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10W reliable operation of 808nm broad-area diode lasers by near-field distribution control in a multistripe contact geometry
/forschung/publikationen/10w-reliable-operation-of-808nm-broad-area-diode-lasers-by-near-field-distribution-control-in-a-multistripe-contact-geometry
High-power diode lasers operating at 808 nm and consisting of a multiple ridge-waveguide structure have been fabricated. Lasers with this structure show a more stable far and near field pattern…
670 nm semiconductor lasers for Lithium spectroscopy with 1 W
/forschung/publikationen/670-nm-semiconductor-lasers-for-lithium-spectroscopy-with-1-w
A master oscillator power amplifier system operating around 670 nm is presented. For the master laser an external cavity diode laser is used with an output power of 25 mW at tunable…
Generation of more than 300 mW diffraction-limited light at 405 nm by second-harmonic generation of a tapered diode laser with external cavity feedback
/forschung/publikationen/generation-of-more-than-300-mw-diffraction-limited-light-at-405-nm-by-second-harmonic-generation-of-a-tapered-diode-laser-with-external-cavity-feedback
We have constructed a blue laser source consisting of a single-frequency tapered diode laser with external cavity feedback that is frequency doubled by a quasi-phase matched KTP (PPKTP) in a bowtie…
Novel low-loss 3-element ring resonator for second-harmonic generation of 808nm into 404nm using periodically poled KTP
/forschung/publikationen/novel-low-loss-3-element-ring-resonator-for-second-harmonic-generation-of-808nm-into-404nm-using-periodically-poled-ktp
We present a novel ring resonator for second harmonic generation consisting of only two spherical mirrors and a refractive element. In our work we use periodically poled KTP as a nonlinear material…
Laser structures with InGaAs-QWs and n-AlGaAs/P-GaInP cladding layers for emission wavelength beyond 1100 nm
/forschung/publikationen/laser-structures-with-ingaas-qws-and-n-algaasp-gainp-cladding-layers-for-emission-wavelength-beyond-1100nbspnm
Laser structures with InGaAs-QWs and n-AlGaAs/P-GaInP cladding layers for emission wavelength beyond 1100 nm F. Bugge, U. Zeimer, G. Erbert, M. Weyers …
Optimization of HVPE growth of freestanding c-plane GaN layers using (100) γ-LiAlO2 substrates
/forschung/publikationen/optimization-of-hvpe-growth-of-freestanding-c-plane-gan-layers-using-100-g-lialo2-substrates
Freestanding c-plane GaN substrates are obtained using (100) γ- LiAlO2 substrates due to spontaneous separation during post-growth cool down. It is shown that by growth optimization the…
Correction of picosecond voltage pulses measured with external electro-optic sampling tips
/forschung/publikationen/correction-of-picosecond-voltage-pulses-measured-with-external-electro-optic-sampling-tips
We quantify the distortion that an external electro-optic sampling tip imprints on a measured picosecond voltage pulse propagating on a coplanar stripline. In order to characterize the sampling tip,…
Self-separation of thick two inch GaN layers grown by HVPE on sapphire using epitaxial lateral overgrowth with masks containing tungsten
/forschung/publikationen/self-separation-of-thick-two-inch-gan-layers-grown-by-hvpe-on-sapphire-using-epitaxial-lateral-overgrowth-with-masks-containing-tungsten
Self-separation of freestanding GaN layers of 50 mm diameter and thicknesses from around 50 µm to several hundred µm has been achieved using lateral overgrowth over silicon…
Degradation behavior and thermal properties of red (650 nm) high-power diode single emitters and laser bars
/forschung/publikationen/degradation-behavior-and-thermal-properties-of-red-650-nm-high-power-diode-single-emitters-and-laser-bars
The degradation behavior of broad-area laser diodes and bars emitting at 650 nm under constant power operation is investigated. In addition to the increase in operation current the temperature…
670 nm tapered lasers and amplifiers with output powers P > 1 W and nearly diffraction limited beam quality
/forschung/publikationen/670nbspnm-tapered-lasers-and-amplifiers-with-output-powers-pnbspgtnbsp1nbspw-and-nearly-diffraction-limited-beam-quality
High-brightness tapered lasers and amplifiers at 670 nm with output powers up to 1 W and nearly diffraction limited beam quality were realised. The devices consist of a 750 µm…