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Surface recombination and facet heating in high-power diode lasers
/forschung/publikationen/surface-recombination-and-facet-heating-in-high-power-diode-lasers
Surface recombination velocities and surface temperatures at front facets of standard broad-area lasers emitting at 808 nm were investigated by time-resolved two-color photoluminescence and…
Wavelength stabilization of extended-cavity tapered lasers with volume Bragg gratings
/forschung/publikationen/wavelength-stabilization-of-extended-cavity-tapered-lasers-with-volume-bragg-gratings
The wavelength stabilization of high-brightness extended-cavity lasers at 810-nm by the use of volume Bragg gratings is described. Narrow linewidth (<20 pm), high power (2.5 W) and good…
Analysis of material modifications caused by nanosecond pulsed UV laser processing of SiC and GaN
/forschung/publikationen/analysis-of-material-modifications-caused-by-nanosecond-pulsed-uv-laser-processing-of-sic-and-gan
The effects of direct UV laser processing on single crystal SiC in ambient air were investigated by crosssectional transmission electron microscopy, Auger electron spectroscopy, and measurements of…
2 MeV ion irradiation effects on AlGaN/GaN HFET devices
/forschung/publikationen/2-mev-ion-irradiation-effects-on-algangan-hfet-devices
AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with 2 MeV protons, carbon, oxygen, iron and krypton ions with fluences ranging from 1 x 109 cm-2 to…
High peak power femtosecond pulses from modelocked semiconductor laser in external cavity
/forschung/publikationen/high-peak-power-femtosecond-pulses-from-modelocked-semiconductor-laser-in-external-cavity
The generation of high peak power femtosecond pulses from an all semiconductor laser system is demonstrated. The system is based on a passively modelocked two-section laser diode in an external…
Limitations of Current Compact Transit-Time Models for III-V-Based HBT
/forschung/publikationen/limitations-of-current-compact-transit-time-models-for-iii-v-based-hbt
This paper investigates the accuracy limitations of common compact bipolar transistor models towards higher frequencies. The device under test is a InGaP/GaAs HBT, simulated by the FBH HBT model. The…
Switch-Mode Amplifier ICs with over 90% Efficiency for Class-S PAs using GaAs-HBTs and GaN-HEMTs
/forschung/publikationen/switch-mode-amplifier-ics-with-over-90-efficiency-for-class-s-pas-using-gaas-hbts-and-gan-hemts
This paper reports on design and realization of monolithic switch-mode amplifiers for data rates up to 1.8 Gbps, suitable for Class-S and inverse class-D PA modules. GaN HEMT as well as high-voltage…
Bandwidth Potential of HBT-Based TWAs as a Function of Transistor fmax/fT Ratio
/forschung/publikationen/bandwidth-potential-of-hbt-based-twas-as-a-function-of-transistor-fmaxft-ratio
The bandwidth potential of cascode HBT-based broadband amplifiers following the traveling-wave amplifier (TWA) concept is studied. An approximate expression for the gain of the circuit is derived,…
Near band edge and defect emissions from epitaxial lateral overgrown α-plane GaN with different stripe orientations
/forschung/publikationen/near-band-edge-and-defect-emissions-from-epitaxial-lateral-overgrown-a-plane-gan-with-different-stripe-orientations
Epitaxial lateral overgrowth (ELOG) of α-plane GaN on r-plane sapphire with stripe orientations parallel to [0 0 0 1], [0 1 1 1], and [0 1 1 0] has…
Compact Large-Signal Shot-Noise Model for HBTs
/forschung/publikationen/compact-large-signal-shot-noise-model-for-hbts
A new description of the shot noise in HBTs is proposed that accounts for the correlation of the sources. It can easily be included in large-signal models, thus significantly improving the RF noise…