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Reliable operation of 785 nm DFB diode lasers for rapid Raman spectroscopy
/forschung/publikationen/reliable-operation-of-785nbspnm-dfb-diode-lasers-for-rapid-raman-spectroscopy
Experimental results on RW and BA DFB lasers emitting at 785 nm suitable for Raman spectroscopy are presented. Optical spectra of the RW DFB laser reveal single mode operation with a side-mode…
Gradual degradation of red-emitting high-power diode laser bars
/forschung/publikationen/gradual-degradation-of-red-emitting-high-power-diode-laser-bars
The authors analyze early stages of gradual degradation in highly reliable 650 nm emitting high-power diode laser arrays with continuous wave emission powers of 2.5 W (facet load of 4…
Red luminescence from freestanding GaN grown on LiAlO2 substrate by hydride vapor phase epitaxy
/forschung/publikationen/red-luminescence-from-freestanding-gan-grown-on-lialo2-substrate-by-hydride-vapor-phase-epitaxy
Photoluminescence (PL) spectroscopy was used to study the red luminescence band from freestanding GaN grown on LiAlO2 substrate by hydride vapor phase epitaxy. The red luminescence band was observed…
Long-term reliability studies of high-power 808 nm tapered diode lasers with stable beam quality
/forschung/publikationen/long-term-reliability-studies-of-high-power-808-nm-tapered-diode-lasers-with-stable-beam-quality
Long-term ageing tests of 808 nm tapered diode lasers with tensile-strained GaAsP quantum wells embedded in AlGaAs waveguides are presented. The lasers have been aged over 7200 h at an…
Terahertz generation with a 1064nm DFB laser diode
/forschung/publikationen/terahertz-generation-with-a-1064nm-dfb-laser-diode
Optoelectronic generation of continuous THz radiation with a compact, high power DFB laser which operates simultaneously on two longitudinal modes corresponding to the fundamental and first-order…
650 nm InGaP broad area lasers with 5000 h reliable operation at 600 mW
/forschung/publikationen/650nbspnm-ingap-broad-area-lasers-with-5000nbsph-reliable-operation-at-600nbspmw
Reliable operation of 650-nm broad area laser diodes with InGaP quantum-wells embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers is reported. Mounted on …
10W continuous-wave monolithically integrated master-oscillator power-amplifier
/forschung/publikationen/10w-continuous-wave-monolithically-integrated-master-oscillator-power-amplifier
A semiconductor-based master-oscillator power-amplifier operating at 977 nm is demonstrated to emit more than 10 W continuous wave in a nearly diffraction limited beam with a narrow spectral…
High-power red laser diodes grown by MOVPE
/forschung/publikationen/high-power-red-laser-diodes-grown-by-movpe
We report on the development of high-power laser diodes and laser bars emitting in the visible red spectral region. In contrast to the normally used epitaxial structure consisting of Al(Ga)InP…
MOVPE growth optimization for laser diodes with highly strained InGaAs MQWs
/forschung/publikationen/movpe-growth-optimization-for-laser-diodes-with-highly-strained-ingaas-mqws
With the aim of realizing high power laser diodes on GaAs with narrow far fields and an emission wavelength above 1100 nm, we have studied the growth and strain behavior of pseudomorphic…
Growth optimization during III-nitride multiwafer MOVPE using real-time curvature, reflectance and true temperature measurements
/forschung/publikationen/growth-optimization-during-iii-nitride-multiwafer-movpe-using-real-time-curvature-reflectance-and-true-temperature-measurements
We employed a newly developed wafer-selective curvature, reflectance and temperature sensor (EpiCurveTT®) in an AIX2600HT Planetary Reactor®. Growth of GaN on sapphire as well as AlGaN and…