells induced by the surface morphology of AlN/sapphire templates
/forschung/publikationen/spatial-inhomogeneities-in-alxga1-xn-quantum-wells-induced-by-the-surface-morphology-of-alnsapphire-templates
The effects of the template on the optical and structural properties of Al0.75Ga0.25N/Al0.8Ga0.2N multiple quantum well (MQWs) laser active regions have been investigated. The laser structures for…
V-pit to truncated pyramid transition in AlGaN-based heterostructures
/forschung/publikationen/v-pit-to-truncated-pyramid-transition-in-algan-based-heterostructures
The formation of three-dimensional truncated pyramids after the deposition of AlN/GaN superlattices onto (0001) AlN/sapphire templates has been analysed by atomic force microscopy as well as…
Compact Handheld Probe for Shifted Excitation Raman Difference Spectroscopy with Implemented Dual-Wavelength Diode Laser at 785 Nanometers
/forschung/publikationen/compact-handheld-probe-for-shifted-excitation-raman-difference-spectroscopy-with-implemented-dual-wavelength-diode-laser-at-785nbspnanometers
A compact handheld probe for shifted-excitation Raman difference spectroscopy (SERDS) with an implemented dual-wavelength diode laser with an emission at 785 nm is presented. The probe is milled…
Investigation of the Dynamic On-State Resistance of 600V Normally-off and Normally-on GaN HEMTs
/forschung/publikationen/investigation-of-the-dynamic-on-state-resistance-of-600v-normally-off-and-normally-on-gan-hemts
In this paper, current collapse phenomena and thermal effects in newly developed normally-off and normally-on GaN HEMTs are investigated. The experimental results show that a high off-state voltage…
Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors
/forschung/publikationen/investigation-of-gate-diode-degradation-in-normally-off-p-ganalgangan-high-electron-mobility-transistors
Gate diode conduction mechanisms were analyzed in normally-off p-GaN/AlGaN/GaN high-electron mobility transistors grown on Si wafers before and after forward bias stresses. Electrical…
Experimental Analysis and Modeling of GaN Normally-off HFETs with Trapping Effects
/forschung/publikationen/experimental-analysis-and-modeling-of-gan-normally-off-hfets-with-trapping-effects
A 70 mΩ / 600 V normally-off AlGaN/GaN HFET is analyzed and modeled. In particular, static and dynamic characteristics are investigated with the focus on modeling trapping effects…