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GaN HEMT Potential for Low-Noise Highly Linear RF Applications
/forschung/publikationen/gan-hemt-potential-for-low-noise-highly-linear-rf-applications
This paper presents a study of the capability of gallium- nitride (GaN) high-electron mobility transistors (HEMTs) to achieve low noise and high linearity performance. A packaged GaN HEMT was…
Plasma ignition in a quarter-wavelength microwave slot resonator
/forschung/publikationen/plasma-ignition-in-a-quarter-wavelength-microwave-slot-resonator
A new microwave plasma source concept, particularly for use in the atmospheric pressure region, is presented where impedance matching is realized by a quarter-wavelength waveguide resonator…
High-Power Monolithic Two-Mode DFB Laser Diodes for the Generation of THz Radiation
/forschung/publikationen/high-power-monolithic-two-mode-dfb-laser-diodes-for-the-generation-of-thz-radiation
We have devolved 1064 nm high-power monolithic distributed feedback lasers which operate simultaneously on two longitudinal modes. These modes correspond to the fundamental and first-order…
New Two-Color Laser Concepts for THz Generation
/forschung/publikationen/new-two-color-laser-concepts-for-thz-generation
Two-color semiconductor external cavity laser concepts for terahertz (THz) generation are discussed. By defining three critical characteristics, various two-color laser configurations are…
290-fs pulses from a semiconductor disk laser
/forschung/publikationen/290-fs-pulses-from-a-semiconductor-disk-laser
Transform-limited pulses as short as 290 fs at 1036 nm are generated by a diode-pumped semiconductor disk laser. The allsemiconductor laser employs a graded-gap-barrier design in the gain…
Quantitative analysis of in situ wafer bowing measurements for III-nitride growth on sapphire
/forschung/publikationen/quantitative-analysis-of-in-situ-wafer-bowing-measurements-for-iii-nitride-growth-on-sapphire
Wafer bowing measurements have been recently developed into an efficient tool for MOVPE and MBE process optimization. In combination with temperature and reflectance measurements they are applied for…
High-temperature growth of AlN in a production scale 11x2 MOVPE reactor
/forschung/publikationen/high-temperature-growth-of-aln-in-a-production-scale-11x2-movpe-reactor
We report on the growth of high quality AlN films on sapphire by MOVPE in an AIX2400G3-HT planetary reactor. Specific reactor hardware modifications were conducted to facilitate growth temperatures…
Semipolar GaN grown on m-plane sapphire using MOVPE
/forschung/publikationen/semipolar-gan-grown-on-m-plane-sapphire-using-movpe
We have investigated the MOVPE growth of semipolar gallium nitride (GaN) films on (1010) m-plane sapphire substrates. Specular GaN films with a RMS roughness (10x10 µm2) of 15.2 nm…
Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes
/forschung/publikationen/effect-of-the-barrier-composition-on-the-polarization-fields-in-near-uv-ingan-light-emitting-diodes
The electroluminescence from near ultraviolet (UV) light emitting diodes containing InGaN multiple quantum wells (MQWs) with GaN, AlGaN, and InAlGaN barriers was investigated. Based on band-structure…
Peak power from 60-µm Broad Area Single Emitter Limited to 50-W by Carrier Escape
/forschung/publikationen/peak-power-from-60-um-broad-area-single-emitter-limited-to-50-w-by-carrier-escape
Passivated 1100-nm broad area lasers reach maximum power of 50-W from a 60-µm stripe under short pulse conditions. Simulations predict and spontaneous emission measurements confirm power is…