Degradation Analysis of 808 nm GaAsP Laser Diodes
K. Häusler, B. Sumpf, G. Erbert, G. Tränkle
Published in:
Conf. on Lasers and Electro-Optics - Pacific Rim (CLEO/Pacific Rim 2007), Seoul, South Korea, Aug. 26-31, pp. 1-2 (2007).
Abstract:
Degradation data from accelerated life test of 808 nm strained GaAsP quantum well lasers are analyzed. The Eyring model and the statistical model of non-linear mixed effects are applied to estimate degradation parameters. The life time at operating condition is predicted at given confidence level.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
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