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High-power 894 nm monolithic distributed-feedback lase
/forschung/publikationen/high-power-894nbspnm-monolithic-distributed-feedback-laser
A ridge-waveguide InGaAs/GaAsP laser, emitting up to 250 mW in a single lateral and longitudinal mode at a wavelength of 894 nm, is presented. The distributed feedback is provided by a…
High power pulse generation from a 10mm long monolithic multi section mode locked semiconductor laser at 920nm
/forschung/publikationen/high-power-pulse-generation-from-a-10mm-long-monolithic-multi-section-mode-locked-semiconductor-laser-at-920nm
Active and passive mode locking of a four section 10mm long monolithic 920nm DBR laser was investigated. 10ps pulses are generated at a repetition rate of 4GHz with a peak power of 1.3W.
A 30-GHz Waveguide-to-Microstrip-Transition
/forschung/publikationen/a-30-ghz-waveguide-to-microstrip-transition
Waveguide-to-microstrip transitions are essential elements for mm-wave transmitters and receivers. This paper presents an optimized transition with a relatively simple geometry and a minimum of…
High-power 980-nm monolithically integrated master-oscillator power-amplifier
/forschung/publikationen/high-power-980-nm-monolithically-integrated-master-oscillator-power-amplifier
Diode lasers emitting single-frequency, diffraction limited beams at a continuous-wave (CW) optical power of several Watts are required for many applications including frequency conversion,…
5.5 W output power from 100 µm stripe width lasers at 670 nm with a vertical far-field angle of 32 degrees
/forschung/publikationen/55nbspw-output-power-from-100nbspum-stripe-width-lasers-at-670nbspnm-with-a-vertical-far-field-angle-of-32nbspdegrees
670 nm broad area diode lasers with an output power of 5.5 W and a conversion efficiency of 40% will be presented. Reliable operation over 1800 h at more than 1 W will be…
450 nm blue laser emission of an intracavity-doubled Nd:ASL crystal pumped by an extended-cavity tapered laser diode
/forschung/publikationen/450nbspnm-blue-laser-emission-of-an-intracavity-doubled-ndasl-crystal-pumped-by-an-extended-cavity-tapered-laser-diode
For the pumping of one Nd:ASL crystal, we have developed a high-brightness external-cavity tapered laser diode stabilized at 798 nm, by use of a volume Bragg grating (VBG) in a simple and compact…
Structural and optical properties of ELOG a-plane GaN grown with MOVPE over different stripe directions on r-plane sapphire
/forschung/publikationen/structural-and-optical-properties-of-elog-a-plane-gan-grown-with-movpe-over-different-stripe-directions-on-r-plane-sapphire
Structural and optical properties of ELOG a-plane GaN grown with MOVPE over different stripe directions on r-plane sapphire C. Netzel, T. Wernicke, U. Zeimer, and M. Weyers …
On Compact HBT RF Noise Modeling
/forschung/publikationen/on-compact-hbt-rf-noise-modeling
Accurate RF noise modeling of heterojunction bipolar transistors requires a proper model for the correlation of the shot-noise sources based on the respective time constant. This is incompatible with…
A 2.4 GHz GaAs-HBT Class-E MMIC Amplifier with 65% PAE
/forschung/publikationen/a-24nbspghz-gaas-hbt-class-e-mmic-amplifier-with-65-pae
A class-E amplifier in the 2 GHz band is presented. It is realized as a coplanar MMIC using a high-voltage GaAs-HBT process. At 37 dBm output power, a high PAE of 65% with 71% collector…
808 nm tapered diode lasers optimised for high output power and nearly diffraction-limited beam quality in pulse mode operation
/forschung/publikationen/808nbspnm-tapered-diode-lasers-optimised-for-high-output-power-and-nearly-diffraction-limited-beam-quality-in-pulse-mode-operation
808 nm tapered lasers have been investigated under current pulsing conditions without thermal load. The pulse length was 100 ns. The lasers are based on a super-large optical cavity…