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Semi-polar (1122) -GaN templates grown on 100 mm trench-patterned r-plane sapphire
/forschung/publikationen/semi-polar-1122-gan-templates-grown-on-100nbspmm-trench-patterned-r-plane-sapphire
This report describes the successful realization of high-quality semi-polar (1122) -GaN templates grown on 100mm diameter r-plane patterned sapphire. Trench patterning is accomplished by plasma…
Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN
/forschung/publikationen/effect-of-carrier-gas-in-hydride-vapor-phase-epitaxy-on-optical-and-structural-properties-of-gan
Variation of the H2 fraction in the carrier gas affects partial pressures and homogeneity of the species at the growth front. Changing the H2:N2 ratio thus requires readjustment of the flows of the…
Experimental Study of the Timing Jitter of a Passively Mode-Locked External-Cavity Semiconductor Laser Subject to Repetition Rate Transitions and Optical Feedback
/forschung/publikationen/experimental-study-of-the-timing-jitter-of-a-passively-mode-locked-external-cavity-semiconductor-laser-subject-to-repetition-rate-transitions-and-optical-feedback
We experimentally investigate the timing jitter (TJ) of a passively mode-locked external-cavity diode laser. Variation of the gain current and the absorber reverse bias voltage allows transitions…
Enhanced topologies for the design of dual-mode filters using inductive waveguide structures
/forschung/publikationen/enhanced-topologies-for-the-design-of-dual-mode-filters-using-inductive-waveguide-structures
This paper presents novel topologies for the design and realization of microwave filters combining dual-mode and single-mode cavities in all-inductive waveguide technology. Examples of orders 3-5…
Combined Mg/Zn p-type doping for AlGaInP laser diodes
/forschung/publikationen/combined-mgzn-p-type-doping-for-algainp-laser-diodes-2
Carbon-doped AlGaAs and AlInP doped with zinc or magnesium are compared as p-cladding material for laser diodes emitting around 633 nm. Mg doping of Al(Ga)InP is linearly dependent on the Cp2Mg…
Growth of laser diode structures with emission wavelength beyond 1100 nm for yellow-green emission by frequency conversion
/forschung/publikationen/growth-of-laser-diode-structures-with-emission-wavelength-beyond-1100nbspnm-for-yellow-green-emission-by-frequency-conversion
Laser structures for emission wavelengths of 1120 nm and 1180 nm, suitable for non-linear frequency conversion to yellow-green and yellow-orange, were developed. At 1120 nm emission…
Analysis of HVPE grown AlGaN layers on honeycomb patterned sapphire
/forschung/publikationen/analysis-of-hvpe-grown-algan-layers-on-honeycomb-patterned-sapphire
Thick AlxGa1-xN layers were grown by hydride vapor phase epitaxy on hexagonally patterned sapphire substrates. Non-c-planar growth is found inside the etched honeycombs which in part hinders…
AlAsP-based strain-balancing in MOVPE-grown distributed Bragg reflectors
/forschung/publikationen/alasp-based-strain-balancing-in-movpe-grown-distributed-bragg-reflectors
We demonstrate a way to reduce the room temperature wafer bow of AlAs/GaAs super-lattices (SL) by the addition of phosphorus forming an AlAsyP1-y/GaAs SL. In-situ monitoring of the curvature not only…
Temperature-dependent thermoelectric properties of individual silver nanowires
/forschung/publikationen/temperature-dependent-thermoelectric-properties-of-individual-silver-nanowires
Individual highly pure single-crystalline silver nanowires (Ag NWs) were investigated with regard to the electrical conductivity σ, the thermal conductivity λ, and the Seebeck coefficient S as a…
High-power diode lasers at 1178 nm with high beam quality and narrow spectra
/forschung/publikationen/high-power-diode-lasers-at-1178nbspnm-with-high-beam-quality-and-narrow-spectra
High-power distributed Bragg reflector tapered diode lasers (DBR-TPLs) at 1180 nm were developed based on highly strained InGaAs quantum wells. The lasers emit a nearly diffraction-limited beam with…