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High-temperature growth of AlN in a production scale 11x2 MOVPE reactor
/forschung/publikationen/high-temperature-growth-of-aln-in-a-production-scale-11x2-movpe-reactor
We report on the growth of high quality AlN films on sapphire by MOVPE in an AIX2400G3-HT planetary reactor. Specific reactor hardware modifications were conducted to facilitate growth temperatures…
Semipolar GaN grown on m-plane sapphire using MOVPE
/forschung/publikationen/semipolar-gan-grown-on-m-plane-sapphire-using-movpe
We have investigated the MOVPE growth of semipolar gallium nitride (GaN) films on (1010) m-plane sapphire substrates. Specular GaN films with a RMS roughness (10x10 µm2) of 15.2 nm…
Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes
/forschung/publikationen/effect-of-the-barrier-composition-on-the-polarization-fields-in-near-uv-ingan-light-emitting-diodes
The electroluminescence from near ultraviolet (UV) light emitting diodes containing InGaN multiple quantum wells (MQWs) with GaN, AlGaN, and InAlGaN barriers was investigated. Based on band-structure…
Peak power from 60-µm Broad Area Single Emitter Limited to 50-W by Carrier Escape
/forschung/publikationen/peak-power-from-60-um-broad-area-single-emitter-limited-to-50-w-by-carrier-escape
Passivated 1100-nm broad area lasers reach maximum power of 50-W from a 60-µm stripe under short pulse conditions. Simulations predict and spontaneous emission measurements confirm power is…
808-nm TM Polarised High Power Broad Area Lasers with 69.5% Power Conversion Efficiency at 71-W
/forschung/publikationen/808-nm-tm-polarised-high-power-broad-area-lasers-with-695-power-conversion-efficiency-at-71-w
We report TM polarized 808-nm Lasers bars with 69.5% efficiency at 15°C. Performance is limited by the low-strained InGaAsP quantum well, which has high threshold, low slope and high sensitivity…
15-W reliable operation of 96-µm aperture broad-area diode lasers emitting at 980 nm
/forschung/publikationen/15-w-reliable-operation-of-96-um-aperture-broad-area-diode-lasers-emitting-at-980-nm
High-power broad area diode lasers emitting at 980 nm with a maximum output power of 20 W at 15°C and with reliable operation over 2000 h at 15 W and 25°C will be…
High Yield, Highly Scalable, High Voltage GaInP/GaAs HBT Technology
/forschung/publikationen/high-yield-highly-scalable-high-voltage-gainpgaas-hbt-technology
Based on a power high-voltage (HV) HBT technology the successful down scaling towards low-power devices for mixed signal integrated circuits is described. Stress effects and mechanical stability…
Transferred Substrate DHBT of ft = 410 GHz and fmax = 480 GHz for Traveling Wave Amplifiers
/forschung/publikationen/transferred-substrate-dhbt-of-ftnbspnbsp410nbspghz-and-fmaxnbspnbsp480nbspghz-for-traveling-wave-amplifiers
We report a MMIC process in transferred substrate technology. The transistors of 0.8 × 5 µm2 emitter size feature ft = 410 GHz and fmax = 480 GHz at…
Structural and optical properties of nonpolar GaN thin films
/forschung/publikationen/structural-and-optical-properties-of-nonpolar-gan-thin-films
A correlation between the structural and optical properties of GaN thin films grown in the [1120] direction has been established using transmission electron microscopy and cathodoluminescence…
A-plane GaN epitaxial lateral overgrowth structures: Growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy
/forschung/publikationen/a-plane-gan-epitaxial-lateral-overgrowth-structures-growth-domains-morphological-defects-and-impurity-incorporation-directly-imaged-by-cathodoluminescence-microscopy
The distinctly different growth domains of a-plane epitaxial lateral overgrown GaN on stripe masks oriented along [0110] direction were directly visualized by highly spatially and spectrally resolved…