T. Krämer, F. Lenk, A. Maaßdorf, J. Würfl, G. Tränkle

Published in:

Int. Conf. on Indium Phosphide and Related Materials (IPRM 2007), Matsue, Japan, May 14-18, pp. 407-408 (2007).

Abstract:

A transferred substrate InP DHBT of 0.8 µm emitter width was developed. The transistors featured high yield and homogeneous device characteristics over the three inch wafer, with an average of f_t = 300 GHz ± 3%_SD, f_max = 250 GHz ±5%_SD at a breakdown voltage of BV_ceo= 6 V.

© Copyright 2007 IEEE - All Rights Reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Full version in pdf-format.