3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40% at 650 nm
B. Sumpf, M. Zorn, R. Staske, J. Fricke, P. Ressel, A. Ginolas, K. Paschke, G. Erbert, M. Weyers, G. Tränkle
Published in:
IEEE J. Sel. Top. Quantum Electron., vol. 13, no. 5, pp. 1188-1193 (2007).
Abstract:
Highly efficient 650-nm high-power broad-area laser diodes and laser bars with single quantum well InGaP quantum wells embedded in AlGaInP waveguide layers, and n-AlInP and p-AlGaAs cladding layers are presented. Broad-area lasers that are 100-µm wide reach output powers of 3 W and conversion efficiencies of about 40% at 15°C. For 5-mm wide laser bars (filling factor of 20%), maximum output powers of 12 W in continuous-wave (CW) operation and 55 W in quasi-CW mode were obtained. Reliable operation of 5000 h at 800 mW for single emitters and at 5 W for laser bars will be reported.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
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