9-W Output Power From an 808-nm Tapered Diode Laser in Pulse Mode Operation With Nearly Diffraction-Limited Beam Quality
F. Dittmar, A. Klehr, B. Sumpf, A. Knauer, J. Fricke, G. Erbert, G. Tränkle
Published in:
IEEE J. Sel. Top. Quantum Electron., vol. 13, no. 5, pp. 1194-1199 (2007).
Abstract:
808-nm tapered diode lasers are fabricated based on a super-large optical-cavity (SLOC) structure with very small divergence of 18° full width at half-maximun (FWHM). A 16-W overall output power with 9 W of nearly diffraction-limited beam quality in pulse mode operation is obtained.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
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