Monolithic high brightness diode lasers results and developments at FBH
G. Erbert, F. Bugge, J. Fricke, K. Paschke, H. Wenzel, and G. Tränkle
Published in:
Proc. SPIE, vol. 6738, no. 673809 (2007).
Abstract:
Brightness is one of the most important criteria for diode laser applications beside reliability and efficiency. In this paper results were given for different approaches of high power nearly fundamental mode diode lasers. It will be shown that the technological implementation of spatial and spectral mode selection can lead to output powers up to 10 W from in narrow line passively cooled monolithic device at 980 nm.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Keywords:
Diode laser, beam quality, GaAs, semiconductor technology, Bragg grating, resonator
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