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High-power, high-brightness 100 W QCW diode laser at 940 nm
/forschung/publikationen/high-power-high-brightness-100w-qcw-diode-laser-at-940nm
We demonstrate 940 nm diode lasers with more than 100 W QCW output power having an aperture width 5 to 10 times smaller than commonly used 10 mm bars. We used a super-large vertical…
Fundamental-lateral mode stabilized high-power ridge-waveguide lasers
/forschung/publikationen/fundamental-lateral-mode-stabilized-high-power-ridge-waveguide-lasers
This paper investigates the impact of lateral radiation losses in ridge waveguide (RW) lasers emitting around 1064 nm is investigated. The RWs are fabricated by dry etching of pairs of trenches with…
High power monolithic two mode DFB laser diodes for the generation of terahertz radiation
/forschung/publikationen/high-power-monolithic-two-mode-dfb-laser-diodes-for-the-generation-of-terahertz-radiation
We report on high power DFB lasers emitting simultaneously on two longitudinal modes. The mode spacing is 0.45 nm corresponding to 0.12 THz. We demonstrate THz emission by mixing the two…
200 kHz linewidth of 780 nm high-power distributed feedback diode laser
/forschung/publikationen/200-khz-linewidth-of-780nbspnm-high-power-distributed-feedback-diode-laser
Narrow-linewidth semiconductor lasers emitting in the wavelength range between 760 and 790 nm are attractive for applications such as state selection in rubidium atomic clocks, Doppler laser cooling,…
Optically pumped semiconductor disk laser with graded and step indices for cw and ultrashort pulse generation
/forschung/publikationen/optically-pumped-semiconductor-disk-laser-with-graded-and-step-indices-for-cw-and-ultrashort-pulse-generation
Summary form only given. This paper reports continuous-wave (cw) and passive mode-locked laser operation of diode-pumped semiconductor disk lasers based on gain sections with step and graded index…
High-power hybrid integrated master-oscillator power-amplifier on microoptical bench at 980-nm
/forschung/publikationen/high-power-hybrid-integrated-master-oscillator-power-amplifier-on-microoptical-bench-at-980-nm
Summary form only given. In this paper, a hybrid integrated master-oscillator power-amplifier (MOPA) emitting at 976 nm is presented. It consists of a distributed feedback (DFB) laser as the master…
UV laser drilling of SiC for semiconductor device fabrication
/forschung/publikationen/uv-laser-drilling-of-sic-for-semiconductor-device-fabrication
Pulsed UV laser processing is used to drill micro holes in silicon carbide (SiC) wafers supporting AlGaN/GaN transistor structures. Direct laser ablation using nanosecond pulses has been proven to…
Optimizing the FDFD Method in Order to Minimize PML-Related Numerical Problems
/forschung/publikationen/optimizing-the-fdfd-method-in-order-to-minimize-pml-related-numerical-problems
Using the PML boundary condition in the finitedifference frequency-domain (FDFD) method can significantly affect the numerical condition of the resulting system of equations, causing a drastic…
Analysis of materials modifications caused by UV laser micro drilling of via holes in AlGaN/GaN transistors on SiC
/forschung/publikationen/analysis-of-materials-modifications-caused-by-uv-laser-micro-drilling-of-via-holes-in-algangan-transistors-on-sic
Pulsed UV laser drilling can be applied to fabricate vertical electrical interconnects (vias) for AlGaN/GaN high electron mobility transistor devices on single-crystalline silicon carbide (SiC)…
High power 980 nm tapered lasers with separate contacts: numerical simulation and comparison with experiments
/forschung/publikationen/high-power-980nbspnm-tapered-lasers-with-separate-contacts-numerical-simulation-and-comparison-with-experiments
This work present simulations of the operation of tapered semiconductor lasers with separate contacts, in comparison with the experimental results, with the goal of providing a physical understanding…