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Linearity Analysis of a 40 W Class-G-Modulated Microwave Power Amplifier
/forschung/publikationen/linearity-analysis-of-a-40-w-class-g-modulated-microwave-power-amplifier
In this paper, a class-G power amplifier is presented. It consists of a discrete class-G supply modulator, which uses a GaN-HEMT for switching, connected to a 2.65 GHz power amplifier with…
Tunable In-package Impedance Matching for High Power Transistors based on Printed Ceramics
/forschung/publikationen/tunable-in-package-impedance-matching-for-high-power-transistors-based-on-printed-ceramics
This work addresses tunable matching networks (TMN) for in-package integration of RF-power transistors, fabricated on functional thick film layers of Barium-Strontium-Titanate (BST). The deposition…
Frequency-Agile Packaged GaN-HEMT using MIM Thickfilm BST Varactors
/forschung/publikationen/frequency-agile-packaged-gan-hemt-using-mim-thickfilm-bst-varactors
Nowadays wireless communication systems demand flexibility along with electrical efficiency. In this work the highly efficient GaN-HEMT technology is combined with electrically tunable…
High-Sensitivity Wideband THz Detectors Based on GaN HEMTs with Integrated Bow-Tie Antennas
/forschung/publikationen/high-sensitivity-wideband-thz-detectors-based-on-gan-hemts-with-integrated-bow-tie-antennas
This paper reports on antenna-coupled field-effect transistors for the detection of terahertz radiation (TeraFETs), based on AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs are…
G-Band Frequency Doubler based on InP Transferred-Substrate Technology
/forschung/publikationen/g-band-frequency-doubler-based-on-inp-transferred-substrate-technology
A G-band broadband frequency doubler based on InP transferred-substrate (TS) InP-DHBT technology is presented. The MMIC utilizes a two 2-finger HBTs with a total emitter size of…
Solar-blind AlGaN MSM photodetectors with 24% external quantum efficiency at 0 V
/forschung/publikationen/solar-blind-algan-msm-photodetectors-with-24-external-quantum-efficiency-at-0-v
By utilising an asymmetric metallisation scheme to fabricate an AlGaN-based solar-blind metal-semiconductor-metal photodetector, a zero-bias external quantum efficiency (EQE) of 24% for illumination…
UV-C Lasing From AlGaN Multiple Quantum Wells on Different Types of AlN/Sapphire Templates
/forschung/publikationen/uv-c-lasing-from-algan-multiple-quantum-wells-on-different-types-of-alnsapphire-templates
AlGaN multiple quantum well lasers for optical pumping have been grown by metal-organic vapor phase epitaxy on high and low dislocation density AlN/sapphire templates. Lasers on planar templates…
Modal Behavior of an External Cavity Diode Laser
/forschung/publikationen/modal-behavior-of-an-external-cavity-diode-laser
This paper reports the results of numerical investigations of the modal behavior of an external cavity diode laser device composed of a semiconductor laser and a distant Bragg grating, which provides…
Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes
/forschung/publikationen/strongly-transverse-electric-polarized-emission-from-deep-ultraviolet-algan-quantum-well-light-emitting-diodes
The optical polarization of emission from ultraviolet (UV) light emitting diodes (LEDs) based on (0001)-oriented AlxGa1-xN multiple quantum wells (MQWs) has been studied by simulations and…
High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications
/forschung/publikationen/high-temperature-performances-of-normally-off-p-gan-gate-algangan-hemts-on-sic-and-si-substrates-for-power-applications
We analyse high temperature effects (up to 420°C) in the performances of p-GaN gate normally-off AlGaN/GaN HEMTs on Si and SiC substrates for power applications. With increasing temperature, IDMAX…