Suche
Regeln für die Suche
- Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
- Maximal 200 Zeichen insgesamt
- Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
- UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
- Alle Suchwörter werden zu Kleinschreibung konvertiert
AlGaInP growth parameter optimisation during MOVPE for opto-electronic devices
/forschung/publikationen/algainp-growth-parameter-optimisation-during-movpe-for-opto-electronic-devices
For (AlxGa1-x)1-yInyP growth on GaAs for opto-electronic devices in metal-organic vapour phase epitaxy an accurate control of the aluminium content x and of the indium content y is crucial.…
Comprehensive study of (Al)GaAs Si-doping using reflectance anisotropy spectroscopy in metal-organic vapour-phase epitaxy
/forschung/publikationen/comprehensive-study-of-algaas-si-doping-using-reflectance-anisotropy-spectroscopy-in-metal-organic-vapour-phase-epitaxy
The n-type doping of (Al)GaAs grown on GaAs using silicon (Si) was studied in metal-organic vapour-phase epitaxy using reflectance anisotropy spectroscopy. The reflectance anisotropy (RA) of GaAs was…
Segregation and desorption of antimony in InP (0 0 1) in MOVPE
/forschung/publikationen/segregation-and-desorption-of-antimony-in-inp-0-0-1-in-movpe
We investigated the segregation of Sb on InP in metalorganic vapour phase epitaxy (MOVPE). A clean PH3 stabilized InP(0 0 1) surface is exposed to trimethyl antimony (TMSb) and then…
Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diode
/forschung/publikationen/influence-of-the-barrier-composition-on-the-light-output-of-ingan-multiple-quantum-well-ultraviolet-light-emitting-diode
MOVPE grown InGaN multiple-quantum-well (MQW) light emitting diodes (LEDs) on c-plane (0001) sapphire emitting at 375 nm with GaN, Al0.16Ga0.84N and InxAl0.16GaN-barrier layers were investigated…
Improved Design Methodology for a 2 GHz Class-E Hybrid Power Amplifier Using Packaged GaN-HEMTs
/forschung/publikationen/improved-design-methodology-for-a-2-ghz-class-e-hybrid-power-amplifier-using-packaged-gan-hemts
This paper reports on design methodology and realization of a class-E power amplifier (PA) for 2 GHz using a packaged GaN-HEMT. The circuit achieves 36 dBm output power and 57 % PAE,…
Feeding Structures for Packaged Multifinger Power Transistors
/forschung/publikationen/feeding-structures-for-packaged-multifinger-power-transistors
Power transistors consist of a large number of cells, which are fed by a long row of parallel bonding wires. All cells are to be operated synchronously in order to avoid output power degradation.…
Comparative Study of Shot-Noise Models for HBTs
/forschung/publikationen/comparative-study-of-shot-noise-models-for-hbts
Although the shot-noise sources in bipolar transistors are strongly correlated, it is highly desirable for several reasons to rely on an approximative model that requires only noncorrelated sources.…
A Broadband GaN-MMIC Power Amplifier for L to X Bands
/forschung/publikationen/a-broadband-gan-mmic-power-amplifier-for-l-to-x-bands
A broadband GaN monolithic power amplifier covering the L to X bands is presented as is required for various applications in measurement set-ups and multi-band systems. It is based on 8 transistor…
Current Gain Collapse in HBTs Analysed by Transient Interferometric Mapping Method
/forschung/publikationen/current-gain-collapse-in-hbts-analysed-by-transient-interferometric-mapping-method
Thermal distribution during a current gain collapse event is investigated in multi-finger InGaP/GaAs HBTs using the transient interferometric mapping method. The onset of the collapse is observed at…
On the Ignition Voltage Behavior of Microwave Microplasmas
/forschung/publikationen/on-the-ignition-voltage-behavior-of-microwave-microplasmas
Small-sized plasmas excited at microwave frequencies offer interesting applications from industrial processing to medicine. This paper presents first data on the ignition voltages of such microwave…