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808-nm TM Polarised High Power Broad Area Lasers with 69.5% Power Conversion Efficiency at 71-W
/forschung/publikationen/808-nm-tm-polarised-high-power-broad-area-lasers-with-695-power-conversion-efficiency-at-71-w
We report TM polarized 808-nm Lasers bars with 69.5% efficiency at 15°C. Performance is limited by the low-strained InGaAsP quantum well, which has high threshold, low slope and high sensitivity…
15-W reliable operation of 96-µm aperture broad-area diode lasers emitting at 980 nm
/forschung/publikationen/15-w-reliable-operation-of-96-um-aperture-broad-area-diode-lasers-emitting-at-980-nm
High-power broad area diode lasers emitting at 980 nm with a maximum output power of 20 W at 15°C and with reliable operation over 2000 h at 15 W and 25°C will be…
High Yield, Highly Scalable, High Voltage GaInP/GaAs HBT Technology
/forschung/publikationen/high-yield-highly-scalable-high-voltage-gainpgaas-hbt-technology
Based on a power high-voltage (HV) HBT technology the successful down scaling towards low-power devices for mixed signal integrated circuits is described. Stress effects and mechanical stability…
Transferred Substrate DHBT of ft = 410 GHz and fmax = 480 GHz for Traveling Wave Amplifiers
/forschung/publikationen/transferred-substrate-dhbt-of-ftnbspnbsp410nbspghz-and-fmaxnbspnbsp480nbspghz-for-traveling-wave-amplifiers
We report a MMIC process in transferred substrate technology. The transistors of 0.8 × 5 µm2 emitter size feature ft = 410 GHz and fmax = 480 GHz at…
Structural and optical properties of nonpolar GaN thin films
/forschung/publikationen/structural-and-optical-properties-of-nonpolar-gan-thin-films
A correlation between the structural and optical properties of GaN thin films grown in the [1120] direction has been established using transmission electron microscopy and cathodoluminescence…
A-plane GaN epitaxial lateral overgrowth structures: Growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy
/forschung/publikationen/a-plane-gan-epitaxial-lateral-overgrowth-structures-growth-domains-morphological-defects-and-impurity-incorporation-directly-imaged-by-cathodoluminescence-microscopy
The distinctly different growth domains of a-plane epitaxial lateral overgrown GaN on stripe masks oriented along [0110] direction were directly visualized by highly spatially and spectrally resolved…
Surface recombination and facet heating in high-power diode lasers
/forschung/publikationen/surface-recombination-and-facet-heating-in-high-power-diode-lasers
Surface recombination velocities and surface temperatures at front facets of standard broad-area lasers emitting at 808 nm were investigated by time-resolved two-color photoluminescence and…
Wavelength stabilization of extended-cavity tapered lasers with volume Bragg gratings
/forschung/publikationen/wavelength-stabilization-of-extended-cavity-tapered-lasers-with-volume-bragg-gratings
The wavelength stabilization of high-brightness extended-cavity lasers at 810-nm by the use of volume Bragg gratings is described. Narrow linewidth (<20 pm), high power (2.5 W) and good…
Analysis of material modifications caused by nanosecond pulsed UV laser processing of SiC and GaN
/forschung/publikationen/analysis-of-material-modifications-caused-by-nanosecond-pulsed-uv-laser-processing-of-sic-and-gan
The effects of direct UV laser processing on single crystal SiC in ambient air were investigated by crosssectional transmission electron microscopy, Auger electron spectroscopy, and measurements of…
2 MeV ion irradiation effects on AlGaN/GaN HFET devices
/forschung/publikationen/2-mev-ion-irradiation-effects-on-algangan-hfet-devices
AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with 2 MeV protons, carbon, oxygen, iron and krypton ions with fluences ranging from 1 x 109 cm-2 to…