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On the equivalence between cylindrical and rectangular via-holes in electromagnetic modeling
/forschung/publikationen/on-the-equivalence-between-cylindrical-and-rectangular-via-holes-in-electromagnetic-modeling
In the em simulation of MMICs and packages it is often advantageous to use vias with rectangular cross-section instead of cicular ones, because this allows for more efficient meshing thus reducing…
Ultrashort pulse Yb:LaSc3(BO3)4 mode-locked oscillator
/forschung/publikationen/ultrashort-pulse-yblasc3bo34-mode-locked-oscillator
Passive mode-locked laser operation based on an Yb-doped lanthanum scandium borate crystal is demonstrated. Pulse durations as short as 58 fs and 67 fs were achieved applying a Ti:sapphire-…
3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40% at 650 nm
/forschung/publikationen/3-w-broad-area-lasers-and-12-w-bars-with-conversion-efficiencies-up-to-40-at-650-nm
Highly efficient 650-nm high-power broad-area laser diodes and laser bars with single quantum well InGaP quantum wells embedded in AlGaInP waveguide layers, and n-AlInP and p-AlGaAs cladding layers…
9-W Output Power From an 808-nm Tapered Diode Laser in Pulse Mode Operation With Nearly Diffraction-Limited Beam Quality
/forschung/publikationen/9-w-output-power-from-an-808-nm-tapered-diode-laser-in-pulse-mode-operation-with-nearly-diffraction-limited-beam-quality
808-nm tapered diode lasers are fabricated based on a super-large optical-cavity (SLOC) structure with very small divergence of 18° full width at half-maximun (FWHM). A 16-W overall output power…
Thermal lensing in high-power ridge-waveguide lasers
/forschung/publikationen/thermal-lensing-in-high-power-ridge-waveguide-lasers-1
The lateral farfield characteristics of ridge-waveguide (RW) lasers emitting around 1064 nm an output power of 1.3 W at an injection current of 2 A were measured and modeled. Due to…
High energy irradiation effects on AlGaN/GaN HFET devices
/forschung/publikationen/high-energy-irradiation-effects-on-algangan-hfet-devices
The effect of proton, carbon, oxygen and krypton irradiation on AlGaN HFET devices has been studied. Irradiation was performed at 68 and 120 MeV with fluences in the range from 1 × 107 to 1 × 1013…
Monolithic high brightness diode lasers results and developments at FBH
/forschung/publikationen/monolithic-high-brightness-diode-lasers-results-and-developments-at-fbh
Brightness is one of the most important criteria for diode laser applications beside reliability and efficiency. In this paper results were given for different approaches of high power nearly…
Degradation Analysis of 808 nm GaAsP Laser Diodes
/forschung/publikationen/degradation-analysis-of-808-nm-gaasp-laser-diodes
Degradation data from accelerated life test of 808 nm strained GaAsP quantum well lasers are analyzed. The Eyring model and the statistical model of non-linear mixed effects are applied to estimate…
Five-hundred-milliwatts distributed-feedback diode laser emitting at 940nm
/forschung/publikationen/five-hundred-milliwatts-distributed-feedback-diode-laser-emitting-at-940nm
A DFB laser emitting at a wavelength around 940nm in a single longitudinal mode up to an output power of 500mW with a side mode suppression ratio greater than 50 dB is presented. More than…
High Yield Transferred Substrate InP DHBT
/forschung/publikationen/high-yield-transferred-substrate-inp-dhbt
A transferred substrate InP DHBT of 0.8 µm emitter width was developed. The transistors featured high yield and homogeneous device characteristics over the three inch wafer, with an…